47results about How to "Maintain electrical properties" patented technology

The invention provides electronic parts which comprise a composite dielectric layer composed of an organic insulating material and a dielectric ceramic powder having a larger relative dielectric constant than the organic insulating material, and which also comprise conductive element sections forming inductor elements, etc., wherein the organic insulating material comprises a cured resin obtained by curing reaction of an epoxy resin with an active ester compound obtained by reaction between a compound with two or more carboxyl groups and a compound with a phenolic hydroxyl group. The dielectric ceramic powders of the described electronic parts have larger relative dielectric constants than the organic insulating materials, and the organic insulating materials have low dielectric loss tangents. It is possible to adequately reduce time-dependent dielectric constant changes in the high-frequency range of 100 MHz and above even with prolonged use at high temperatures of 100° C. and higher, while it is also possible to satisfactorily prevent deformation and other damage to the electronic parts during their handling.

A piezoelectric element is provided with a piezoelectric composition pressure sensitive body, a first electrode, a second electrode and a coat layer. The piezoelectric composition pressure sensitive body includes a piezoelectric ceramic powder and a flexible organic polymer. The first electrode and the second electrode are connected with the piezoelectric composition pressure sensitive body and are insulated from one another. The coat layer is provided on the outer side of the piezoelectric ceramic powder and suppresses absorption of water into the piezoelectric ceramic powder.

The invention relates to a preparation method for a silicon surface anti-reflection nanometer array structure, which comprises the following steps that: silicon chips are placed into an inductively coupled plasma (ICP) system, and nanometer conical array structures are obtained at the silicon surface under the conditions of the basic vacuum being 1.0*10<-6> Torr, the temperature being -100 DEG C to -140 DEG C, the gas flow rate ratio (SF6 / O2) being 36 / 22 to 44 / 14, the air pressure being 6 to 25mTorr, the reactive ion etching (RIE) power being 3 to 6W and the ICP power being 800 to 1000W. The method adopts a low-temperature etching technology, the masking process is not needed, the large-area silicon surface nanometer conical array structure with the super anti-reflection characteristic is directly prepared through etching, and in addition, the regulation and control on the nanometer conical structure feature is realized through regulating and controlling the corresponding parameters.

The invention relates to a polymer carbon nano tube compound structure and a preparation method thereof and the structure is similar to shish-kebab crystal formed under polymer shear field. The preparation method includes the following steps: adding carbon nano tube to an organic solution by 0.01 to 0.1wt mass percent and forming a carbon nano tube suspension through ultrasonic dispersion; adding polymer to the organic solution by 0.01 to 10wt mass percent and heating to dissolve the polymer to obtain a polymer solution; dripping the carbon nano tube suspension to the polymer solution to form a mixed solution and maintaining constant temperature for 10 minutes; slowly cooling the mixed solution to room temperature and filtering to obtain the polymer carbon nano tube compound structure. The invention can increase the dispersibility of the carbon nano tube in polymer matrix and solution, therefore, the carbon nano tube is easy to be further processed. The invention can be also applied in modification of other nano tubes and nano lines, such as Ti2 nano pipe and PET fiber, etc.

A method for making gate structure contains providing a silicon substrate, forming conductive layer on silicon substrate, forming metal layer on conductive layer, forming the per-patterned first protective layer on metal layer wherein every gate pattern has exposed top and side surface, removing part of side surface to form first gate assembly, transferring the pattern of first gate assembly to metal layer to form the second gate assembly, on the substrate, the exposed of first and second gate assembly forming the second protective layer, transferring the first gate assembly and pattern of second gate assembly to conductive layer to form third gate assembly. Said invention ca avoid the improper short circuit between bit line metal layer and gate metal layer without generating cavity in insulation layer between gates.

In order to prevent the corrosion of metal wirings of a wiring pattern made of a metal material having a low electric resistance. A wiring substrate is formed of a plurality of metal wirings 14e formed on a substrate 7c. A guard wiring 29 fabricated of an electrically conductive oxide such as ITO is interposed between at least a pair of adjacent ones of a plurality of metal wirings 14e. When voltages V1, V2, V3, and V4 applied to the metal wirings 14e are related to be V1>V2 >V3 >V4, a guard wiring 29 is present between a metal wiring 14e functioning as an anode and a metal wiring 14e functioning as a cathode, and the anode metal wiring 14e is prevented from being corroded.

The invention belongs to the technical field of preparation of a flame retardant, and particularly relates to a preparation method of modified aluminium hypophosphite. The preparation method comprises the following steps: dissolving sodium hypophosphite into water to prepare sodium hypophosphite solution, adding phosphate, and stirring at high speed and dissolving; dissolving aluminum chloride and polyethylene glycol into water to prepare aluminum chloride solution; stirring at 10-30 DEG C, normal pressure and high speed, adding the aluminum chloride solution into the sodium hypophosphite solution, slowly stirring and reacting to obtain turbid solution containing aluminum hypophosphite; pumping the turbid solution into a centrifugal machine for centrifuging, washing with water, and drying to obtain the modified aluminium hypophosphite. The prepared modified aluminium hypophosphite can be excellently dispersed into a high-molecular material, the mechanical performance and flame-retardant property of the high-molecular material can be obviously improved, and the electrical property of resin can be maintained; the preparation is simple in technology, temperature rise and regulation of pH value of the reaction solution are not needed, the yield can achieve up to 98.0%, and the modified aluminium hypophosphite is pollution-free and environmental friendly.

In a substrate of a liquid crystal display device which forms a bus line which three-dimensionally intersects scanning signal lines, video signal lines and an insulation layer thereon, the present invention facilitates repairs of short-circuiting between the respective signal lines and the bus line. A liquid crystal display device includes a liquid crystal panel which is constituted of a pair of substrates with liquid crystal sandwiched therebetween. Out of the pair of substrates, one substrate includes a bus line which is arranged outside a display region and is electrically connected to a first conductive layer arranged inside the display region, and a plurality of signal lines which three-dimensionally intersect the bus line by way of an insulation layer. The bus line includes opening portions outside intersecting regions where the bus line is overlapped to the signal lines as viewed in a plan view. The opening portions are arranged on both sides of each intersecting region.

A display panel includes a first substrate, and the first substrate includes a base plate; a first conductive line disposed on the base plate and extending along the first direction; a second conductive line and a third conductive line disposed on the base plate and extending along the second direction; a contact pad positioned between the second and third conductive lines; a semi-conductive layer connecting the contact pad and the second conductive line, and the semi-conductive layer having a thickness d; and a pixel electrode connecting the contact pad. The semi-conductive layer has a channel width W (μm) and a channel length L (μm) between the contact pad and the second conductive line, and a pixel distance Px (μm) between the second and third conductive lines along the first direction, wherein the channel width W is conformed to the following equation:(3.035-1.5)≤W-0.008×(Px×Ld)≤(3.035+1.5).

A semiconductor device comprises a plurality of stacking blocks and a plurality of conductive lines. Each stacking blocks comprises two opposite finger VG structures. Each finger VG structure includes a staircase structure and a plurality of bit line stacks. The staircase structure is perpendicular to the bit line stacks, and the bit line stacks of the two opposite finger VG structures are arranged alternately. The conductive lines is disposed over the stacking blocks at interval. The direction of the conductive lines is parallel to a direction of the bit line stacks. The conductive lines include a plurality of bit lines and a plurality of ground lines, and each stacking block includes at least one ground line.

The invention belongs to the field of flame-retardant materials, and particularly relates to modified zinc borate prepared by taking dimethyl polysiloxane and a silane coupling agent as modifying agents and boric acid and zinc oxide as raw materials. According to the invention, a very good synergic effect can be achieved by simultaneously using the dimethyl polysiloxane and the silane coupling agent as the modifying agents, and the modified zinc borate and a high-molecular compound are more closely combined together, so that various mechanical properties of a material are further enhanced. The modified zinc borate disclosed by the invention is reduced in surface potential and improved in lipophilicity, enhanced in the dispersive capacity in a high-molecular material through surface modification; and the product is enhanced in fineness, high in dispersity and compatibility after the surface is subjected to modification treatment. The invention also provides a preparation method of the modified zinc borate. The preparation method disclosed by the invention is simple in process, achieves the productivity as high as more than 98.0%, easily obtains the raw material and is pollution-free and environment-friendly.