The invention discloses a measuring method for the current carrier concentration in
solar energy level monocrystal
silicon. The measuring method includes the following steps that (1), a series of p-type electronic grade monocrystal
silicon and a series of n-type electronic grade monocrystal
silicon are respectively selected as
standard samples, the electrical resistivity and
infrared absorption coefficients of the
standard samples are respectively measured at the
room temperature, and the corresponding current carrier concentration is converted according to the electrical resistivity; (2), according to measurement results in the step (1), an alpha
lambda /
lambda<2> and rho p<2>
standard curve of the p-type monocrystal silicon and an alpha
lambda / lambda<2> and rho p<2>
standard curve of the n-type monocrystal silicon are respectively set up, wherein alpha lambda is the
infrared absorption coefficients of the
standard samples at the
wavelength of lambda, and p and rho are the corresponding current carrier concentration and the corresponding electrical resistivity; (3), the electric
conduction type of the
solar energy level monocrystal silicon samples to be detected is determined, the electrical resistivity and the
infrared absorption coefficients of the standard samples are respectively measured at the
room temperature, and the current carrier concentration is obtained according to the corresponding standard curves in the step (2). The measuring method is easy, convenient and fast to use, high in accuracy, low in test cost and particularly suitable for the
solar energy level monocrystal silicon, wherein the
compensation effect exists in a substrate of the solar
energy level monocrystal silicon.