Multi-layer aluminum nitride substrate for highly integrated module level packaging, and manufacturing method thereof

Abstract

The invention relates to a multi-layer aluminum nitride substrate for highly integrated module level packaging, and a manufacturing method thereof. The structure of the substrate comprises upper and lower surface layers, wherein the upper and lower surface layers are high-precision and high-density metalized welding pads; the side walls of the substrate are fully metalized; and the substrate is internally provided with multi-layer metalized wiring. The upper and lower surface layer metalized welding pads are welded with ball gates of a silicon-based chip; the side walls are fully metalized torealize signal shielding; the multi-layer metalized wiring inside the substrate satisfies complicated circuit signal transmission and interconnection. By utilizing a multi-layer co-firing process, aluminum nitride ceramic is selected as the ceramic base body material, tungsten is used as the metallization material, a green tape binding micro-deformation process adopted, and a tungsten metal circuit layer on the surface layer is plated by adopting chemical nickel-plating and chemical gilding processes. The multi-layer aluminum nitride substrate and the manufacturing method thereof have the advantages that the aluminium nitride substrate and the silicon-based chip are highly matched in coefficients of thermal expansion, and the reliability of ball gate welding packaging of the silicon-basedchip is realized; and the thermal conductivity of the substrate is increased to 170 W / mK, thereby being capable of meeting the high power density packaging and heat dissipation requirements of the highly integrated module.

Description

technical field [0001] The invention relates to a multilayer aluminum nitride substrate for highly integrated module-level packaging and a manufacturing method thereof, belonging to the technical field of electronic packaging. Background technique [0002] With the continuous miniaturization and high integration of electronic devices, the number of chips and output power per unit volume of the device continue to increase, which puts forward higher performance requirements for ceramic substrates for packaging. Especially module-level packaging, a large number of chips in the module, high unit power density, requires the substrate to provide good heat dissipation requirements and a good thermal expansion coefficient matching with the chip, to avoid reliability problems when the chip is working. [0003] For polymer substrates, due to their low cost and easy molding, they are most widely used in the field of packaging and interconnection. However, its thermal conductivity is l...

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Problems solved by technology

[0006] The present invention proposes a multi-layer aluminum nitride substrate for highly integrated module-level packaging and its manufacturing method. The purpose of the present invention is to solve the existing electronic packaging substrates with insufficient thermal conductivity, insufficient volume or large difference in thermal expansion coefficient matching. and other defects, a multi-layer aluminum nitride substrate for highly integrated module-level packaging with good heat dissipation, small volume, and matching thermal expansion coefficient with silicon-based chip materials and its manufacturing method are proposed

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