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113results about How to "High pattern accuracy" patented technology

Process for producing semiconductor device and semiconductor device

A method of producing a semiconductor device wherein an already formed opening portion inner wall of an organic based interlayer insulation film is prevented from changing in quality or corroding when performing etching on other organic material. The production method includes a step of depositing organic based interlayer insulation films (4, 6), a step of forming an opening on the organic based interlayer insulation films (4, 6), and a step of silylating a wall surface portion of the organic based interlayer insulation films (4, 6) exposed in the opening portion for reforming (forming reformed layers (4a, 6a) by silylation). A more preferable production method further includes a step of forming protective layers (4b, 6b) including an inorganic based insulation material on a surface of the silylated opening portion wall surface.
Owner:SONY CORP

Method of manufacturing thin film transistor, thin film transistor manufactured by the method, and display device employing the same

ActiveUS20060197079A1Enhance pattern precisionSimplify patterning processSolid-state devicesSemiconductor/solid-state device manufacturingEngineeringOrganic semiconductor
A method of manufacturing a thin film transistor is capable of enhancing pattern precision of an organic semiconductor layer and simplifying a patterning process. The method includes forming an organic insulating film on a substrate and forming a bank having the first and second concave portions and a third concave portion in the organic insulating film, the third concave portion being formed on the first and second concave portions. The method further includes forming a source electrode and a drain electrode in the first and second concave portions and forming an active layer in the third concave portion, the active layer contacting the source electrode and the drain electrode.
Owner:SAMSUNG DISPLAY CO LTD

Manufacture method of quantum dot color film substrate

The disclosure provides a manufacture method of a quantum dot color film substrate, a high precision quantum dot pattern is formed utilizing a property of moisture varied layer of a photocatalyst achieving better moisture after being radiated by ultraviolet light, manufacture process of a quantum dot pattern is simplified as well as enhancing precision of quantum dot layer pattern, and consuming less quantum dot materials and costs, produced quantum dot color film substrate can improve color saturation and gamut of a display device efficiently, reinforcing color display ability of a display panel
Owner:TCL CHINA STAR OPTOELECTRONICS TECH CO LTD

Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device

In order to form a fine mask pattern with high accuracy, in a mask blank in which a light-semitransmissive film, a light shielding film, and a hard mask film are laminated in the stated order on a transparent substrate, the light-semitransmissive film containing silicon and additionally nitrogen, the hard mask film containing silicon or tantalum, and additionally oxygen, the light shielding film having the laminate structure of a lower layer, an intermediate layer, and an upper layer and containing chromium, conditions on the light shielding film are adjusted so that etching rates using a mixture gas of chlorine and oxygen are the lowest for the upper layer and the next lowest for the lower layer.
Owner:HOYA CORP
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