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A kind of preparation method of light-emitting diode epitaxial wafer and light-emitting diode epitaxial wafer

A technology of light-emitting diodes and epitaxial wafers, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of low luminous efficiency of LEDs

Active Publication Date: 2020-10-27
HC SEMITEK ZHEJIANG CO LTD
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Problems solved by technology

[0006] The embodiment of the present invention provides a method for preparing a light-emitting diode epitaxial wafer and the light-emitting diode epitaxial wafer, which can solve the problem of low luminous efficiency of the LED caused by the decrease in the number of holes in the active layer in the prior art

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  • A kind of preparation method of light-emitting diode epitaxial wafer and light-emitting diode epitaxial wafer
  • A kind of preparation method of light-emitting diode epitaxial wafer and light-emitting diode epitaxial wafer

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Embodiment Construction

[0026] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0027] The embodiment of the present invention provides a method for preparing a light-emitting diode epitaxial wafer, figure 1 For the flow chart of the preparation method of the light-emitting diode epitaxial wafer provided by the embodiment of the present invention, see figure 1 , the preparation method comprises:

[0028] Step 101: sequentially growing a buffer layer, an N-type semiconductor layer, an active layer and an electron blocking layer on the substrate by chemical vapor deposition technology.

[0029] Specifically, this step 101 may include:

[0030] Controlling the temperature to 400°C to 600°C (preferably 500°C), the pressure to 400torr to 600torr (preferably 500torr), and growing a buffer layer with a thickness of 15n...

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Abstract

The invention discloses a preparation method of a light emitting diode epitaxial wafer and a light emitting diode epitaxial wafer thereof, belonging to the field of semiconductor technology. A manufacture method comprises sequentially growing a buffer layer, an N-type semiconductor layer, an active layer and an electron bloc layer on a substrate by a chemical vapor deposition technique; Carrying out proton radiation on the surface of the electron barrier layer to reduce the resistivity of the electron barrier layer; growing a P-type semiconductor layer on the electron barrier layer using a chemical vapor deposition technique. By performing proton radiation on the surface of the electron barrier layer, changing the microstructure of the electron blocking layer crystal, affecting the morphology and number of defects in the electron barrier layer, reducing the resistivity of the electron blocking layer, the method can improve the carrier mobility of the electron blocking layer, facilitatethe hole migration of the P-type semiconductor layer into the active layer, increase the number of holes in the active layer, further increase the radiation recombination luminescence of the holes inthe active layer, and ultimately improve the luminescence efficiency of the LED.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for preparing a light-emitting diode epitaxial wafer and the light-emitting diode epitaxial wafer. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. LED has attracted wide attention due to its advantages of energy saving, environmental protection, high reliability, and long service life. For civil lighting, luminous efficiency and service life are the main criteria, so increasing the luminous efficiency of LEDs and improving the antistatic ability of LEDs is particularly critical for the wide application of LEDs. [0003] Epitaxial wafers are the primary products in the LED manufacturing process. The existing LED epitaxial wafer includes a substrate, a buffer layer, an N-type semiconductor layer, an active layer and a P-type semiconductor layer, a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/14
CPCH01L33/007H01L33/14
Inventor 王群郭炳磊李鹏董彬忠王江波
Owner HC SEMITEK ZHEJIANG CO LTD
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