Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Ce3xGy3(1-x-y)Y3yAl5O12 doped garnet high-temperature scintillation crystal and preparation method thereof

A technology of scintillation crystal and garnet is applied in the field of high temperature scintillation crystal and its preparation, such as cerium-doped gadolinium aluminate (Y3yAl5O12), which can solve the problems of low density cutoff energy, uneven distribution of Ce ions, huge difference in ion radius and the like.

Inactive Publication Date: 2016-11-23
SUZHOU SIHAI CHANGJING PHOTOELECTRIC MATERIAL
View PDF6 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The main disadvantages of Ce:YAG crystals are as follows: 1) Due to the 3+ (R Ce =1.03nm) ions enter the YAG lattice to replace Y with smaller ionic radius 3+ (R Y =0.89nm), due to the large difference in ionic radius, the segregation coefficient of Ce ions in the YAG lattice is very small (~0.1), on the one hand, it leads to uneven distribution of Ce ions in the crystal, and at the same time, it is difficult to realize the Ce:YAG crystal High concentration doping, on the other hand, due to the huge difference in ionic radius, the stress in the crystal structure is relatively large, and the crystal is easy to crack; 2) Ce:YAG crystal density is small (about 4.55g / cm 3 ) leads to a small cut-off energy when detecting high-energy rays, and has certain limitations in the detection of high-energy gamma rays

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Example 1: Growth of Ce by pulling method 3+ Doping concentration of 1.0at% Ce 0.03 :Gy 0.27 Y 2.7 Al 5 o 12 Flashing crystals.

[0026] Firstly, the high-purity oxide powders were properly pre-dried in the air to remove the adsorbed water, and burned at 1000°C for 10h, and then the CeO 2 (5N), Gy 2 o 3 (5N), Y 2 o 3 (5N) and Al 2 o 3 (5N) The raw materials are weighed and prepared according to the molar ratio. After mixing evenly, press it into a block with an isostatic press, put it in an iridium crucible, and grow the crystal by the pulling method. The seed crystal is a pure YAG single crystal rod in the direction, and the crystal growth is carried out in a high-purity Ar atmosphere. The pulling speed of the crystal is 1mm / h, the rotation speed is 18 rpm, and the growth of the convex interface of the crystal is controlled. All crystal growth is carried out through furnace loading→vacuumizing→argon filling→heating material→baking seed→planting→necking→ ...

Embodiment 2

[0027] Example 2: The doping concentration is 2.0at% Ce grown by pulling method 3+ Ce 0.06 :Gy 0.24 Y 2.7 Al 5 o 12 Flashing crystals.

[0028] Firstly, the high-purity oxide powders were properly pre-dried in the air to remove the adsorbed water, and burned at 1000°C for 10h, and then the CeO 2 (5N), Gy 2 o 3 (5N), Y 2 o 3 (5N) and Al 2 o 3 (5N) The raw materials are weighed and prepared according to the molar ratio. After mixing evenly, press it into a block with an isostatic press, put it in an iridium crucible, and grow the crystal by the pulling method. The seed crystal is a pure YAG single crystal rod in the direction, and the crystal growth is carried out in a high-purity Ar atmosphere. The pulling speed of the crystal is 1mm / h, the rotation speed is 18rpm, and the growth of the convex interface of the crystal is controlled. All crystal growth is carried out through furnace loading→vacuumizing→filling with argon→heating material→baking seed→planting→necki...

Embodiment 3

[0029] Example 3: The doping concentration of pulling method growth is 3.0at%Ce 3+ Ce 0.09 :Gy 0.21 Y 2.7 Al 5 o 12 Flashing crystals.

[0030] Firstly, the high-purity oxide powders were properly pre-dried in the air to remove the adsorbed water, and burned at 1000°C for 10h, and then the CeO 2 (5N), Gy 2 o 3 (5N), Y 2 o 3 (5N) and Al 2 o 3 (5N) The raw materials are weighed and prepared according to the molar ratio. After mixing evenly, press it into a block with an isostatic press, put it in an iridium crucible, and grow the crystal by the pulling method. The seed crystal is a pure YAG single crystal rod in the direction, and the crystal growth is carried out in a high-purity Ar atmosphere. The pulling speed of the crystal is 1mm / h, the rotation speed is 18 rpm, and the growth of the convex interface of the crystal is controlled. All crystal growth is carried out through furnace loading→vacuumizing→argon filling→heating material→baking seed→planting→necking→ ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a Ce3xGy3(1-x-y)Y3yAl5O12 doped garnet high-temperature scintillation crystal and a preparation method thereof. The chemical formula of the crystal is Ce3xGy3(1-x-y)Y3yAl5O12, the processing steps are as below: the Ce3xGy3(1-x-y)Y3yAl5O12 crystal is grown with a medium-frequency induction heating pulling method, a heating unit is an iridium crucible, the raw materials are weighed according to proportion after calcination, the raw materials are pressed into blocks by a static pressure machine after weighing, matching and uniform grinding and mixing, sintering is performed at the temperature of 1,300 DEG C and solid-phase reaction happens, and the sintered raw materials are preserved in a drying cabinet; zirconium oxide and aluminum oxide are used as an insulation cover and an insulation material respectively, an observation hole is sealed by a gem piece, the inside of a hearth is protected by inert gas, the crystal growth temperature is about 1,950 DEG C, the pulling rate is 0.5-5 mm / h, and the crystal rotation speed is 10-30 rpm. The crystal has the advantages that the crystal growth cost is low, large size is easy to prepare, high-concentration doping is realized, the scintillation property is excellent and the like.

Description

technical field [0001] The present invention relates to scintillation crystal, particularly a kind of cerium-doped gadolinium aluminate yttrium (Ce 3x Gy 3(1-x-y) Y 3y Al 5 o 12 ) high temperature scintillation crystal and its preparation method. Background technique [0002] Inorganic scintillation crystals are crystalline energy converters that can convert the energy of high-energy photons (X / γ-rays) or particles (protons, neutrons, etc.) into easily detectable ultraviolet / visible photons. Detectors made of scintillation crystals are widely used in fields such as high-energy physics, nuclear physics, imaging nuclear medicine diagnosis (XCT, PET), geological exploration, astronomy and space physics, and safety inspection. With the rapid development of nuclear detection and related technologies, its application fields are still expanding. Different application fields put forward higher requirements for scintillation crystals, and traditional scintillation crystal detec...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B29/22C30B15/00G01T1/202
Inventor 陈建玉
Owner SUZHOU SIHAI CHANGJING PHOTOELECTRIC MATERIAL
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com