Enhancement-Mode High-Electron-Mobility Transistor Structure

Abstract

An enhancement-mode high-electron-mobility transistor structure comprises a channel layer, a barrier layer, an interface layer, a gate electrode, a source electrode and a drain electrode. The channel layer is a first III-V semiconductor and is arranged on a substrate. The barrier layer is a second III-V semiconductor and is arranged on the channel layer. The barrier layer comprises a first doped region, an adjusting doped region and a second doped region. The first doped region and the second doped region are n-type second III-V semiconductor, and the adjusting doped region comprises a p-type second III-V semiconductor. The first doped region and the second doped region are arranged at two sides of the adjusting doped region. The interface layer is arranged above the adjusting doped region and is a p-type third III-V semiconductor, and furthermore the doping amount is higher than that of the adjusting doped region. Furthermore the doping concentration of an area which is adjacent to the interface area in the adjusting doped region is higher than that of the area that is adjacent to the channel layer.

Description

technical field [0001] The invention relates to a semiconductor structure, in particular to an enhanced high electron mobility transistor structure. Background technique [0002] A high-electron-mobility transistor (High-Electron-Mobility Transistor, HEMT) is an improvement on a metal-oxide-semiconductor field-effect transistor (MOSFET). The main feature is the use of two semiconductor materials with different energy gaps. It is common to join two III-V semiconductors in an epitaxial manner, such as gallium arsenide (GaAs), gallium nitride (GaN), arsenide Aluminum Gallium (Al x Ga 1-x As), aluminum gallium nitride (Al x Ga 1-x N), indium gallium nitride, etc. (In x Ga 1-x N), forming a carrier channel between the interfaces. [0003] The movement of carriers is limited to two dimensions by the quantum well, so it is also called two-dimensional electron gas (Two-Dimension Electron Gas, 2DEG). Due to the reduction of one-dimensional scattering, the mobility of electron...

AI Technical Summary

Problems solved by technology

[0005] The current E-mode HEMT has a problem with such a gate stack structure that the gate leakage current is quite large, which may cause the temperature to rise extremely fast during operation, which affects safe operation and limits the performance of the transistor.

In addition, due to the connection between the p-type semiconductor and the channel layer, the crystal structure of different component semiconductors is different, resulting in poor interface properties, dislocation, many defects, and large roughness

This will make it easy to cause interface damage from defects or misalignments after long-term use, thus limiting the electrical properties and service life of E-mode HEMTs

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