The invention provides a method for producing
solar energy level polysilicon by taking
quartz sands with high purity as materials. In the method, silica materials, in which the SiO2 content is more than 99 percent, are chosen to undergo water
quenching, crushing, sieving, acid cleaning,
magnetic separation and
high voltage ionizing treatments, which makes the purity of silica particles reach more than 99.99 percent, and the
quartz sands with high purity are obtained; carbonaceous reducing agents and
graphite electrodes in a mine hot stove are chloridized at a high temperature in a chlorination furnace, making the purity of carbonaceous reducing agents reach more than 99.99 percent; in the mine hot stove, the carbonaceous reducing agents are used to reduce the
quartz sands with high purity so as to produce
silicon, and while producing,
silicon liquids are periodically discharged from the mine hot stove; the obtained
silicon liquids are injected in a holding furnace, and the products directly undergo the high-frequency
plasma air refining for
impurity removal under the non oxidizing
atmosphere, and at the same time oxidizing gases are added in the melting silicon; the silicon liquids are injected in a
directional solidification furnace for the
directional solidification, and the silicon is further purified, so that the
solar energy level polysilicon is obtained. The method of the invention has the advantages of low investment, short building period, low manufacturing cost, simple process and no
pollution; moreover, the method is also suitable for industrialization.