96results about How to "Increase the turn-on voltage" patented technology

Provided are an organic light emitting compound represented by Formula 1 below, an organic light emitting device comprising the same, and a method of manufacturing the light emitting device:

wherein CY1, CY2, Ar₁, R₁ and R₂ are described in the detailed description of the invention. An organic light emitting device comprising the organic light emitting compound has low turn-on voltage, high efficiency, high color purity and high luminance.

A semiconductor device in which both an IGBT element region and a diode element region exist in the same semiconductor substrate includes a low lifetime region, which is formed in at least a part of a drift layer within the diode element region and shortens the lifetime of holes. A mean value of the lifetime of holes in the drift layer that includes the low lifetime region is shorter within the IGBT element region than within the diode element region.

A semiconductor device includes: a compound semiconductor substrate; an n-channel field-effect transistor region formed on the compound semiconductor substrate, and that includes a first channel layer; an n-type first barrier layer that forms a heterojunction with the first channel layer, and supplies an n-type charge to the first channel layer; and a p-type gate region that has a pn junction-type potential barrier against the n-type first barrier layer; and a p-channel field-effect transistor region formed on the compound semiconductor substrate, and that includes a p-type second channel layer, and an n-type gate region that has a pn junction-type potential barrier against the p-type second channel layer.

A semiconductor element 100 including an MISFET according to the present invention is characterized by having diode characteristics in a reverse direction through an epitaxial channel layer 50. The semiconductor element 100 includes a semiconductor layer 20 of a first conductivity type, a body region 30 of a second conductivity type, source and drain regions 40 and 75 of the first conductivity type, an epitaxial channel layer 50 in contact with the body region, source and drain electrodes 45 and 70, a gate insulating film 60, and a gate electrode 65. If the voltage applied to the gate electrode of the MISFET is smaller than a threshold voltage, the semiconductor element 100 functions as a diode in which current flows from the source electrode 45 to the drain electrode 70 through the epitaxial channel layer 50. The absolute value of the turn-on voltage of this diode is smaller than that of the turn-on voltage of a body diode that is formed of the body region and the first silicon carbide semiconductor layer.

Provided are a cell string and a reading method for the cell string. The cell string includes a semiconductor body formed on a surface of an insulating layer, first and second semiconductor regions formed at respective ends of the semiconductor body and are formed by being doped with different types of impurities, two or more control electrodes which are separated from each other to be electrically isolated, and a gate insulating film stack which is formed between the semiconductor body and the control electrodes, wherein the semiconductor body is configured to include at least two layers, and adjacent layers of the semiconductor body have different energy band gaps, wherein the semiconductor body is formed by an intrinsic semiconductor or a semiconductor being doped with impurities, and wherein the first and second semiconductor regions are doped with impurities of which concentration is higher than that of the semiconductor body.

The invention discloses a growth method for a light-emitting diode epitaxial wafer, and belongs to the technical field of semiconductors. The method comprises the step: sequentially growing a low-temperature buffering layer, a high-temperature buffering layer, an N-type layer, an active layer, an electronic blocking layer and a P-type layer on a substrate. The active layer comprises a first sub-layer and a second sub-layer, and the growth atmospheres of a quantum well layer in the first sub-layer, a quantum barrier layer in the first sub-layer, a quantum well layer in the second sub-layer and a quantum barrier layer in the second sub-layer are sequentially N2 and H2 mixed gas, pure H2, pure N2, and N2 and H2 mixed gas. The quantum well layer in the first sub-layer employs a variable pressure and variable temperature growth mode, and the quantum barrier layer in the first sub-layer employs a high-pressure and high-temperature growth mode. The quantum well layer in the second sub-layer employs a low-pressure and low-temperature growth mode, and the quantum barrier layer in the second sub-layer employs a variable pressure growth mode. The quantum barrier layer in the first sub-layer employs trimethyl gallium as a gallium source. The method improves the light-emitting efficiency.

A gate structure, a manufacturing method of the gate structure, and an enhanced semiconductor device relate to the semiconductor technology field. The gate structure includes a channel layer, a barrier layer arranged on the channel layer, a cap layer arranged on the barrier layer, and a gate electrode layer arranged on the cap layer. The cap layer has a crystal polarization orientation which is opposite to the barrier layer. A cap layer material with an opposite polarity orientation of the barrier layer is used so that an interface between the barrier layer and the cap layer has extremely strong negatively polarized charges and a conduction band energy level is bent upwardly. The conduction band energy level of the barrier layer and the channel layer is raised above a Fermi level, a two-dimensional electron gas/two-dimensional cavity gas at the interface between the barrier layer and the channel layer can be effectively exhausted so as to increase a turn-on voltage. Simultaneously, different chemical properties of different crystal polarization orientations are used to realize self-termination wet etching of a gate pattern so as to increase uniformity and repeatability of device manufacturing.

The invention discloses a gallium nitride power field effect transistor which comprises a substrate, a buffering layer, a GaN channel layer arranged on the buffering layer in an epitaxial mode, an AlGaN layer extended on the GaN, a source electrode, a drain electrode, a grid electrode, a polycrystalline silicon layer and an insulating layer, wherein the polycrystalline silicon layer and the insulating layer are arranged between the grid electrode and the AlGaN. When the voltage of the grid electrode is negative, electrons of a grid electrode metal layer are tunneled to the polycrystalline silicon layer, the threshold voltage of the GaN field effect transistor is increased, therefore, the switching performance of the GaN field effect transistor is improved, and the power consumption of the transistor is reduced.