The invention discloses a Motto
transistor and a fabrication method thereof. The method comprises the following steps of fabricating a grid on the surface of a substrate by a
coating technique, and sequentially fabricating a grid
dielectric layer and a channel layer on the surface of the grid; and fabricating a source and a drain on the surface, which is not covered by the channel layer, of the grid
dielectric layer, and completing the fabrication of the Mott
transistor with a bottom gird structure; or sequentially fabricating the channel layer and the grid
dielectric layer on the surface of the substrate by the
coating technique, fabricating the source and the drain on the surface, which is not covered by the grid
dielectric layer, of the channel layer, fabricating the grid on the surface of the grid
dielectric layer, and completing the fabrication of the Mott
transistor with a top grid structure, wherein the channel layer is a Mott insulation body thin film, and the grid
dielectric layer is a
solid-state
oxide proton conductor film. By the method, the full-
solid-
state structure of the Mott transistor is achieved, thus, the problems of liquid leakage and poor
thermal stability are prevented when the fabricated Mott transistor is in Mott conversion, and finally, the problem of relatively poor stability of a traditional Mott transistor is effectively solved.