Production method of solar-grade czochralski silicon
A production method, a solar-grade technology, applied in the directions of single crystal growth, single crystal growth, crystal growth, etc., can solve the problem of lack of reducing black chips and black corners, and achieve the reduction of void defects, oxygen content, and temperature. The effect of fluctuations
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[0033] A method for producing solar-grade Czochralski monocrystalline silicon, comprising the steps of:
[0034] (1) Feeding: Add 120 kg of silicon raw material and 31.49 g of boron into the quartz crucible;
[0035] (2) Melting: Close and vacuumize the single crystal furnace so that the pressure in the single crystal furnace is maintained below 5Pa, and then increase the heating power to 95-100 kW (about 1420 °C) at one time;
[0036] (3) Temperature stabilization: When the silicon raw material is melted into a liquid, the heating power is reduced to 45 kW and the automatic temperature program is put into operation. The automatic temperature program keeps the temperature in the furnace constant for 1 hour;
[0037] (4) Seeding: adjust the position of the crucible so that the distance between the liquid surface of the silicon liquid and the guide tube is 15 mm, set the rotation of the crystal and the crucible to 8 turns per minute, and then lower the seed crystal to the liqui...
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