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Method of pulling up silicon single crystal

A single crystal silicon, crystallization technology, applied in the direction of self-melt pulling method, single crystal growth, single crystal growth, etc., can solve the problems of increased dislocation density, difficulty in eliminating dislocations, and large temperature gradient on the outer surface of the neck. , to achieve the effect of suppressing the change rate of the neck diameter, realizing the loss of production time, and realizing the shortening

Inactive Publication Date: 2009-02-11
TOSHIBA CERAMICS CO
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0013] In addition, in the method described in the above-mentioned Patent Document 4, if the change amount of the neck diameter is increased, the temperature gradient on the outer surface of the neck becomes larger when the neck is constricted, the dislocation density increases, and it becomes difficult to eliminate dislocations.

Method used

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  • Method of pulling up silicon single crystal
  • Method of pulling up silicon single crystal
  • Method of pulling up silicon single crystal

Examples

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Embodiment 1～6

[0043] [Examples 1-6, Comparative Examples 1-5]

[0044] In a quartz crucible with a diameter of 24 inches, 100 kg of raw silicon melt was filled, and a single crystal pulling device was used to grow the neck so that the average neck diameter was 4.5 mm, and then a single crystal silicon was grown.

[0045] During neck growth, the conditions were the magnetic field application, crucible rotation speed, crystal rotation speed, and single crystal pulling speed as shown in Examples 1 to 6 and Comparative Examples 1 to 5 in Table 1, respectively.

[0046] The maximum neck diameter change rate and the length from the growth start position to the position after dislocation removal were measured respectively.

[0047] A summary of these results is shown in Table 1.

[0048] In addition, the measured value of the magnetic field strength is a measured value of the crucible wall surface in the case of a tangent magnetic field, and a measured value of the center in the case of a horizon...

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Abstract

The invention provides a method of pulling up a silicon single crystal in which a variation rate of a neck diameter is controlled to be within a predetermined range, and a dislocation in a neck is eliminated. When pulling up the silicon single crystal, a single crystal with a predetermined crystal diameter is grown by bringing a seed crystal into contact with a material silicon melt, pulling up the seed crystal, growing the neck, and then increasing a diameter. The above-mentioned neck diameter is increased and decreased to grow the neck, during which a neck diameter variation rate is greater than or equal to 0.05 and less than 0.5, assuming that a value obtained in such a manner that a neck diameter difference (A-B) between adjoining inflection points is divided by a neck length L between the above-mentioned inflection points P1 and P2 is the neck diameter variation rate.

Description

technical field [0001] The present invention relates to a method for pulling single crystal silicon, the method adopts a magnetic field applied Czochralski method (Magnetic field applied Czochralski Method; hereinafter referred to as MCZ method). Background technique [0002] As methods for producing silicon single crystals, the CZ method and the MCZ method using a magnetic field are widely used because single crystals with no dislocations or crystal defects, large diameters, and high purity can be obtained relatively easily. [0003] When manufacturing single crystal silicon using the CZ method, for example, in such as figure 2 In the shown single crystal pulling device, the seed crystal 1 made of single crystal silicon is mixed with the raw silicon melt 5 filled in the quartz crucible 6 in the hot zone heated by the heater 7 and the heat insulating body 8 in the chamber 9. After contact, slowly pull while rotating to form a neck 2, gradually increase the crystal diameter ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/00C30B15/22C30B29/06
CPCC30B15/24C30B15/30C30B29/06
Inventor 南俊郎
Owner TOSHIBA CERAMICS CO
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