40 results about "Proton radiation" patented technology

Methods of optimizing a laser-accelerated proton radiation dose to a targeted region are disclosed. Disclosed methods include providing a plurality of modulated polyenergetic proton beamlets and irradiating the targeted region with the plurality of modulated beamlets.

Methods of optimizing a laser-accelerated proton radiation dose to a targeted region are disclosed. Disclosed methods include providing a plurality of modulated polyenergetic proton beamlets and irradiating the targeted region with the plurality of modulated beamlets.

We describe the preparation and characterization of two zinc hybrid luminescent structures based on the flexible and emissive linker molecule, trans-(4-R,4′-R′) stilbene, where R and R′ are mono- or poly-coordinating groups, which retain their luminescence within these solid materials. For example, reaction of trans-4,4′-stilbenedicarboxylic acid and zinc nitrate in the solvent dimethylformamide (DMF) yielded a dense 2-D network featuring zinc in both octahedral and tetrahedral coordination environments connected by trans-stilbene links. Similar reaction in diethylformamide (DEF) at higher temperatures resulted in a porous, 3-D framework structure consisting of two interpenetrating cubic lattices, each featuring basic to zinc carboxylate vertices joined by trans-stilbene, analogous to the isoreticular MOF (IRMOF) series. We demonstrate that the optical properties of both embodiments correlate directly with the local ligand environments observed in the crystal structures. We further demonstrate that these materials produce high luminescent response to proton radiation and high radiation tolerance relative to prior scintillators. These features can be used to create sophisticated scintillating detection sensors.

A method for the production of a stop zone in a doped zone of a semiconductor body having a first side and a second side, comprises the following method steps: applying a mask having cutouts to one of the sides of the semiconductor body, irradiating the side having the mask with proton radiation, carrying out a heat treatment method in order to produce hydrogen-induced donors in the semiconductor body.

A donor layer that is formed by performing a heat treatment for a crystal defect formed by proton radiation is provided in an n-type drift layer of an n− semiconductor substrate. The donor layer has an impurity concentration distribution including a portion with the maximum impurity concentration and a portion with a concentration gradient in which the impurity concentration is reduce to the same impurity concentration as that of the n-type drift layer in a direction from the portion with the maximum impurity concentration to both surfaces of the n-type drift layer. The crystal defect formed in the n-type drift layer is a composite crystal defect mainly caused by a vacancy, oxygen, and hydrogen.

Methods of optimizing a laser-accelerated proton radiation dose to a targeted region are disclosed. Disclosed methods include providing a plurality of modulated polyenergetic proton beamlets and irradiating the targeted region with the plurality of modulated beamlets.

A method for monitoring a container or the contents in a volume (39, 47), including allowing at least one of a beta, gamma, neutron, and proton radiation emerging from said container or volume (39, 47), and / or secondary particles or radiation brought forth by said radiation, to pass through a measuring volume (12, 12′) of at least one radiation detector (10, 10′, 10″), said measuring volume (12, 12′) containing a noble gas and / or a noble gas isotope, or a mixture of noble gases and / or noble gas isotopes and detecting the photons generated within said measuring volume (12, 12′) by an interaction (18, W1, . . . , W4) of the radiation with the noble gas or noble gases and / or their isotopes of the measuring volume (12, 12′). The output of said photon detecting means (15, 16, 53) is then used to derive information about the container or the contents in said volume (39, 47), whereby this information is used to discriminate protons, neutrons, beta and gamma rays respectively.

A method for the production of a stop zone in a doped zone of a semiconductor body having a first side and a second side, comprises the following method steps:applying a mask having cutouts to one of the sides of the semiconductor body,irradiating the side having the mask with proton radiation,carrying out a heat treatment method in order to produce hydrogen-induced donors in the semiconductor body.

To overcome the difficulties inherent in conventional proton therapy systems, new techniques are described herein for synchronizing the application of proton radiation with the periodic movement of a target area. In an embodiment, a method is provided that combines multiple rescans of a spot scanning proton beam while monitoring the periodic motion of the target area, and aligning the applications of the proton beam with parameters of the periodic motion. For example, the direction(s) and frequency of the periodic motion may be monitored, and the timing, dose rate, and / or scanning direction and spot sequence of the beam can be adjusted to align with phases in the periodic motion.

The invention discloses a method for verifying a single particle soft error protection design based on a heavy ion accelerator, and relates to the field of heavy ion and proton equivalent test verification of system single particle protection effect verification based on accelerator test data. The method includes the following steps: (1) adopting a ground accelerator heavy ion test which is determined on the basis of a LET value; (2) analyzing a proton static overturning cross section; (3) analyzing a sensitive bit factor of the system under any working mode; (4) analyzing a dynamic overturning cross section of the system under heavy ion radiation; (5) analyzing a dynamic overturning cross section of the system under proton radiation. The invention provides a method for verifying a single particle soft error protection design based on the heavy ion accelerator. The method can be intended for verifying single particle protection effects, and address the problems of tight time of domestic accelerators and difficulty in realizing high energy proton tests.

A donor layer that is formed by performing a heat treatment for a crystal defect formed by proton radiation is provided in an n-type drift layer of an n− semiconductor substrate. The donor layer has an impurity concentration distribution including a portion with the maximum impurity concentration and a portion with a concentration gradient in which the impurity concentration is reduce to the same impurity concentration as that of the n-type drift layer in a direction from the portion with the maximum impurity concentration to both surfaces of the n-type drift layer. The crystal defect formed in the n-type drift layer is a composite crystal defect mainly caused by a vacancy, oxygen, and hydrogen.

The invention provides a polyethylene composite material for a doped carbon nanotube for space proton radiation protection as well as a preparation method and an application of the polyethylene composite material and relates to the field of composite materials for space proton radiation protection and the preparation method thereof. The invention aims to solve problems that the weight of an aluminum protective layer of a radiation protection material prepared from the traditional radiation protection material preparing method is large due to large density and the use range of the radiation protection material is poorer in thermal stability when a polyethylene material is used as the radiation protection material. The polyethylene composite material for the doped carbon nanotube for space proton radiation protection is prepared from a polyethylene resin, a carbon nanotube and a coupling agent in part by weight. The preparation method comprises the following steps: (1), mixing the carbon nanotube and the coupling agent to obtain a modified carbon nanotube; and (2), mixing the modified carbon nanotube and the polyethylene resin and hotly pressing the modified carbon nanotube and the polyethylene resin. The polyethylene composite material for the doped carbon nanotube for space proton radiation protection is applied to protection of proton radiation. The polyethylene composite material for the doped carbon nanotube for space proton radiation protection, provided by the invention, is suitable for the field of radiation protection and aerospace.

Provided is a protective concrete for weaken the intensity of proton radiation, and it is prepared by mixing 525# cement 500-700 Kg; barite sand 1000-1400 kg, barite stone 1500-1800 Kg, lead powder 180-200 Kg and water 170-180 Kg. The barite that can absorb the proton radiation is used, so the present concrete is much better than conventional concretes in weakening the proton radiation, and 1.5 m-thick wall without lead plates which is prepared with the present concrete can achieve the same effect on weakening the proton radiation with a conventional 2 m-thick wall covering with lead plates.

A particle beam transport system used for particle radiation therapy is provided. A beam of particles exiting from an accelerator is transported at fixed energy for treatment of patients in one or more treatment rooms using permanent magnets. In one embodiment, the system includes a series of fixed-magnetic-field permanent magnets as beam focusing elements that transport the beam at fixed energy to a point where the constant energy beam can be modified for use independently in different treatment rooms. In some embodiments, the particle beam may be deflected using dipole or Lambertson magnets manufactured using permanent magnetic material. The system may also incorporate a matching section imposed as the beam exits the accelerator. The matching system includes diagnostic elements and feedback systems that verify the beam properties as it exits the accelerator, and modify it, if necessary, until the beam attains a desired energy value.

The invention discloses a preparation method of a light emitting diode epitaxial wafer and a light emitting diode epitaxial wafer thereof, belonging to the field of semiconductor technology. A manufacture method comprises sequentially growing a buffer layer, an N-type semiconductor layer, an active layer, a P-type semiconductor lay and a contact layer on a substrate by a chemical vapor depositiontechnique; applying proton radiation to the surface of the contact layer to reduce the resistivity of the contact layer. The present invention provides a method for preparing a contact layer by protonirradiation on the surface of the contact layer, changing the microstructure of contact layer crystal, affecting the shape and number of defects in the contact layer and decreasing the resistivity ofthe contact layer can improve the carrier mobility of the contact layer, facilitate the hole migration of the P-type semiconductor layer into the active layer, increase the number of holes in the active layer, further increase the radiative recombination luminescence of the holes in the active layer, and finally improve the luminescence efficiency of the LED. Moreover, the resistivity of the contact layer is reduced, and the series resistance of the epitaxial wafer can be reduced, and finally the forward voltage of the LED can be reduced.

A telescope mirror having a mirror substrate, a multi-layer thin film reflective coating of alternating layers of high and low index of refraction dielectric films and a thin metal film positioned between the mirror substrate and the multi-layer thin film reflective coating. In preferred embodiments the telescope is a satellite surveillance telescope and the mirror is designed to protect the telescope from blinding by a nuclear blast or proton radiation in the lower Van Allen belt.

Embodiments of the present invention provide a rotational gantry designed to provide proton radiation therapy using a mono-energetic proton beam. The mono-energetic proton beam is transported by a beam line transport system having two or more bending magnets and a plurality of quadrupole and steerer magnets for directing and focusing the proton beam. Energy variation of the beam is performed directly before the beam reaches an isocenter of the gantry.

To overcome the difficulties inherent in conventional proton therapy systems, new techniques are described herein for synchronizing the application of proton radiation with the periodic movement of a target area. In an embodiment, a method is provided that combines multiple rescans of a spot scanning proton beam while monitoring the periodic motion of the target area, and aligning the applications of the proton beam with parameters of the periodic motion. For example, the direction(s) and frequency of the periodic motion may be monitored, and the timing, dose rate, and / or scanning direction and spot sequence of the beam can be adjusted to align with phases in the periodic motion

The invention relates to a detector, which is applicable to detecting the radiation intensity of a radiation source in the space and achieves quick and efficient detection for the radiation intensityof proton radiation, ionization radiation and neutron radiation. The radiation intensity detector based on flexible PIN diodes of the invention is characterized in that a detachable radiation detection array comprises a detection array control unit, a detachable radiation intensity detection array, a front-end preprocessing circuit, an A / D conversion circuit and a processor; the detachable radiation intensity detection array is formed by arranging numerous radiation intensity detection units in an ordered manner, each radiation intensity detection unit is composed of two flexible PIN diodes playing a role of detection, a TFT device playing a role of switching and a metal interconnecting line for data transmission; and the detection array outputs signals to the front-end preprocessing circuit, and then the signals are transmitted to the detection array control unit through the A / D conversion circuit to achieve judgment for the radiation intensity. The radiation intensity detector is mainly applied to radiation intensity detection.

The invention discloses a modified processing method for ramie fibers used for a textile article. The method comprises the following steps of: (1) preprocessing ramie fibers; (2) carrying out proton radiation processing; (3) carrying out dipping processing; (4) carrying out plasma processing; and (5) carrying out drying processing. The modified processing method disclosed by the invention carriesout modified processing on the ramie fibers by aiming at the problems of the ramie fibers, all steps are reasonably matched, the degree of crystallinity of modified ramie fibers is lowered, elongationat break and a breaking turnover number are obviously improved so as to improve the softness of the ramie fibers, the usability of the textile article is improved, and therefore, the modified processing method has good market competitiveness and a good market popularization and application value.

Systems and methods for enhancing the selective targeting of agents for preferential action at a target with reduced action with healthy tissue distal the target tissue. One or more agents can be combined with nano scale structures / particles for delivery to the target tissue. Appropriate bombardment with accelerated particle radiation, such as proton radiation, induces the release of the agents at the target site. Nano carriers can be combined with therapeutic and / or imaging enhancement agents. Imaging of the target tissue can provide a verification of the delivered dose of particle radiation. Nanocarriers can be provided with an outer shell selected for biocompatibility and durability in the in vivo environment and further selected to provide a feedback mechanism in the treatment environment to accelerate the release of the agent and reduce a total radiation dose needed for that release.

A software device that aids the user to evaluate the dose distribution for radiation therapy treatment plans. Radiation therapy treats a desired tumor volume as well as undesired volumes of critical anatomical structures within the patient. The dose volume histogram (DVH) is commonly used to assess the volume of tumor and the volumes of critical structures receiving certain doses. The disclosed invention overlays dose tolerance limits onto the DVH to conveniently and comprehensively enable the user to evaluate the quality of the radiation treatment plan.References Cited3871579Mar. 18, 1975Inamura3987281Oct. 19, 1976Hodes4845370July 4, 1989Thompson, et al.5012357Apr. 30, 1991Schoeppel, et al.5205289Apr. 27, 1993Hardy, et al.5339812Aug. 23, 1994Hardy, et al.5647663Jul. 15, 1997Holmes6167294Dec. 26, 2000Busch6222544Apr. 24, 2001Tarr, et al.6393096May 21, 2002Carol, et al.6741674May 25, 2004Lee7027557Apr. 11, 2006Llacer7186991Mar. 6, 2007Kato, et al.7362848Apr. 22, 2008Saracen, et al.7593505Sep. 22, 2009Saracen, et al.Shipley WU, Tepper JE, Prout GR, Verhey U, Mendiondo OA, Goitein M, Koehler AM, Suit HD. Proton radiation as boost therapy for localized prostatic carcinoma. J. Am. Med. Assoc. 1979 May; 241(18):1912-5.Austin-Seymour MM, Chen GT, Castro JR, Saunders WM, Pitluck S, Woodruff KH, Kessler M. Dose volume histogram analysis of liver radiation tolerance. Int J Radiat Oncol Biol Phys. 1986 Jan; 12(1):31-5.Mohan R, Brewster LJ, Barest GD. A technique for computing dose volume histograms for structure

The invention discloses a preparation method of a two-component functional filler composite coating layer for space high-energy proton radiation protection, and belongs to the technical field of functional material preparation. The problem that an existing shielding material cannot effectively shield radiation of space high-energy protons such as neutrons and gamma rays at the same time is solved. A rare earth metal oxide and a high-Z metal material are compounded through a ball milling process to form a core-shell structure, and then the composite particles and a resin matrix are compounded to prepare the anti-radiation coating layer. After the prepared core-shell structure composite particles are dispersed in the resin matrix, a multi-layer alternating structure of different materials can be formed on a microstructure, alternate penetration of rays in the material is achieved, the material has better space high-energy proton radiation protection capacity, and meanwhile the preparation technology of the multi-layer alternating material is simplified.

A radiation intensity detector based on multi-index SiGe HBT comprises the following units connected in series in order: a 38 decoder, a first socket providing a connection effect, a detachable radiation intensity detection array, a second socket providing a connection effect, a filter array and an A / D conversion circuit array and a FPGA chip; the FPGA chip signal input end is connected with a matrix keyboard; the FPGA chip output end is connected with a LCD and the 38 decoder input end; the detachable radiation intensity detection array comprises a plurality of detection units with the same structure; each detection unit input end is connected with the 38 decoder output end through the first socket; each detection unit output end is connected with the filter array input end through the second socket. The radiation intensity detector can fast and efficiently detect the proton radiation, ionising radiation and neutron radiation intensities, can be applied to the radiation sensitive workareas in the aviation spaceflight field and a nuclear power station, and can be applied to the daily production life.

Provided is a protective concrete for weaken the intensity of proton radiation, and it is prepared by mixing 525# cement 500-700 Kg; barite sand 1000-1400 kg, barite stone 1500-1800 Kg, lead powder 180-200 Kg and water 170-180 Kg. The barite that can absorb the proton radiation is used, so the present concrete is much better than conventional concretes in weakening the proton radiation, and 1.5 m-thick wall without lead plates which is prepared with the present concrete can achieve the same effect on weakening the proton radiation with a conventional 2 m-thick wall covering with lead plates.

The invention provides a multi-energy electron proton and solar radiation comprehensive environment simulation system. The multi-energy electron proton and solar radiation comprehensive environment simulation system comprises an electron radiation source, a proton radiation source, an ultraviolet radiation source, a solar simulator, a vacuum container, a sample table, a motion simulator and a flange interface. A sample on the sample table is located in one or more environments of electrons, protons, solar electromagnetic radiation, high temperature or low temperature, and a single-factor testor a comprehensive radiation test is carried out. Devices such as the electron source, the proton source, the ultraviolet radiation source and the solar simulator are utilized, the sample table is adjusted to make the sample subjected to the effects of electron radiation, proton radiation, ultraviolet radiation and solar electromagnetic radiation at the same time under the condition that other environmental conditions are not interrupted in one test, comprehensive simulation of the space environment on the ground is achieved, and a ground simulation environment can be provided for screening ofaerospace materials and devices in the future.

The invention relates to a real-time dynamic proton imaging and radiotherapy image imaging method. According to the method, the energy of proton rays is acquired by a thin film transistor (TFT) amorphous silicon flat panel detector with a cesium iodide coating and is subjected to digital-to-analog conversion to form an image. The method is characterized in that: the energy of the proton rays is acquired twice, one time is before the proton rays are transmitted into a detected object, and the other time is after the proton rays pass through the detected object; and data acquired through two-time acquisition is processed to form the image. The method has the characteristic that: by comparing a deviation value of the two-time acquired data, the influence of a phenomenon that the proton rays pass through the detected object and are scattered on imaging is reduced.

The invention discloses a preparation method of a light emitting diode epitaxial wafer and a light emitting diode epitaxial wafer thereof, belonging to the field of semiconductor technology. A manufacture method comprises sequentially growing a buffer layer, an N-type semiconductor layer, an active layer and an electron bloc layer on a substrate by a chemical vapor deposition technique; Carrying out proton radiation on the surface of the electron barrier layer to reduce the resistivity of the electron barrier layer; growing a P-type semiconductor layer on the electron barrier layer using a chemical vapor deposition technique. By performing proton radiation on the surface of the electron barrier layer, changing the microstructure of the electron blocking layer crystal, affecting the morphology and number of defects in the electron barrier layer, reducing the resistivity of the electron blocking layer, the method can improve the carrier mobility of the electron blocking layer, facilitatethe hole migration of the P-type semiconductor layer into the active layer, increase the number of holes in the active layer, further increase the radiation recombination luminescence of the holes inthe active layer, and ultimately improve the luminescence efficiency of the LED.

Embodiments of the present invention provide a rotational gantry 100 designed to provide proton radiation therapy using a mono-energetic proton beam. The mono- energetic proton beam is transported by a beam line transport system having two or more bending magnets 125 and a plurality of quadrupole and steerer magnets 110, 120 for directing and focusing the proton beam. Energy variation of the beam is performed directly before the beam reaches an isocenter of the gantry.