1127results about How to "Efficient formation" patented technology

In the course of the present invention, it was discovered that one could regulate association between polypeptides by modifying amino acid residues that form the interface during the association to amino acids carrying the same type of charge. In this context, the present invention enables efficient formation of heterologous molecules. For example, the present invention can be suitably applied to the preparation of bispecific antibodies.

Authenticated transmissions are usually time-consuming and often provide delayed error recognition and correction. This is a problem particularly with hand-held computing devices like personal digital assistants (PDAs), smart phones or smartcards, since these usually possess limited memory, processing power and communications bandwidth. Because of these limitations and generally low transfer rates between the device and a provider or central computer base, such transmissions are time-consuming and delay applications. The late detection of unavoidable transmission errors is especially cumbersome. By applying an optimally taylored authentication scheme to a block-wise transmission and in particular by applying a tree structure for the authentication process during such transfers, the present invention minimes the unavoidable delays and thus provides a solution for these problems.

A light-emitting element having extremely high efficiency of approximately 25% is provided. The light-emitting element includes a light-emitting layer which contains a phosphorescent guest, an n-type host, and a p-type host, where the light-emitting layer is interposed between an n-type layer including the n-type host and a p-type layer including the p-type host, and where the n-type host and the p-type host are able to form an exciplex in the light-emitting layer. The light-emitting element exhibits an extremely high emission efficiency (power efficiency of 74.3 lm / W, external quantum efficiency of 24.5%, energy efficiency of 19.3%) at a low driving voltage (2.6 V) at which luminance of 1200 cd / m2 is attainable.

A light-emitting element having extremely high efficiency of approximately 25% is provided. The light-emitting element includes a light-emitting layer which contains a phosphorescent guest, an n-type host, and a p-type host, where the light-emitting layer is interposed between an n-type layer including the n-type host and a p-type layer including the p-type host, and where the n-type host and the p-type host are able to form an exciplex in the light-emitting layer. The light-emitting element exhibits an extremely high emission efficiency (power efficiency of 74.3 lm / W, external quantum efficiency of 24.5%, energy efficiency of 19.3%) at a low driving voltage (2.6 V) at which luminance of 1200 cd / m2 is attainable.

A semiconductor 100 has a P− body region and an N− drift region in the order from an upper surface side thereof. A gate trench and a terminal trench passing through the P− body region are formed. The respective trenches are surrounded with P diffusion regions at the bottom thereof. The gate trench builds a gate electrode therein. A P−− diffusion region, which is in contact with the end portion in a lengthwise direction of the gate trench and is lower in concentration than the P− body region and the P diffusion region, is formed. The P−− diffusion region is depleted prior to the P diffusion region when the gate voltage is off. The P−− diffusion region serves as a hole supply path to the P diffusion region when the gate voltage is on.

An apparatus and method of use or treatment are disclosed for creating intrauterine adhesions resulting in amenorrhea. In particular, the apparatus relates to an easily deployed intrauterine implant that readily and consistently reduces or eliminates abnormal intrauterine bleeding. In addition, the apparatus is also used as a uterine marker device for visualizing endometrial tissue thickness and potential changes. The method of the present invention serves as a supplement to or a replacement for conventional hysterectomy or ablation / resection procedures used to treat menorrhagia.

A polymer comprising repeat units having formula (1) wherein R1 and R2 are hydrogen or C1-C12 alkyl, or R1 and R2 may bond together to form a ring, and R30 is hydrogen or methyl is used to formulate a resist protective coating material. A protective coating formed therefrom on a resist film is water-insoluble, dissolvable in alkali aqueous solution or alkaline developer, and immiscible with the resist film so that the immersion lithography can be conducted in a satisfactory manner. During alkali development, development of the resist film and removal of the protective coating can be simultaneously achieved.

The invention discloses a lithium-ion secondary battery and an electrolyte thereof. The electrolyte comprises a solvent, lithium salt and a film forming additive, wherein the solvent comprises a first solvent and a second solvent; the first solvent comprises linear carboxylic ester and ethylene carbonate; the second solvent is one or more of ethyl methyl carbonate, diethyl carbonate, dimethyl carbonate and propylene carbonate; and the film forming additive is one or more of fluoroethylene carbonate, vinylene carbonate, 1,3-propane suhone, succinonitrile, adiponitrile, lithium bis(oxalato)borate, and lithium oxalyldifluoroborate. Due to the collocation of linear carboxylic ester and ethylene carbonate, a solvent system with a higher dielectric constant and low viscosity is obtained; the film forming additive improves poor compatibility between linear carboxylic ester and graphite; and finally the lithium-ion secondary battery adopting the electrolyte presents high-power discharge capacity, excellent high-temperature cycling stability and low-temperature charge and discharge properties.

A communications network system, comprising: a first user device, wherein the first user device uses a first communications protocol; a second user device, wherein the second user device uses a second communications protocol, different from the first communications protocol; and, a server, in operative communication with the first user device and the second user device, and wherein the server comprises a processor for translating the first communications protocol into the second communications protocol.

The invention relates to a high polymer-based graphene composite material with positive resistance temperature coefficient, and a preparation method of the material. The composite material comprises a base body and conductive filler; the content of conductive material is 0.01-10wt%; all components are mixed uniformly and are formed through mold-pressing or extrusion / injection molding; and the formed material is irradiated after being dried, so that the high polymer-based graphene composite material with positive resistance temperature coefficient can be obtained. Compared with the prior art, the graphene composite material and the preparation method have the advantages that the manufacturing process is simple, less influence is caused to the performance of base material, oxidation is unlikely to occur, the resistivity is more stable, the circulation stability of the material is better, and NTC (Negative Temperature Coefficient) effect is not generated easily.

Disclosed is a rare earth magnet in the R-T-B (rare earth element-transition metal-boron) system that is made from an improved composition and properties of main phase alloy in the R-T-B system containing Pr and a boundary alloy. Disclosed also is a manufacturing method of the rare earth magnet alloy flake by a strip casting method with improved rotating rollers such that the alloy flake has a specified fine surface roughness and has a small and regulated amount of fine R-rich phase regions. Consequently, the alloy flake for the rare earth magnet does not containing α-Fe and has a homogeneous morphology so that the rare earth magnet formed by sintering or bonding the alloy flakes exhibits excellent magnetic properties.

The invention relates to methods of enhancing repair of a cartilage and / or inducing formation of a cartilage by administering a cell which expresses a factor of the T-box family, which includes inter-alia the brachyury. In another embodiment, the invention relates to an engineered cell, which is transfected with a vector comprising a nucleic acid sequence encoding a factor of the T-box family, thereby expressing a factor of the T-box family. In another embodiment, the invention relates to compositions comprising a vector which comprises a nucleic acid sequence encoding a factor of the T-box family and in another embodiment the composition comprising cell which expresses a factor of the T-box family, which includes inter-alia the brachyury.

An apparatus provided is capable of performing injection molding of a high-melting point metal. The injection molding apparatus comprises a mold, a sleeve disposed so as to be movable forward and backward toward a pouring gate of the mold, a plunger slidably disposed in the sleeve, a heating means for heating and melting a raw material lump supplied into a raw material accommodating part formed by an inside wall of the sleeve and the plunger mentioned above, and a raw material lump supplying means for supplying the raw material lump to the above-mentioned raw material accommodating part from above. For the purpose of ensuring that a melt of a metal which has been heated and melted hardly flows into a gap between the plunger and the sleeve, the above-mentioned plunger and / or sleeve is equipped with a cooling means.

A transfer substrate includes a transfer material layer on a support substrate via a light absorbing layer. Antireflection patterns for preventing light reflection on an interface of the support substrate and the light absorbing layer are provided between the support substrate and the light absorbing layer. Thickness of this antireflection patterns is set to a value with which an absorptance of light having a predetermined wavelength absorbed in the light absorbing layer is maximized.

The present invention provides a method of manufacturing a trench with a rounded corner portion and a broadened opening. Anisotropic oxidation is carried out using a halogen oxidation method using dichloroethylene (DCE) to form an anisotropic oxide film such that the film thickness in a shoulder portion of the trench is thick and gradually decreases nearer the bottom, the anisotropic oxide film is removed, and the shoulder portion of the trench is preferentially backed off, thereby rounding the shoulder portion sufficiently to broaden the opening. Then, an insulating member is embedded in the trench. The rounded portion of the shoulder portion of the trench and vicinity thereof is used as a channel of a MOS transistor.

Devices and methods of use or treatment are disclosed for creating fibrosis and resulting in amenorrhea. In particular, the device relates to an easily deployed intrauterine implant that readily and consistently reduces or eliminates abnormal intrauterine bleeding. In addition, the device is also used as a uterine marker for visualizing endometrial tissue thickness and potential changes. The methods of the present invention serve as a supplement to or a replacement for conventional treatments and procedures used to treat menorrhagia.

The invention discloses a class II active center hydrogenation catalyst start-up vulcanization method, which comprises the following steps: (1) taking class II active center hydrogenation catalyst before vulcanization; (2) filling the class II active center hydrogenation catalyst before vulcanization into a reactor at normal temperature and pressure, introducing nitrogen to replace air in a reaction system, then replacing the nitrogen with hydrogen and carrying out gas seal; (3) continuing to adjust the temperature of a bed layer of the reactor, and introducing vulcanized oil to moisten the catalysts; (4) cycling the vulcanized oil in a closed mode in the reaction system, gradually injecting vulcanizers into the vulcanized oil, and raising the temperature continuously to complete vulcanization; and (5) adjusting the bed layer to the reaction temperature after vulcanization, and switching raw oil. The catalyst start-up vulcanization method disclosed by the invention is conductive to forming more class II hydrogenation active centers for the catalysts, and is conductive to improving the use performance of the catalysts.

Fully lipid-encapsulated therapeutic agent particles of a charged therapeutic agent are prepared by combining a lipid composition containing preformed lipid vesicles, a charged therapeutic agent, and a destabilizing agent to form a mixture of preformed vesicles and therapeutic agent in a destabilizing solvent. The destabilizing solvent is effective to destabilize the membrane of the preformed lipid vesicles without disrupting the vesicles. The resulting mixture is incubated for a period of time sufficient to allow the encapsulation of the therapeutic agent within the preformed lipid vesicles. The destabilizing agent is then removed to yield fully lipid-encapsulated therapeutic agent particles. The preformed lipid vesicles comprise a charged lipid which has a charge which is opposite to the charge of the charged therapeutic agent and a modified lipid having a steric barrier moiety for control of aggregation.

Implantable prosthesis, components of prosthesis, and methods of making same are provided. The methods generally include the steps of providing an implant shell, applying a curable fluid composition to the shell to form a coating thereon and applying a particulate component to the composition. The composition is a mixture, for example, an emulsion, containing a silicone-based elastomer dispersion and droplets of a suspended leachable agent. After the elastomer is stabilized and cured, the particulate component and leachable agent are removed, resulting in an implantable member having a porous, open-cell surface texture designed to be effective in reducing incidence of capsular formation or contraction.

To provide a process for forming a resist pattern, which the process can adopt even ArF excimer laser light as exposure light in a patterning step, can thicken a resist pattern (e.g., a hole pattern) regardless of its size, and can reduce the size of a resist space pattern with high precision while preventing changes in the resist pattern shape, to thereby make this process easy, inexpensive and efficient while exceeding the exposure (resolution) limits of light sources of exposure devices. The process of the present invention for forming a resist pattern includes: forming a resist pattern; applying over a surface of the resist pattern a resist pattern thickening material; heating the resist pattern thickening material to thicken the resist pattern followed by development; and heating the resist pattern which has been thickened.

A resist protective coating material is provided comprising a polymer having a partial structure of formula (1) wherein R0 is H, F, alkyl or alkylene, and R1 is fluorinated alkyl or alkylene. In a pattern-forming process, the material forms on a resist film a protective coating which is water-insoluble, dissolvable in alkaline developer and immiscible with the resist film, allowing for effective implementation of immersion lithography. During alkali development, development of the resist film and removal of the protective coating can be simultaneously achieved.

A display device including a thin film transistor with high electric characteristics and high reliability, and a method for manufacturing the display device in high yield are proposed. In a display device including a channel stop thin film transistor with an inverted-staggered structure, the channel stop thin film transistor with the inverted-staggered structure includes a microcrystalline semiconductor film including a channel formation region. An impurity region including an impurity element imparting one conductivity type is formed as selected in a region in the channel formation region of the microcrystalline semiconductor film which does not overlap with a source electrode or a drain electrode. In the channel formation region, a non-doped region, to which the impurity element imparting one conductivity type is not added, is formed between the impurity region, which is a doped region to which the impurity element is added, and the source region or the drain region.

The selective catalytic reduction of nitrogen oxides (especially NO and NO2) in exhaust from diesel and other lean burn engines is improved by use of a compact hyperplasma reactor for generating ozone and other highly oxidizing species in a stream of air. A portion of the ozone containing air stream is blown directly into the exhaust for oxidizing NO to NO2. The other portion of plasma treated air is used to fractionate and reform a volume of diesel fuel to produce low molecular weight hydrocarbons and oxidized hydrocarbons to be added to the exhaust as NO2 reductants in the catalytic reduction.

A method for forming interconnect wiring, includes: (i) covering a surface of a connection hole penetrating through interconnect dielectric layers formed on a substrate for interconnect wiring, with an underlying alloy layer selected from the group consisting of an alloy film containing ruthenium (Ru) and at least one other metal atom (M), a nitride film thereof, a carbide film thereof, and an nitride-carbide film thereof, and (ii) filling copper or a copper compound in the connection hole covered with the underlying layer.

A system includes a primary wellbore and a plurality of secondary wellbores. The primary wellbore includes a substantially vertical portion extending from a terranean surface to a predetermined location above a first target subterranean formation; a curved portion coupled to the substantially vertical portion and extending through the first target subterranean formation above a second target subterranean formation containing at least one of oil or gas; and a substantially horizontal portion coupled to the curved portion and extending through the first target subterranean formation and adjacent the second target subterranean formation. The plurality of secondary wellbores are coupled to the primary wellbore and extend angularly downward into the second target subterranean formation.

The invention discloses a start-up method for an ex-situ prevulcanization secondary activity center hydrogenation catalyst. After resistance to air loss of a device is qualified, circulating hydrogen compressor working load is adjusted to 0-20% of a maximum load, the catalyst reacts at a low temperature to release heat; when the bed layer temperature rise to 60-150 DEG C, start-up activation oil is introduced, the circulating hydrogen compressor working load is adjusted to 60-100% of the maximum load for wetting of the catalyst; the start-up activation oil is cycled in a reaction system closed path, the catalyst bed temperature is risen to 180 to 230 DEG C by heat exchange; a proper amount of olefin-enriched naphtha is added into the start-up activation oil, the catalyst bed temperature is risen to 300-380 DEG C to complete start-up activation. The start-up method, in the premise of no influence on the use properties of the secondary activity center hydrogenation catalyst, can better use the catalyst characteristics, reduce the device energy consumption, and reduce the device investment cost, and the start-up process can be simplified.

A display device including a thin film transistor with high electric characteristics and high reliability, and a method for manufacturing the display device in high yield are proposed. In a display device including a channel stop thin film transistor with an inverted-staggered structure, the channel stop thin film transistor with the inverted-staggered structure includes a microcrystalline semiconductor film including a channel formation region. An impurity region including an impurity element imparting one conductivity type is formed as selected in a region in the channel formation region of the microcrystalline semiconductor film which does not overlap with a source electrode or a drain electrode. In the channel formation region, a non-doped region, to which the impurity element imparting one conductivity type is not added, is formed between the impurity region, which is a doped region to which the impurity element is added, and the source region or the drain region.

The invention supplies a method used to produce orientation silicon steel by low temperature heating. It includes the following steps: heating the plate blank under 1280 degree centigrade; hot rolling; once or double cold rolling to gain finished product sheet thickness; nitriding treatment; decarburizing annealing; coating insulator; high temperature annealing. In the nitriding technology, heating area dew point is controlled at -15-40 degree centigrade. The invention has the advantages of high nitriding efficiency, no influence from the surface oxide film, excellent MgO coat formula which makes the magnesium silicate substrate have good magnetic property, ensure the implementation for the next hot leveling annealing and insulating coating.

The present invention provides methods and kits for isolating one strand of a double-stranded target nucleic acid. The method capitalizes on the differences in the kinetics and thermodynamic stabilities between conventional DNA / DNA, DNA / RNA and RNA / RNA duplexes and heteroduplexes in which one strand of the heteroduplexe is a nucleobase polymer having a net positively charged or net neutral backbone, such as a PNA.