The invention discloses a method for realizing high-performance copper interconnection by using an upper mask, comprising a semiconductor substrate with a metal interconnection layer, wherein a composite structure is formed on the metal interconnection layer of the semiconductor substrate from bottom to top The etching stop layer, the dielectric layer, the overlying layer, the etching adjustment layer and the mask layer are in sequence, and the etching adjustment layer is a thin film of low dielectric constant material. The beneficial effects of the present invention are: through the technological process and method of the present invention, the added low dielectric constant material is used to etch the depth adjustment layer, and the depth of the copper interconnection groove is selectively changed, so that the qualified specific The square resistance of the copper interconnection wires in the area is reduced, thereby achieving the purpose of selectively reducing the interconnection resistance of the chip. Through the application of the present invention, the interconnection resistance can be reduced to the greatest extent without changing the overall copper interconnection depth, without increasing the difficulty of the process, and without narrowing the process window, thereby reducing the signal delay of the chip, reducing loss, and improving the overall performance of the chip. performance.