Mott transistor and fabrication method thereof

Abstract

The invention discloses a Motto transistor and a fabrication method thereof. The method comprises the following steps of fabricating a grid on the surface of a substrate by a coating technique, and sequentially fabricating a grid dielectric layer and a channel layer on the surface of the grid; and fabricating a source and a drain on the surface, which is not covered by the channel layer, of the grid dielectric layer, and completing the fabrication of the Mott transistor with a bottom gird structure; or sequentially fabricating the channel layer and the grid dielectric layer on the surface of the substrate by the coating technique, fabricating the source and the drain on the surface, which is not covered by the grid dielectric layer, of the channel layer, fabricating the grid on the surface of the grid dielectric layer, and completing the fabrication of the Mott transistor with a top grid structure, wherein the channel layer is a Mott insulation body thin film, and the grid dielectric layer is a solid-state oxide proton conductor film. By the method, the full-solid-state structure of the Mott transistor is achieved, thus, the problems of liquid leakage and poor thermal stability are prevented when the fabricated Mott transistor is in Mott conversion, and finally, the problem of relatively poor stability of a traditional Mott transistor is effectively solved.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a Mott transistor and a preparation method. Background technique [0002] Mott insulator is an insulator with strong electron correlation effect, which can cause metal-insulator Mott transition of Mott insulator through heat, light and electric field, which makes Mott insulator can be applied to window coating, new Solid-state memory, metamaterials, Mott field-effect transistors and other fields. At present, Mott transistors prepared using Mott insulators usually use vanadium dioxide (VO 2 ) as the channel layer of the transistor, and the ionic liquid as the gate dielectric layer of the transistor, the metal-insulator Mott transformation of vanadium dioxide occurs at a relatively high temperature through electrostatic regulation. However, when ionic liquid is used as the gate dielectric layer of the Mott transistor, the stability of the Mott transistor is poor due...

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Problems solved by technology

[0003] Based on this, it is necessary to provide a Mott transistor and its preparation method for the traditional use of ionic liquid as the gate dielectric layer of the Mott transistor, which has liquid leakage and poor thermal stability, resulting in poor stability of the Mott transistor.

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