116results about How to "High pattern accuracy" patented technology

An exposure apparatus exposes a substrate P by locally filling a side of an image plane of a projection optical system PL with a liquid 50 and projecting an image of a pattern onto the substrate P through the liquid 50 and the projection optical system PL. The exposure apparatus includes a recovery unit 20 which recovers the liquid 50 outflowed to the outside of the substrate P. When the exposure process is performed in accordance with the liquid immersion method, the pattern can be transferred accurately while suppressing any environmental change even when the liquid outflows to the outside of the substrate.

According to one embodiment of the invention, a pattern of a mask is transferred onto a substrate via a projection optical system using an energy beam by placing a substrate on side of an energy beam emitting end portion of projection optical system, when the substrate is exposed, and placing an object on the side of the energy beam emitting end portion of the projection optical system in place of the substrate when the substrate is exchanged. This can adequately remove a light absorptive substance from the region near an output end of the projection optical system and can maintain the gas state even at a time of moving or replacing the substrate.

A vapor deposition mask with high pattern accuracy particularly at vapor deposition openings is realized without changing the substrate structure. The vapor deposition mask includes a plate member, a first concave pattern provided at a first surface of the plate member, a second concave pattern provided at a second surface of the plate member on the opposite side of the plate member, and a through hole pattern provided at meeting or intersecting portions of the first concave pattern and the second concave pattern. The shape of the through hole pattern is arranged to be different from both that of the first concave pattern and that of the second concave pattern.

An exposure apparatus exposes a substrate P by locally filling a side of an image plane of a projection optical system PL with a liquid 50 and projecting an image of a pattern onto the substrate P through the liquid 50 and the projection optical system PL. The exposure apparatus includes a recovery unit 20 which recovers the liquid 50 outflowed to the outside of the substrate P. When the exposure process is performed in accordance with the liquid immersion method, the pattern can be transferred accurately while suppressing any environmental change even when the liquid outflows to the outside of the substrate.

An exposure apparatus, wherein exposure is carried out while filling a space between a projection optical system and a substrate with a liquid, enables to suppress deterioration of a pattern image caused by any bubble in the liquid. The exposure apparatus includes a liquid supply unite 1 which fills at least a part of the space between the projection optical system and the substrate with a liquid 50, and exposes the substrate by projecting an image of a pattern onto the substrate via the projection optical system. The liquid supply unite 1 includes a degassing unit 21 which suppresses the generation of the bubble in the liquid 50.

A method of producing a semiconductor device wherein an already formed opening portion inner wall of an organic based interlayer insulation film is prevented from changing in quality or corroding when performing etching on other organic material. The production method includes a step of depositing organic based interlayer insulation films (4, 6), a step of forming an opening on the organic based interlayer insulation films (4, 6), and a step of silylating a wall surface portion of the organic based interlayer insulation films (4, 6) exposed in the opening portion for reforming (forming reformed layers (4a, 6a) by silylation). A more preferable production method further includes a step of forming protective layers (4b, 6b) including an inorganic based insulation material on a surface of the silylated opening portion wall surface.

The present invention provides 1. A method for forming an inorganic thin film pattern on a polyimide resin, which has: (1) a step of forming an alkali-resistant protective film having a thickness of 0.01 to 10 μm on a surface of a polyimide resin; (2) a step of removing the alkali-resistant protective film and a superficial portion of the polyimide resin at the site where an inorganic thin film pattern is formed to form a concave part; (3) a step of contacting an alkaline aqueous solution to the polyimide resin in the concave part to cleave an imide ring of the polyimide resin so as to produce a carboxyl group whereby a polyimide resin having the carboxyl group is formed; (4) a step of contacting a solution containing a metal ion to the polyimide resin having the carboxyl group so as to produce a metal salt of the carboxyl group; and (5) a step of separating the metal salt as a metal, a metal oxide or a semiconductor on the surface of the polyimide resin so as to form the inorganic thin film pattern.

A curable composition for photoimprints containing a photopolymerizable monomer and a photopolymerization initiator, wherein the proportion of the compound having a molecular weight of at most 190 in the composition is at most 20% by mass, and the viscosity of the composition is from 3 to 50 mPa·s at 25° C., is excellent in patterning accuracy.

An embodiment of the present invention provides a cover glass which is slim and gives a better aesthetic feeling, and a method for manufacturing the same. The cover glass according to an embodiment of the present invention comprises: a glass substrate; a pattern portion formed on the glass substrate by etching; and a multi-layered thin film coated on the surface of the pattern portion.

A sheet (20) for use in microfluidic, microelectronic, micromechanical, and / or microoptical applications requiring through-flow, through-conductivity, through-transmission, and / or other through patterns. The sheet (20) includes micro-sized architecture including at least one via (22) extending through the thickness of the layer of thermoplastic material. The via-defining walls in the thermoplastic layer are formed by the thermoplastic material flowing around a projection and then solidifying around the projection.

A method for reducing line edge roughness of photoresist, at least include: provide a photoresist which at least has a trench and is located on substrate; fill trenches so let that trenches are totally filled by an additional material; remove part of additional material which is located on photoresist and substrate; and treat additional material so let that adhesion between additional material and photoresist is enhanced after additional material is treated. Moreover, while only trenches are filled by additional material, step of removing part of additional material could be omitted; while adhesion between additional material and photoresist is good, step of treating additional material could be omitted.

A light-curing thermo-curing resin composition and a printed circuit board obtained using the same are provided, the composition has high light sensitivity and excellent curing depth in ultraviolet ray and laser exposure, thus further having great developing ability to pass through diluted alkaline aqueous solution while being excellent in storage stability and operability, so the composition is suitable for solder resisting agent. The light-curing thermo-curing resin composition comprises (A) carboxyl-containing resin, (B) mercaptobutyric acid or derivatives thereof, (C) photopolymerization initiator, (D) compounds having 2 or more of olefinic unsaturated groups in the molecules, and (E) thermo-curing components. The suitable (A) carboxyl-containing resin is preferably the carboxyl-containing resin capable of free radical polymerization and having unsaturated double bond. In addition, the (C) photopolymerization initiator is preferably oximes photopolymerization initiator (C1), particularly preferably proxetil photopolymerization initiator, aminoacetophenone photopolymerization initiator and / or acyl phosphine oxide photopolymerization initiator.

A mask blank includes a substrate and a thin film formed thereon and used to form a pattern. The mask blank is adapted to be subjected to dry etching corresponding to a method of producing an exposure mask by patterning the thin film by dry etching using an etching gas substantially free from oxygen with a resist pattern formed on the thin film used as a mask. The thin film has a protective layer formed at least at its upper layer and containing 60 atomic % or more oxygen. For example, the dry etching is performed by the use of a chlorine-based gas substantially free from oxygen.

An exposure apparatus, wherein exposure is carried out while filling a space between a projection optical system and a substrate with a liquid, enables to suppress deterioration of a pattern image caused by any bubble in the liquid. The exposure apparatus includes a liquid supply unit 1 which fills at least a part of the space between the projection optical system and the substrate with a liquid 50, and exposes the substrate by projecting an image of a pattern onto the substrate via the projection optical system. The liquid supply unit 1 includes a degassing unit 21 which suppresses the generation of the bubble in the liquid 50.

A semiconductor device having trench gates in element regions R1 formed in a semiconductor substrate. Second trenches T2 having the same depth as that of first trenches T1 making up the trench gates are provided along a marginal area of the semiconductor substrate.

Disclosed is a phase-shift blankmask, in which a light-shielding film includes a metal compound and having a structure of a multi-layer film or a continuous film, which includes a first light-shielding layer and a second light-shielding layer. The second light-shielding layer has higher optical density at an exposure wavelength per unit thickness (Å) than the first light-shielding layer. The first light-shielding layer occupies 70% to 90% of the whole thickness of the light-shielding film. With this, the blankmask secures a light-shielding effect, has an improved etching speed, and makes a resist film thinner, thereby achieving a fine pattern.

A method of manufacturing a thin film transistor is capable of enhancing pattern precision of an organic semiconductor layer and simplifying a patterning process. The method includes forming an organic insulating film on a substrate and forming a bank having the first and second concave portions and a third concave portion in the organic insulating film, the third concave portion being formed on the first and second concave portions. The method further includes forming a source electrode and a drain electrode in the first and second concave portions and forming an active layer in the third concave portion, the active layer contacting the source electrode and the drain electrode.

The present invention provides curing combination for stamping, having characters of good stamping and photo-curing, mechanical features and various durability, wherein the photo-curing character, heat resisting property and elastic restitution rate are excellent, condensate using the combination and a method for producing the same, and members for a liquid crystal display device. The curing combination contains optical polymeric monomer, optical polymerization initiator and anti-oxidant, characterized in that a content of the optical polymerism monomer is 80-99% by weight, a content of the anti-oxidant is 0.3-7% by weight, and the anti-oxidant is one of only hindered phenol series anti-oxidant, only semi hindered phenol series anti-oxidant, mixture of hindered phenol series anti-oxidant and semi hindered phenol series anti-oxidant, or only hindered amine series anti-oxidant.

A method for manufacturing a roller mold is described, including the following steps. A body is provided, wherein the body is a cylinder. A photoresist layer is formed to completely cover a cambered surface of the body. A mold including a pattern structure including a convex portion and a concave portion is provided, and the convex portion and the concave portion are covered with a transferred pattern layer. The mold is pressed on the photoresist layer. The body is rolled to transfer the transferred pattern layer on the convex portion onto the photoresist layer. The mold is removed. An UV light exposure step is performed on an exposed portion of the photoresist layer to transfer a pattern of the transferred pattern layer to the photoresist layer. The exposed portion of the photoresist layer is removed to expose a portion of the cambered surface of the body. A structure layer is formed on the portion of the cambered surface and the transferred pattern layer. The photoresist layer, and the structure layer and the transferred pattern layer on the photoresist layer are removed.

The present invention provides a radiation curing composition comprising (a): a siloxane resin, (b): a photoacid generator or photobase generator, and (c): a solvent capable of dissolving component (a), and (d): a curing acceleration catalyst.

A method for fabricating a photomask includes the steps of forming a phase shift layer, a light-shielding layer, and a negative resist layer in that order on a transparent substrate, forming a first resist pattern including a pattern corresponding to a transfer pattern by performing first exposure and development on the negative resist layer, forming a light-shielding pattern by etching the light-shielding layer using the first resist pattern as a mask, removing the first resist pattern, and then forming a positive resist layer thereon, forming a second resist pattern including a pattern corresponding to a light-absorbing pattern by performing second exposure and development on the positive resist layer, and forming a phase shift pattern by etching the phase shift layer using the second resist pattern as a mask.

A memory cell transistor and a planar capacitor are provided in a memory region, and both transistors of a CMOS device are provided in a logic circuit region. A capacitance dielectric 15 and a plate electrode 16b of the planar capacitor are provided over a trench shared with a shallow trench isolation 12a, and the upper part of the trench is filled with the capacitance dielectric 15 and the plate electrode 16b. An n-type diffusion layer 19 that is a storage node is formed, with an end region thereof extending along one side of the upper part of the trench, to a region of the substrate overlapping with the shallow trench isolation 12a. The area of a part of the substrate functioning as a capacitor can be increased without increasing the substrate area.

A positive-tone radiation-sensitive composition including: (A) at least one compound selected from the group consisting of a hydrolyzable silane compound represented by general formula (R1)pSi(X)4−p (wherein R1 is a non-hydrolyzable organic group having 1 to 12 carbon atoms, X is a hydrolyzable group, and p is an integer from 0 to 3), hydrolyzates thereof and condensates thereof; (B) a photoacid generator; and (C) a basic compound. A cured product that is excellent in terms of pattern precision and so on can be obtained by using the composition. The composition can be used as a material for forming optical waveguides.

A patterning process is provided. The patterning process includes the following steps. First, a substrate is provided. Then, a patterned self-assembled monolayer (SAM) is formed on the substrate. Afterwards, an organic material layer is formed over the substrate to cover the self-assembled monolayer. Thereafter, a portion of the organic material layer is removed, wherein the organic material layer in contact with the patterned SAM is retained such that a patterned organic material layer.

An electrode substrate of a PDP has an electrode pattern on a glass substrate and is made by baking and removing a resin binder in a conductive pattern composed of a conductive ink. The conductive pattern is formed by printing the conductive ink on the glass substrate by an intaglio offset printing method. The conductive ink is formed by dispersing or dissolving a metal powder and a resin binder into a solvent. A printing blanket used for printing the conductive pattern has a rubber layer on the surface of the printing blanket, and the rubber layer poses a volume increasing rate under 20% when the rubber is immersed in the solvent for 24 hours at 23° C. The printing blanket is heated such that a surface temperature TB of the printing blanket is about 40~200° C., and then the printing blanket is cooled in a condition that the surface temperature TB (° C.) of the printing blanket with respect to a surface temperature TP (° C.) of the intaglio satisfies the equation |TP-TB|<=5° C. As a result, the electrode substrate has a tiny and highly precise electrode pattern.

The disclosure provides a manufacture method of a quantum dot color film substrate, a high precision quantum dot pattern is formed utilizing a property of moisture varied layer of a photocatalyst achieving better moisture after being radiated by ultraviolet light, manufacture process of a quantum dot pattern is simplified as well as enhancing precision of quantum dot layer pattern, and consuming less quantum dot materials and costs, produced quantum dot color film substrate can improve color saturation and gamut of a display device efficiently, reinforcing color display ability of a display panel

In a method for etching a piezoelectric film and a manufacturing method thereof, a piezoelectric film is formed on a substrate on which a lower electrode is formed, a metal film having a thickness of 20 nm to 300 nm is formed, a patterned resist film is formed, the metal film is etched with a first etchant to which the piezoelectric film has etching resistance, and the piezoelectric film is etched with a second etchant to which the metal film has etching resistance.

In order to form a fine mask pattern with high accuracy, in a mask blank in which a light-semitransmissive film, a light shielding film, and a hard mask film are laminated in the stated order on a transparent substrate, the light-semitransmissive film containing silicon and additionally nitrogen, the hard mask film containing silicon or tantalum, and additionally oxygen, the light shielding film having the laminate structure of a lower layer, an intermediate layer, and an upper layer and containing chromium, conditions on the light shielding film are adjusted so that etching rates using a mixture gas of chlorine and oxygen are the lowest for the upper layer and the next lowest for the lower layer.

A thin film capacitor comprising a lower electrode formed on a predetermined surface, a dielectric layer formed on the lower electrode, and an upper electrode formed on the dielectric layer, wherein the end portion of the lower electrode is further covered by an insulator other than the dielectric layer.