30 results about "Thin film soi" patented technology

Three-dimensional ESD structures are constructed in SOI technology that utilize both bulk devices and thin film SOI devices.

A silicide processing method for a thin film SOI device including depositing a metal or an alloy on a gate and a source / drain structure formed in a silicon-on-insulator film, reacting the metal or alloy at a first temperature with the silicon-on-insulator film to form a first alloy, etching the unreacted layer of the metal (or alloy) selectively, depositing a Si film on the first alloy, reacting the Si film at a second temperature to form a second alloy, and etching the unreacted layer of the Si film selectively.

In a FET having a thin-film SOI layer, to prevent a parasitic resistance increase in source / drain regions. To realize an elevated layer to be formed on the source / drain region without using a lithography process and without a fear of a short circuit. Element-isolation insulating films 7, which are taller than a semiconductor layer 3, are formed surrounding the island-shaped semiconductor layer (SOI layer) 3, while gate electrodes 5a, 8a which are taller than the element-isolation insulating films 7 are formed on the semiconductor layer 3. A polycrystalline silicon film 11 is deposited on the whole surface. elevated layers 11a, 11b which are shorter than the element-isolation insulating film 7 are formed on the source / drain regions 3a, 3b by chemical-mechanical polishing and etching back. Silicide layers 13a to 13c are formed on the gate electrode and on the elevated layers. An interlayer insulating film 14 is formed, and a metal electrode 16 is formed.

In order to obtain a method of evaluating a crystal defect which allows crystal defects generated in a thin film SOI layer or a thin film surface layer to be evaluated using an in-line test, an SOI layer 3 has silicide regions 8 formed in the evaluation region consequently upon generation of crystal defects generated in the SOI layer 3. The silicide regions 8 are regions silicided as a result of the crystal defects having gettered metals which are contained in a transition layer 10 and diffuse into the SOI layer 3 upon a heat treatment. A laser beam is irradiated to the evaluation region via the transition layer 10 and the silicon oxide film 6. By monitoring a current flowing between first and second probes using an ampere meter while scanning the evaluation region with a laser beam, it is possible to evaluate the crystal defects in the evaluation region.

Photonic devices monolithically integrated with CMOS are disclosed, including sub-100 nm CMOS, with active layers comprising acceleration regions, light emission and absorption layers, and optional energy filtering regions. Light emission or absorption is controlled by an applied voltage to deposited films on a pre-defined CMOS active area of a substrate, such as bulk Si, bulk Ge, Thick-Film SOI, Thin-Film SOI, Thin-Film GOI.

A process for producing an SOI substrate includes the steps of forming an oxide film on at least the front surface of a first silicon substrate, implanting hydrogen ion from the surface of the first silicon substrate and thereby forming an ion implantation area in the inside of the first silicon substrate, laminating a second silicon substrate onto the first silicon substrate via the oxide film and thereby forming a laminated body of the first silicon substrate and the second silicon substrate bonded with each other, and heating the laminated body at a predetermined temperature and thereby separating the first silicon substrate at the ion implantation area and thereby obtaining an SOI substrate wherein a thin film SOI layer is formed on the second silicon substrate via the oxide film. The first silicon substrate is formed by slicing an ingot free of an agglomerate of vacancy type point defects and an agglomerate of interstitial silicon type point defects grown by a CZ method in an inorganic atmosphere including hydrogen. The layer transferred wafer separated from the SOI layer is used again as the first silicon substrate.

The invention belongs to the semi-conductor power device technical field. A SOI layer of the device is thinner (1to 2um); a grid oxide layer is thick (100 to 800nm); a grid field plate gets across a grid and extends above a drift region. An active expansion region positioned below the thick grid oxide layer and connected with a source region can be also arranged in the body of the device to assure the more effective formation of the whole device. The grid oxide layer of the invention is thicker, can bear high grid-source voltage and meet the need of a level displacement circuit; the SIO layer is thinner, can decrease the parasitic effect of the device and reduce consumption; through adding the grid field plate striding over the grid on the surface of the power device, the depletion of the drift region can be increased, the electric field peak value on the silicon surface at the tail end of the grid is decreased, the breakdown characteristic of the device is improved, further more the concentration of the drift region is helped to improve, and the on-state resistance of the device is decreased. The invention has the advantages of low parasitic effect, fast speed, low power consumption, strong radiation-resistant ability and so on, and is compatible with the standard process. By adopting the invention, various high-voltage, high-speed and low conducting loss devices of excellent performance can be produced.

Provided is a method of manufacturing an SOI-based silicon-germanium heterojunction bipolar transistor (SiGe-HBT). In the method, the impurity injected in an outer base region (161) is changed from boron to boron fluoride, and the injection energy and amount are defined in specific ranges, thereby effectively solving the problems of significantly increased collector resistance and an apparently reduced maximum cut-off frequency Ft parameter for SiGe-HBT devices on a thin-film SOI. Also, compared with other methods of increasing an injection amount and a doping concentration in a collector region, the method avoids lowered voltage endurance of devices because of an increased doping concentration in a collector region. In addition, the manufacturing process is simple and is easy to implement.

A method of manufacturing a semiconductor device includes the steps of, (1) preparing an SOI substrate, (2) forming a metal layer on the SOI substrate, (3) performing a first anneal treatment to the metal layer at a relatively low temperature in order to transform the metal layer to a first silicide layer, (4) forming an insulating layer on the first silicide layer, and (5) forming a contact hole, which reaches the first silicide layer, in the insulating layer; and (6) performing a second anneal treatment to the silicide layer at a relatively high temperature in order to transform the first silicide layer to a second silicide layer.

A bottom of a gate trench has a first bottom relatively far from an STI and a second bottom relatively near from the STI. A portion, in an active region, configuring the second bottom of the gate trench configures a side-wall channel region, and has a thin-film SOI structure sandwiched between the gate electrode and the STI. On the other hand, a portion configuring the first bottom of the gate trench functions as a sub-channel region. A curvature radius of the second bottom is larger than a curvature radius of the first bottom. In an approximate center in a length direction of the gate trench, a bottom of a trench is approximately flat, and on the other hand, in ends of the length direction, a nearly whole bottom of the trench is curved.

A method of manufacturing an SOI-based SiGe-HBT transistor. A specific photomask (24) is added in a doping and injection process for an outer base region (181). The photomask has the same pattern as that of the mask (16) used in forming a base region window, so as to define the injection of the outer base region within a specified region, thereby solving the problems of increased collector resistance and a reduced maximum cut-off frequency Ft parameter for SiGe BJT devices on a thin-film SOI, and also avoiding the problem of lowered voltage endurance of devices because of an increased doping concentration in a collector region.

The invention discloses a method for removing silicon defects in the top layer of TM-SOI, belonging to the technical field of SOI preparation. The method is to chemically etch the SOI silicon wafer formed by TM-SOI to remove the damaged layer on the surface of the thin-film SOI silicon wafer. After repairing, high-quality SOI silicon wafers are obtained. The SOI prepared by this method can not only improve the surface roughness, but most importantly, can repair SOI defects, and prepare SOI materials with excellent electrical properties.

A method of manufacturing an MOS field effect transistor, which achieves a faster operation and lower power consumption by using a thin film SOI structure, is provided. The method of manufacturing an MOS field effect transistor to be formed on a semiconductor substrate having a channel layer on a buried oxide film, comprises the steps of forming: a gate electrode on the semiconductor substrate via a gate oxide film; forming a first sidewall which covers a side wall of the gate electrode; forming a box oxide film by etching the buried oxide film; and forming a second sidewall which covers a side wall of the box oxide film in such a way that the second sidewall extends downward along the side wall of the box oxide film.

Reliability of a semiconductor device is improved. A p-type MISFET of a thin film SOI type is formed in an SOI substrate including a semiconductor substrate, an insulating layer on the semiconductor substrate, and a semiconductor layer on the insulating layer, and n+-type semiconductor regions which are source and drain region of the p-type MISFET are formed in the semiconductor layer and an epitaxial layer on the semiconductor layer. A semiconductor layer is formed via the insulating layer below the p-type MISFET formed in the n-type well region of the semiconductor substrate. In an n-type tap region which is a power supply region of the n-type well region, a silicide layer is formed on a main surface of the n-type well region without interposing the epitaxial layer therebetween.

The embodiment of the invention discloses a preparation method for a power device structure, and the method comprises the steps: injecting phosphorus onto a thin film SOI wafer, carrying out high-temperature annealing, activating injected ions, and carrying out heavy doping of an n-type drift region from the surface of the device to the upper surface of a buried oxide layer; carrying out silicon etching till the buried oxide layer, forming a SiO2 dielectric layer window, carrying out SiO2 deposition, carrying out SiO2 etching till the surface of the buried oxide layer, forming a polycrystalline silicon window, and carrying out polycrystalline silicon deposition; carrying out phosphorus injection through a specially-customized photoetching plate, and then carrying out long-time high-temperature annealing; forming a drain electrode, a source electrode, a grid electrode, a gate-oxide, and a polysilicon gate, wherein the polysilicon gate is connected with a gate in the drift region; depositing field oxide SiO2 and metal, carrying out the etching of the metal, and forming source, drain and grid metal, thereby effectively improving the breakdown voltage of a device, and reducing the conduction resistance of the device.