66 results about "Low energy laser" patented technology

Methodology for using laser machining techniques to modify a tissue for use in a medical device. In a representative mode of practice, relatively low energy laser machining is used to thin down at least a portion of a valved jugular vein. The thinned down vein may then be sutured to, or otherwise integrated with, a corresponding stent to make a percutaneous heart valve.

An EUV radiation source that employs a low energy laser pre-pulse and a high energy laser main pulse. The pre-pulse generates a weak plasma in the target area that improves laser absorption of the main laser pulse to improve EUV radiation emissions. High energy ion flux is reduced by collisions in the localized target vapor cloud generated by the pre-pulse. Also, the low energy pre-pulse arrives at the target area 20–200 ns before the main pulse for maximum output intensity. The timing between the pre-pulse and the main pulse can be reduced below 160 ns to provide a lower intensity of the EUV radiation. In one embodiment, the pre-pulse is split from the main pulse by a suitable beam splitter having the proper beam intensity ratio, and the main pulse is delayed to arrive at the target area after the pre-pulse.

Methodology for using laser machining techniques to modify a tissue for use in a medical device. In a representative mode of practice, relatively low energy laser machining is used to thin down at least a portion of a valved jugular vein. The thinned down vein may then be sutured to, or otherwise integrated with, a corresponding stent to make a percutaneous heart valve.

The present invention includes systems and compositions of holographic grating structures devices and methods for fabricating such holographic grating structures. The method comprises the steps of preparing a composite mixture comprising a polymerizable matrix, a liquid crystal, and a photo-oxidant dye, producing an interference pattern from two interference beams, wherein the two interference beams originate from a recording laser beam directed by a low energy laser, and projecting the interference pattern on the composite mixture to form a holographic grating structure. As described, the holographic grating structure yields a first-order diffraction efficiency of at least about 30% diffraction efficiency which may be adjusted by the application of an electric field.

The invention discloses a preparation method of cobaltosic-oxide nitrogen-doped graphene synthesized by laser and with adjustable oxygen vacancies. The preparation method comprises the following stepsof: using oxidized graphene to ultrasonically disperse in absolute ethyl alcohol, preparing into 0.33mg / ml suspension, taking 24ml suspension, adding 1.2ml 0.2M cobaltous acetate solution, 0.5ml NH4OH solution with the concentration of 30% and 0.7ml deionized water, and carrying out oil bathing for 10 hours at a temperature of 80 DEG C; pouring the solution into a reaction kettle, and reacting for 3 hours at a temperature of 150 DEG C; then carrying out high-speed centrifugation at a speed of 12000-20000r / m, then repeatedly cleaning for 3-4 times by using the deionized water, obtaining precipitates and carrying out freezing and drying; mixing a sample and the deionized water into a test tube according to the mass ratio of 1:2-1:5, and under magnetic stirring, using 15-97mJ energy of nanosecond parallel pulse laser to irradiate the solution for 5-25 minutes; carrying out centrifuging, freezing and drying to obtain the cobaltosic-oxide nitrogen-doped graphene with the adjustable oxygenvacancy. The preparation method disclosed by the invention has the beneficial effects that by adjustment for the irradiation energy and time of low-energy laser, the concentration of the oxygen vacancies in the composite system is adjusted and the unchanged structure of the composite system is maintained.

A method and apparatus for destroying cancerous cells or tumors includes placing fiber needles into the human body adjacent cancerous cells or tumors that have been biologically stained and exposing the cells or tumors to low-energy laser energy light emitted through the fiber needles so that the laser energy destroys the cancer cells or tumors through carbonization and / or vaporization without destruction of surrounding healthy tissue. The stain is specifically selected to have an absorption efficiency of greater than 90% for energy emitted by a given laser such that it greatly enhances absorption of the laser energy over surrounding unstained tissue. Appropriate stain and laser selection can allow treatment through an intact column of living tissue as laser energy to which living tissue is transparent may be used in combination with a stain that makes targeted tissue opaque to that energy.

The invention provides a substrate repairing device and a repairing method. The device comprises a laser emitter and an imaging unit. Being located on one side of a substrate, and with a preset height from the surface of the substrate, the laser emitter emits a first laser which is in parallel with the surface of the substrate and is used for detecting protruded defects of the substrate, and emits a second laser which is used for repairing the protruded defects requiring repair. The imaging unit is used for imaging the substrate; when it is detected that the first laser is scattered by certain protruded defects, the protruded defects are judged to be the protruded defects requiring the repair. By using the low-energy laser to detect the protruded defects and using the high-energy laser to repair the protruded defects, the substrate repairing device can efficiently repair the protruded defects of the substrate.

A process is described to form a semiconductor device such as MOSFET or CMOS with shallow junctions in the source / drain extension regions. After forming the shallow trench isolations and the gate stack, sidewall dielectric spacers are removed. A pre-amorphizing implant (PAI) is performed with Ge+ or Si+ ions to form a thin PAI layer on the surface of the silicon regions adjacent to the gate stack. B+ ion implantation is then performed to form source / drain extension (SDE) regions. The B+ implant step is then followed by multiple-pulsed 248 nm KrF excimer laser anneal with pulse duration of 23 ns. This step is to reduce the sheet resistance of the junction through the activation of the boron dopant in the SDE junctions. Laser anneal is then followed by rapid thermal anneal (RTA) to repair the residual damage and also to induce out-diffusion of the boron to yield shallower junctions than the just-implanted junctions prior to RTA.

An organic light emitting diode (OLED) display and thin film transistor (TFT) manufacturing method thereof are disclosed. According to the present invention, poly-silicon layers for forming active areas of non-driving TFT (e.g. peripheral circuit TFT and switch TFT) and driving TFT used in the OLED display are respectively made by using standard laser crystallization method and non-laser crystallization method or low energy laser crystallization method. Therefore, the peripheral circuit TFT has excellent electrical performance such as high carrier mobility, while the OLED-driving TFT has goodstability so that the resultant display can operate with improved luminance uniformity.

The invention discloses a method for modifying a mechanical surface of a sintered nd-fe-b magnet based on plastic constraint, and relates to surface modification technologies of permanent magnet materials. The method mainly comprises the steps that 1) the surface, to be processed, of the sintered nd-fe-b magnet is pretreated; 2) an absorption layer and a restraint layer are arranged on the surface, to be processed, of the sintered nd-fe-b magnet; 3) the unprocessed surface of the sintered nd-fe-b magnet is covered with plastic tough metal; 4) low-energy laser shock treatment is carried out on the covered surface, to be processed, of the sintered nd-fe-b magnet; 5) laser surface heat treatment is carried out on the cleaned surface of the sintered nd-fe-b magnet after the shock treatment; 6) the steps 2)-5) are repeated, the low-energy laser shock treatment and the laser surface heat treatment are carried out many times, and the sintered nd-fe-b magnet with the modified surface is obtained. The surface crystalline grains of the sintered nd-fe-b magnet can be effectively refined, surface layer grain boundary rich neodymium phase distribution can be homogenized, and the corrosion resisting performance of the sintered nd-fe-b magnet can be improved obviously. The method is simple in process, easy to operate, and suitable for large-scale and mass production.

The invention provides a preparation method for a perpendicular LED chip structure. The preparation method comprises the steps of 1) providing a growth substrate, and forming an epitaxial layer on the growth substrate; 2) forming a metal electrode layer and a bonding substrate on the epitaxial layer in sequence; and 3) peeling off the growth substrate by low-energy laser, wherein the overlapping ratio of adjacent two small light spots is greater than 50%. The invention also provides the perpendicular LED chip structure, wherein the perpendicular LED chip structure comprises the bonding substrate, and the metal electrode layer, a P-GaN layer, a multi-quantum-well layer and an N-GaN layer which are positioned on the bonding substrate in sequence, and a passivation layer and an N electrode which are positioned on the surface of the N-GaN layer in sequence. By adoption of the preparation method, the problem of cracking or severe deformation of the bonding substrate easily caused by high wafer stress after bonding in the perpendicular process of the large-dimensional LED chip is solved; and meanwhile, the problems of severe electric leakage and extremely low rate of finished products directly caused by severe microcosmic influence of the epitaxial layer structure and the performance are also solved.