37results about How to "Eliminate dislocations" patented technology

The invention provides a method of pulling up a silicon single crystal in which a variation rate of a neck diameter is controlled to be within a predetermined range, and a dislocation in a neck is eliminated. When pulling up the silicon single crystal, a single crystal with a predetermined crystal diameter is grown by bringing a seed crystal into contact with a material silicon melt, pulling up the seed crystal, growing the neck, and then increasing a diameter. The above-mentioned neck diameter is increased and decreased to grow the neck, during which a neck diameter variation rate is greater than or equal to 0.05 and less than 0.5, assuming that a value obtained in such a manner that a neck diameter difference (A-B) between adjoining inflection points is divided by a neck length L between the above-mentioned inflection points P1 and P2 is the neck diameter variation rate.

The invention discloses an alloy brazing filler metal for vacuum sealing and connection. Metal elements of the alloy brazing filler metal comprise, by mass percentage, 54.4-64.8% of Ag, 28-36% of Cu,7-9% of In and 0.2-0.6% of Ce. The prepared alloy brazing filler metal is low in fusion point, high in cleanliness and tensile strength and good in oxidation resistance.

Implants are disclosed. Methods of making and using implants are also disclosed.

The invention relates to a seeding method for growth of sapphire crystal with a KY (Kyropoulos) method. A non-rotating symmetric structure of a radiation heat dissipation opening of seed crystal is used, and the seeding method comprises following steps during seeding: (1), the seed crystal is immersed 3-5 mm below the liquid level of melt; (2), a crystal plate grows out from the seed crystal preferentially towards one side after the heat dissipation opening adopting the non-rotating symmetric structure dissipates heat; (3), the seed crystal is lifted and pulled at an average lifting and pulling speed being 3-12 mm / h, alternate instant lifting is adopted in the lifting and pulling process, the seed crystal is rotated by a given angle, and a crystal plate grows out again in the heat dissipation direction after alternate instant lifting, so that next instant lifting is facilitated; (4), the step (3) is carried out repeatedly until the length of a crystal section reaches 60-80 mm, the crystal section adopting a spiral structure is formed, and when the equivalent diameter of the cross section of a solid-liquid interface reaches 40-60 mm, seeding is finished. The seeding method has the advantages as follows: the spiral seeding structure can be obtained, defects and dislocation of the seed crystal can be eliminated to the largest extent, breaking cannot be caused easily, the yield of crystal can be increased, and industrial production is facilitated.

A Cu—Ni—Mo alloy thin film, including Ni as a solution element and Mo as a diffusion barrier element. Ni and Mo are co-doped with Cu. The enthalpy of mixing between Mo and Cu is +19 kJ / mol, and the enthalpy of mixing between Mo and Ni is −7 kJ / mol. The atomic fraction of Mo / Ni is within the range of 0.06-0.20 or the weight faction of Mo / Ni within the range of 0.10-0.33. The total amount of Ni and Mo additions is within the range of 0.14-1.02 at. % or wt. %. A method for manufacturing the alloy thin film is also provided.

The invention relates to a preparation method and product of a deformed magnesium-tin alloy with high thermal conductivity, belonging to the technical field of magnesium alloys. The method includes five processes of solid solution treatment, extrusion treatment, aging treatment, pre-deformation treatment and annealing treatment. The method mainly Through the combination of plastic deformation and heat treatment, through reasonable setting of process conditions in each process, the purpose of better controlling the grain orientation and precipitated phase orientation in the magnesium-tin alloy is achieved, so that the final prepared magnesium-tin alloy has high thermal conductivity. Rate. The method is simple and easy to operate, has low requirements on equipment and low cost, and is suitable for industrial production.

The invention discloses a method for preparing a seed crystal for ingot single crystal and a laying method thereof. It specifically includes the following steps: in the seed crystal growth stage, firstly determine the crystal direction corresponding to the crystal growth direction, and perform vertical growth along the determined crystal growth direction, and adopt the preparation method of dislocation-free single crystal to carry out, the seed The crystal grows into a rod; in the seed crystal processing stage, the seed crystal rod must first be cut into a bar with a square cross-section along the growth direction of the seed crystal corresponding to the crystal direction; after the rod is cut, the seed crystal is cut into a seed crystal After the block is cut, the seed crystal block is ground, chamfered, and then washed with alkali to eliminate the damaged layer on the surface of the seed crystal during processing. The beneficial effects of the present invention are: polycrystalline nucleation will not occur, and the possibility of polycrystalline nucleation of cast single crystals is eliminated from the source; 50% of dislocations in seed crystals can be eliminated, and during the entire growth process of single crystals In this way, the probability of dislocation generation can be minimized.

The invention discloses a double-layer crucible for growing silicon single crystals by a directional solidification method, which comprises an outer crucible and an inner crucible nested into the outer crucible, wherein the inner crucible comprises an inner crucible main body and an inner crucible bottom; the outer crucible comprises an outer crucible main body and an outer crucible bottom; the inner crucible bottom is provided with a seed crystal sleeve for placing seed crystals; the outer crucible bottom is provided with an anti-leakage cavity; an anti-leakage agent is placed in the anti-leakage cavity; and the internal cavity of the inner crucible main body is communicated with the anti-leakage cavity through the internal cavity of the seed crystal sleeve. The anti-leakage agent is notreacted with silicon and is immiscible with the silicon, the density of the anti-leakage agent is more than 2.4g / cm<3>, and the melting temperature of the anti-leakage agent is less than 1,410 DEG C.The double-layer crucible can effectively solve the seed crystal placing problem, realizes silicon single crystal growth by the directional solidification method, meanwhile can furthest prevent molten silicon from leaking from the seed crystal sleeve, has low cost and a simple structure, and is easy to process.

The invention provides a semiconductor structure comprising a first semiconductor material substrate, a first porous structure layer, a second porous structure layer and a second semiconductor material layer, wherein the first porous structure layer is formed on the first semiconductor material substrate; the second porous structure layer is formed on the first porous structure layer; the porosity and the aperture of the second porous structure layer are both less than the porosity and the aperture of the first porous structure layer; and the second semiconductor material layer is formed on the second porous structure layer. The invention can release the thermal mismatch stress of Si materials and epitaxial materials through the porous structure layers, prevent the problems of cracking and the like of an epitaxial film with larger thickness and enhance the quality of an epitaxial film crystal, thereby extending an epitaxial material layer (such as GaN and the like) which has large thickness and higher thermal mismatch stress with the Si materials on a Si substrate; and in addition, the porous Si materials can be removed in a subsequent process, therefore a subsequent device process can not be influenced.

The invention discloses a seeding mold for growing silicon crystals by using an orientated solidification method and a crystal growing method. The seeding mold is arranged at the internal bottom of a quartz crucible and comprises a seed crystal container and a sealing liquid container, wherein the sealing liquid container consists of cavities connected to the periphery of the seed crystal container and is used for accommodating a sealing substance; and the seed crystal container is provided with a first cavity for accommodating seed crystals. A method for growing monocrystalline silicon / similar monocrystalline silicon by adopting the seeding mold comprises the following steps of: arranging or setting the seeding mold at the bottom of the quartz crucible; arranging the sealing substance and the seed crystals in the sealing liquid container and the seed crystal container respectively; putting a silicon raw material into the quartz crucible; and growing monocrystals / similar monocrystals by adopting orientated solidification. By adopting the seeding mold and the crystal growing method, the problem of placement of the seed crystals can be solved without changing the structures of the conventional orientated solidification and quartz crucible, dislocation of the seed crystals in the seeding process is eliminated, and the spontaneous nucleation phenomenon of melt from the bottom wallface of the crucible is avoided. The seeding mold has low cost and is easy to process.

The invention provides a thermal treatment method for a formed weld joint of a drill rod. The thermal treatment method comprises the following steps that firstly, annealing treatment is carried out on a weld joint zone which is formed between a drill rod pipe body and a connector through friction welding; then the annealed drill rod is placed in air to be cooled until the drill rod is cooled to the room temperature; and finally the cooled drill rod is subjected to tempering treatment. By means of the thermal treatment method, as tempering sorbite is formed, the structure of the weld joint of the drill rod is finer, and the problem of cracks in the weld joint of the small drill rod is completely solved.

The invention discloses a method for improving thermal conductivity of a magnesium-based composite material by nano diamond and the magnesium-based composite material. The preparation method comprisesthe steps of firstly, uniformly dispersing the nano diamond in a magnesium alloy matrix by an ultrasonic dispersion method, sintering ball-milled powder in a vacuum hot-pressing sintering furnace toobtain a sintered blank, increasing diamond activity at a nano level by high-temperature and high-pressure treatment, and further forming a layer of carbide between the nano diamond and the magnesiumalloy matrix. Therefore, the interface bonding strength is improved, interface defects are reduced, and the interface thermal conductivity is improved. The preparation method is simple to operate andeasy to realize, and the slight carbonization reaction between the nano diamond and the magnesium alloy matrix is realized through high temperature and high pressure. The magnesium-based composite material prepared by the method has the advantages that on one hand, the diamond particle reinforced magnesium-based composite material obtains high thermal conductivity, has low thermal expansion coefficient matched with a semiconductor material, and has good application prospects.

The invention belongs to the technical field of aluminum alloy deformation heat-treatment and discloses a deformation heat-treatment method for improving tensile properties of a 6000-series aluminum alloy thin plate. The deformation heat-treatment method is suitable for improvement of a 6000-series aluminum alloy thin plate. Aiming at further improving tensile properties of a 6000-series aluminum alloy thin plate, the invention provides the deformation heat-treatment method. The deformation heat-treatment method is mainly characterized by comprising the following steps of before final molding of a 6000-series aluminum alloy thin plate, carrying out solution treatment, carrying out quenching, carrying out large-deflection cold rolling so that required thin plate thickness is obtained, carrying out solution treatment, carrying out quenching and carrying out peak aging treatment. The deformation heat-treatment method can greatly improve strength of the 6000-series aluminum alloy thin plate and maintain good plasticity.

The invention belongs to the technical field of preparation and processing of a target material, and particularly relates to a surface treatment method of a high pure metal sputtering target material. The surface treatment method comprises the following steps: the target material is firstly subjected to surface precision machining, surface grinding and surface cleaning and then subjected to rapid surface heat treatment by adopting a continuous wave laser heat treatment method, an electron beam scanning method or noncoherent broadband frequency light source method, a hardened layer on the surface of the target material recrystallizes through the skin effect generated by rapid heat treatment, stress and dislocation in the hardened layer is eliminated, and a recrystallization texture basically consistent with the matrix is obtained. The surface treatment method is simple in process, high in speed, high in universality, suitable for target materials of different sizes, free of material pollution during the preparation process, low in material loss and environment friendly.

Disclosed is a flash memory, comprising a substrate, a stack structure arranged on the substrate, a source electrode, a drain electrode and a source terminal spacing layer; wherein the stack structure is composed of a tunnel oxide layer, a charge storage layer arranged on the tunnel oxide layer, an inter-gate medium layer arranged on the charge storage layer and a control grid arranged on the inter-gate medium layer. The source electrode and the drain electrode are arranged in the substrate respectively at two sides of the charge storage layer. The source terminal spacing layer is arranged on one side wall of the stack structure, which is close to the source electrode, so as to prevent the parts of the tunnel oxide layer and the inter-gate medium layer, which are close to the source electrode, from being oxidated again, which leads to the increase of the thickness.

The invention discloses a preparation method of a ternary alloy sealing material. The ternary alloy sealing material comprises, by mass, 60-67% of Ag, 25-30% of Cu and 8-12% of In. The preparation method comprises the steps that 99.99% Ag and a 99.9% Cu pipe are obtained, and 99.99% In is placed in the 99.9% Cu pipe; the raw materials are placed in a vacuum medium-frequency smelting furnace, vacuumization is performed till vacuum pressure reaches 0.02-0.04 MPa, and inert gas is input after temperature is increased to reach 1000-1100 DEG C; heat preservation is performed for 20-30 min, and sufficient stirring and casting are performed through the medium-frequency furnace; a cast ingot is laced in a vacuum annealing furnace for annealing, the temperature is 600-700 DEG C, the heat preservation time is 2-5 h, and the cast ingot is taken out after the temperature reaches 60 DEG C; and annealing is performed after the cast ingot is calendered by 1-2 mm, the temperature is 500-600 DEG C, heat preservation time is 2-3 h, inert gas is input, and the cast ingot is rolled to 0.1-0.12 mm after being cooled. The sealing material is high in cleanliness and good in welding performance.