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Production method of solar-grade czochralski silicon

A production method, a solar-grade technology, applied in the directions of single crystal growth, single crystal growth, crystal growth, etc., can solve the problem of lack of reducing black chips and black corners, and achieve the reduction of void defects, oxygen content, and temperature. The effect of fluctuations

Inactive Publication Date: 2015-03-25
XINGTAI JINGLONG ELECTRONICS MATERIAL
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there is still a lack of a simple, effective and easy method for reducing black chips and black corners

Method used

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  • Production method of solar-grade czochralski silicon

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Embodiment 1

[0033] A method for producing solar-grade Czochralski monocrystalline silicon, comprising the steps of:

[0034] (1) Feeding: Add 120 kg of silicon raw material and 31.49 g of boron into the quartz crucible;

[0035] (2) Melting: Close and vacuumize the single crystal furnace so that the pressure in the single crystal furnace is maintained below 5Pa, and then increase the heating power to 95-100 kW (about 1420 °C) at one time;

[0036] (3) Temperature stabilization: When the silicon raw material is melted into a liquid, the heating power is reduced to 45 kW and the automatic temperature program is put into operation. The automatic temperature program keeps the temperature in the furnace constant for 1 hour;

[0037] (4) Seeding: adjust the position of the crucible so that the distance between the liquid surface of the silicon liquid and the guide tube is 15 mm, set the rotation of the crystal and the crucible to 8 turns per minute, and then lower the seed crystal to the liqui...

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Abstract

The invention discloses a production method of solar-grade czochralski silicon, and relates to the technical field of czochralski silicon. The production method comprises the following eight steps of charging, melting, stabilizing the temperature, seeding, shouldering, performing equal-diameter growth and ending. According to the production method disclosed by the invention, in the seeding process, the crystal rotation and the crucible rotation are set to be 8 revolutions per minute. The production method is simple and convenient to operate, easy to realize, capable of effectively reducing crystal defects which possibly appear in a crystallization process, lowering a problem of producing black chips and black angle plates in the czochralski silicon, remarkably improving the quality of the single crystal and prolonging the service life of the single crystal, avoiding returned goods due to product quality defects and saving unnecessary fund waste for the enterprises.

Description

technical field [0001] The invention relates to the technical field of Czochralski single crystal silicon. Background technique [0002] Solar energy is one of the most important green energy sources in the future. As the core part of high-efficiency solar cells, high-quality monocrystalline silicon has always been a key product for research and development. [0003] The production methods of monocrystalline silicon mainly include Czochralski method (CZ), zone melting method (FZ) and epitaxy method, among which the Czochralski method and zone melting method are used to elongate single crystal silicon rods, while the epitaxy method is used to elongate Single crystal silicon thin film. Since monocrystalline silicon produced by the Czochralski method is widely used in key fields such as semiconductor integrated circuits, diodes, epitaxial wafer substrates, and solar cells, it has received special attention. [0004] At present, in the production field of Czochralski single cr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/06C30B15/00
CPCC30B29/06C30B15/00
Inventor 刘彬国何京辉曹祥瑞颜超程志黄瑞强周子江刘钦范晓普
Owner XINGTAI JINGLONG ELECTRONICS MATERIAL
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