The invention relates to a multi-layer aluminum
nitride substrate for highly integrated module level packaging, and a manufacturing method thereof. The structure of the substrate comprises upper and lower surface
layers, wherein the upper and lower surface
layers are high-precision and high-density metalized
welding pads; the side walls of the substrate are fully metalized; and the substrate is internally provided with multi-layer metalized wiring. The upper and lower
surface layer metalized
welding pads are welded with ball gates of a
silicon-based
chip; the side walls are fully metalized torealize
signal shielding; the multi-layer metalized wiring inside the substrate satisfies complicated circuit
signal transmission and
interconnection. By utilizing a multi-layer co-firing process, aluminum
nitride ceramic is selected as the
ceramic base body material,
tungsten is used as the metallization material, a
green tape binding micro-deformation process adopted, and a
tungsten metal circuit layer on the
surface layer is plated by adopting chemical
nickel-plating and chemical
gilding processes. The multi-layer aluminum
nitride substrate and the manufacturing method thereof have the advantages that the
aluminium nitride substrate and the
silicon-based
chip are highly matched in coefficients of
thermal expansion, and the reliability of ball gate
welding packaging of the
silicon-basedchip is realized; and the
thermal conductivity of the substrate is increased to 170 W / mK, thereby being capable of meeting the
high power density packaging and heat dissipation requirements of the highly integrated module.