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1102results about How to "Efficient formation" patented technology

Method and apparatus for secure transmission of data and applications

Authenticated transmissions are usually time-consuming and often provide delayed error recognition and correction. This is a problem particularly with hand-held computing devices like personal digital assistants (PDAs), smart phones or smartcards, since these usually possess limited memory, processing power and communications bandwidth. Because of these limitations and generally low transfer rates between the device and a provider or central computer base, such transmissions are time-consuming and delay applications. The late detection of unavoidable transmission errors is especially cumbersome. By applying an optimally taylored authentication scheme to a block-wise transmission and in particular by applying a tree structure for the authentication process during such transfers, the present invention minimes the unavoidable delays and thus provides a solution for these problems.
Owner:IBM CORP

Alloy flake for rare earth magnet, production method thereof, alloy powder for rare earth intered magnet, rare earth sintered magnet, alloy powder for bonded magnet and bonded magnet

Disclosed is a rare earth magnet in the R-T-B (rare earth element-transition metal-boron) system that is made from an improved composition and properties of main phase alloy in the R-T-B system containing Pr and a boundary alloy. Disclosed also is a manufacturing method of the rare earth magnet alloy flake by a strip casting method with improved rotating rollers such that the alloy flake has a specified fine surface roughness and has a small and regulated amount of fine R-rich phase regions. Consequently, the alloy flake for the rare earth magnet does not containing α-Fe and has a homogeneous morphology so that the rare earth magnet formed by sintering or bonding the alloy flakes exhibits excellent magnetic properties.
Owner:TDK CORPARATION

Methods and compositions for enhancing cartilage repair

The invention relates to methods of enhancing repair of a cartilage and / or inducing formation of a cartilage by administering a cell which expresses a factor of the T-box family, which includes inter-alia the brachyury. In another embodiment, the invention relates to an engineered cell, which is transfected with a vector comprising a nucleic acid sequence encoding a factor of the T-box family, thereby expressing a factor of the T-box family. In another embodiment, the invention relates to compositions comprising a vector which comprises a nucleic acid sequence encoding a factor of the T-box family and in another embodiment the composition comprising cell which expresses a factor of the T-box family, which includes inter-alia the brachyury.
Owner:YISSUM RES DEV CO OF THE HEBREW UNIV OF JERUSALEM LTD

Method of manufacturing a semiconductor device and the semiconductor device

The present invention provides a method of manufacturing a trench with a rounded corner portion and a broadened opening. Anisotropic oxidation is carried out using a halogen oxidation method using dichloroethylene (DCE) to form an anisotropic oxide film such that the film thickness in a shoulder portion of the trench is thick and gradually decreases nearer the bottom, the anisotropic oxide film is removed, and the shoulder portion of the trench is preferentially backed off, thereby rounding the shoulder portion sufficiently to broaden the opening. Then, an insulating member is embedded in the trench. The rounded portion of the shoulder portion of the trench and vicinity thereof is used as a channel of a MOS transistor.
Owner:MICRON TECH INC

Process for forming resist pattern, semiconductor device and manufacturing method for the same

To provide a process for forming a resist pattern, which the process can adopt even ArF excimer laser light as exposure light in a patterning step, can thicken a resist pattern (e.g., a hole pattern) regardless of its size, and can reduce the size of a resist space pattern with high precision while preventing changes in the resist pattern shape, to thereby make this process easy, inexpensive and efficient while exceeding the exposure (resolution) limits of light sources of exposure devices. The process of the present invention for forming a resist pattern includes: forming a resist pattern; applying over a surface of the resist pattern a resist pattern thickening material; heating the resist pattern thickening material to thicken the resist pattern followed by development; and heating the resist pattern which has been thickened.
Owner:FUJITSU LTD

Display device and manufacturing method thereof

A display device including a thin film transistor with high electric characteristics and high reliability, and a method for manufacturing the display device in high yield are proposed. In a display device including a channel stop thin film transistor with an inverted-staggered structure, the channel stop thin film transistor with the inverted-staggered structure includes a microcrystalline semiconductor film including a channel formation region. An impurity region including an impurity element imparting one conductivity type is formed as selected in a region in the channel formation region of the microcrystalline semiconductor film which does not overlap with a source electrode or a drain electrode. In the channel formation region, a non-doped region, to which the impurity element imparting one conductivity type is not added, is formed between the impurity region, which is a doped region to which the impurity element is added, and the source region or the drain region.
Owner:SEMICON ENERGY LAB CO LTD
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