The invention discloses a rapid ending method for Czochralski silicon. The rapid ending method for Czochralski silicon comprises the following steps: in an early stage, stopping rising of a crucible,increasing the temperature of a thermal field, maintaining a crystal growth speed, a crystal rotation speed and a crucible rotation speed unchanged, and allowing a crystal diameter to decrease; in a middle stage, reducing the crystal growth speed, driving the crucible to rise, then reducing heating power, increasing the crystal rotation speed and the crucible rotation speed, and allowing the risetrend of the temperature of the thermal field to slow down; and in a later stage, stopping rising of the crucible, maintaining the crystal rotation speed and the crucible rotation speed unchanged, increasing the crystal growth speed, and lifting crystal out of the liquid level of molten silicon when the crystal diameter decreases to 25 to 30 mm so as to complete ending. The rapid ending method forCzochralski silicon can rapidly decrease the crystal diameter on the premise of maintaining the growth speed of monocrystal silicon crystals unchanged; then the method reduces the crystal growth speed, increases the crystal rotation speed and the crucible rotation speed, and decreases heating power to slow down the temperature rising trend of the thermal field, so the tail part of a crystal is prevented from break-off; and finally, a crystal pulling speed is rapidly increased to complete ending, so ending time is greatly shortened, and yield is substantially increased.