98results about How to "Small absorption coefficient" patented technology

A device for automatic, static continuous preparation of a fiber bragg grating array comprises an optical fiber paying-off module, a coating layer stripping module, an optical grating inscribing module, a coating module and a fiber winding module, wherein the optical fiber paying-off module, the coating layer stripping module, the optical grating inscribing module, the coating module and the fiber winding module are sequentially arranged in the optical fiber running direction. The optical fiber paying-off module comprises a coiling drum. The coating layer stripping module comprises a CO2 pulse laser, a first reflector, a second reflector, a focusing lens and a cylindrical surface reflector arranged in sequence. The optical grating inscribing module comprises an excimer laser and a phase mask plate. The coating module comprises an automatic ultraviolet light coating device. The fiber winding module comprises an automatic fiber winding device. A method for automatic, static continuous preparation of the fiber bragg grating array aims at non-hydrogen-loaded common fibers, and in the optical fiber paying-off and winding process, the method includes the first step of partially stripping coating layers of fibers through narrow-pulse infrared light, the second step of moving optical fiber portions of the stripped coating layers to the excimer laser for inscribing, the third step of moving the optical fiber portions after being inscribed to the ultraviolet light coating device for ultraviolet light coating and curing, and the fourth step of repeating the first step to the third step to carry out inscribing on multiple fiber bragg gratings to form the fiber bragg grating array.

The invention provides a method for distinguishing variety of fritillaria and detecting total alkaloid content of the fritillaria by virtue of near infrared spectrum. The method provided by the invention comprises the following steps: (1) collecting a fritillaria sample; (2) measuring the near infrared diffuse reflection spectrogram of the fritillaria sample, preprocessing the 4000-5000cm<-1> wave band in the spectrogram, and performing cluster analysis on the pre-processed near infrared spectrogram to build a qualitative model; or preprocessing the 4000-7000cm<-1> wave band in the spectrogram, so as to obtain an absorbance, associating the absorbance with the alkaloid content of the sample measured by virtue of bromothymol blue colorimetry, and building a quantitative correction model for detecting alkaloid by one or more methods of a partial least squares method, a principal component regression method and a multiple linear regression method; (3) collecting the near infrared spectrogram of the sample to be measured, after the corresponding preprocessing is performed, distinguishing the variety of the fritillaria and detecting total alkaloid content of the fritillaria by utilizing the built qualitative model or quantitative correction model. The method provided by the invention has the characteristics of fast speed, no damage, environment friendliness and low cost.

The invention relates to a capping layer arranged on a cathode of an OLED display panel. A material of the capping layer comprises N-contained compound with a structure shown in a formula (I). According to the capping layer, small organic molecules applicable to an evaporation mode are used as the capping layer, and the practical feasibility is achieved. The molecules of the material of the capping layer are symmetrical molecule structures which are beneficial for regular arrangement of the molecules; the film formation stability and optical performance can be improved; moreover, through adoption of triamine derivatives containing carbazoles-benzo conjugated structures, a general absorption area of the material is in an ultraviolet wave band, and an absorption coefficient for visible light is small. The refractive indexes of the material of the capping layer are gradually reduced in a wavelength range of 430-650nm, difference values between high wavebands and low wavebands are small, namely the refractive index change for R / G / B colors is low, the light emergent efficiency influence deviation for the R / G / B is reduced, and the practicability on the panel is achieved.

To provide a dual-layer recordable optical recording medium, including: a first information layer; intermediate layer disposed over the first information layer; and second information layer disposed over the intermediate layer, the first information layer, intermediate layer, and second information layer being sequentially deposited from a laser irradiation side, wherein the first information layer comprises, from the laser irradiation side, at least a thin film containing Bi as a main ingredient, dielectric layer, reflective layer and thermal diffusion layer, and the second information layer comprises, from the laser irradiation side, at least a thin film containing Bi as a main ingredient, dielectric layer and reflective layer, and wherein the ratio of the thickness of the dielectric layer of the second information layer (t2) to the thickness of the dielectric layer of the first information layer (t1), t2 / t1, is in a range of 0.7 to 1.5 or 4.5 to 6.0.

The invention consists of a substrate, an ohmic contact layer, an active layer, a cover layer, an ohmic electrode and two Schottky electrodes. The ohmic contact layer is made on the substrate. The active layer is made on ohmic layer, and has less area than ohmic contact layer. The cover layer is made on active layer. The ohmic electrode is made on the ohmic contact layer. The two Schottky electrodes are made on the cover layer.

The present invention discloses a manufacturing method of the shallow isolating trough. In this method some SiON layers with a specific thickness and the different absorptive coefficients are deposited on a silicon nitride film, which comprises the following steps: ( a ) depositing a silicon oxide / silicon nitride pad film as an etching mask on a silicon substrate; (b) depositing a SiON layer with the high absorption coefficient on the silicon nitride layer first and then a SiON layer with the low absorption coefficient as an anti-reflective layer; (c) performing the photolithography with a photomask of the shallow trough and developing the exposed photoresist to form the etching mask of the shallow trough; (d) etching the SiON, the silicon nitride, the silicon oxide pad layer and the silicon substrate to form the shallow trough; (e) growing a silicon oxide layer on the side wall and bottom of the shallow trough to remove the damage and reduce the electric leakage; (f) depositing a silicon oxide layer in the shallow trough and on the SiON to fill up the trough; (g) flatting the surface by abrading chemically and mechanically.

The invention provides an end-pumped high-power laser which comprises a pumping source, a gain medium and a laser resonant cavity, wherein a gradient doped crystal is served as the gain medium, and the doping concentration of the crystal is lowest at the pumping end surface of the gain medium; the doping concentration of the crystal is higher and higher as the position of the crystal in the gain medium is far away from the pumping end surface; and the doping concentration is highest at the non-pumping end surface of the gain medium. The end-pumped high-power laser of the invention adopts the gradient doped crystal as the gain medium and has good light beam quality, high light-light conversion efficiency and compact structure.

This invention discloses a double-layer solar energy battery and its manufacturing method, in which, the structure of which includes a substrate-a Ag electrode layer, a metal oxide transparent conduction layer / type-n micro-crystal silicon-type-I non-crystal (12)-p-micro-crystal silicon (13) / ITO transparent conduction layer, the I layer in the bottom layer p-i-n junction is formed by micro-crystal silicon to avoid decline of photoelectric performance due to the long time illumination and layer-I in the p-i-n junction at the top is plated with non-crystal silicon to strengthen the spectrum absorption.

The invention discloses a preparation method of zinc selenide with high optical quality, which belongs to the technical field of inorganic block body material preparation. The method comprises the following steps: putting zinc into a deposition furnace; pumping the vacuum; raising the temperature in a deposition chamber; using argon as carrying gas of reaction raw material gas; introducing H2Se gas and the argon into the deposition chamber through a mass flowmeter (the mol ratio of zinc to H2Se is between 0.8 and 1.2, the deposition reaction is carried out on the inner wall of the deposition chamber, and the zinc selenide begins to grow); maintaining the unchanged mol ratio of zinc to H2Se and the constant pressure in the furnace; carrying out deposition for 15 to 25 days; and then, lowering the temperature to the room temperature to obtain the zinc selenide with high optical quality. The invention effectively solves the problem of powder generation in the process of preparing the zinc selenide through chemical vapor deposition, the impurities mixed in products are eliminated, the materials have high infrared transmission rate and low absorption factor, and the optical quality is greatly improved.

The invention relates to a preparation method of an ultraviolet fluorescent-green plastic film by taking rare-earth phosphate glass as a photochromic agent and application thereof in anti-counterfeiting aspects. Aiming at the problems of doped rare-earth fluorescent polymer materials, such as large polarity difference between an inorganic rare-earth fluorescent agent and a polymer material, rare-earth fluorescent concentration quenching, fluorescence stability and the like, the ultraviolet fluorescent-green plastic film has the characteristics that the phosphate glass is used as the substrate, Tb<3+> ion is used as a fluorescent activator, and Ce<3+> ion is used as a sensitizing agent, so that the fluorescent concentration quenching phenomenon is overcome, and the Eu addition amount and the fluorescence efficiency are increased through the synergistic effect of the phosphate glass matrix, Tb<3+> and Ce<3+> in the formula; glass fragments are pressed by using a melting method and an ice water mixture cooled glass tablet press, and then, the phosphate glass:Tb<3+>, Ce<3+> fluorescent powder with the granularity of being less than 300 nm is prepared through high-pressure grinding of an air-current mill; a surface modifier is added, fluorescent powder and polymer master-batch are molten and blended, and the plastic film obtained by being blown is white and transparent in the sun and emits beautiful green light under irradiation of ultraviolet light; and the plastic film has special transmission spectrum and can be used as an anti-counterfeiting packaging film, an anti-counterfeiting label printing substrate and an anti-counterfeiting safety line substrate.

A GaN crystal substrate is provided, which has a diameter of not less than 20 mm and a thickness of not less than 70 μm and not more than 450 μm, and has a light absorption coefficient of not less than 7 cm−1 and not more than 68 cm−1 for light in the wavelength range of not less than 375 nm and not more than 500 nm. A fabricating method of the GaN crystal substrate, and a light-emitting device fabricated using the GaN crystal substrate are also provided.

The invention relates to a preparation method of a KTP (KTiOPO4) crystal capable of effectively resisting a gray track. The preparation method comprises the following steps: 1) using a top seed crystal and a drawing method, slowly cooling and slightly raising drawing speed; 2) increasing the melt concentration and raising the growth temperature; 3) increasing the solvent composition; 4) using a seed crystal in the [100] direction and a single growth area; and 5) adding PbO, controlling the initial growth temperature at not more than 1007 DEG C, cooling to 78 DEG C at a cooling rate of 0.5-3 DEG C / day for 45 days, and controlling the drawing speed at 0.1-0.9 mm / day and positive and negative rotation speed at 60-20 rpm. In the invention, the top seed crystal and the drawing method are utilized to prepare the KTP crystal, thus the absorption coefficient of the KTP crystal is reduced, and the KTP crystal can effectively resist the generation of a gray track, so that the frequency-doubling conversion efficiency of the KTP crystal is enhanced.

The invention discloses an LED light source used for aquiculture. A preparation method of the LED light source includes the following steps that firstly, green fluorescent powder (or mixed fluorescent powder containing the green powder) and resin mixing phosphor are mixed to form a uniform powder syrup, the power syrup is then applied to a structure provided with a blue light LED chip, the light intensity and the light cycle are adjusted and controlled through a PWM, and based on the blue light LED chip, a new device used for outputting light required by aquiculture is obtained. According to the LED light source used for aquiculture, by changing the components of the fluorescent powder and the matching ratio of the fluorescent powder and the resin mixing phosphor or regulating the duty cycle of PWM pulse, and therefore the light intensity, the spectrum (chroma) and the proportion of blue light and green light are changed. The LED light source used for aquiculture has the advantages of being low in cost, simple in structure and convenient in light source proportion and light cycle regulation, and has the very good application prospect in the field of aquaculture.

The invention discloses a method for preparing a KTP crystal capable of resisting gray track, comprising the following steps that: 1) KH2PO4 and TiO2 as raw materials used to synthesize a KTiOPO4 crystal, and K2HPO4 as the raw material used to synthesize a K4P2O7(K4) solvent are mixed according to a certain ratio, and the initial growth mol ratio of the KTiOPO4 to the K4P2O7 obtained after the chemical reaction is about 0.8; 2) the mixed raw materials are put in a platinum crucible and the solution filling amount is between 75 and 85 percent; 3) the platinum crucible is put in a furnace body, a temperature gradient of the furnace is set to be between 3 and 8 DEG C per 10 centimeters, and the furnace is heated so that the raw materials are melted and react to form an even and stable high temperature solution; and 4) the seed crystal is put in the high temperature solution, the temperature is reduced at a temperature gradient of between 1 and 8 DEG C per 100 hours, and the KTiOPO4 crystal is grown at a temperature interval of between 850 and 820 DEG C. The method utilizes the K4P2O7 solvent to prepare the KTP crystal, reduces the absorption coefficient of the KTP crystal, and has evident anti-gray track performance; therefore, the frequency multiplication conversion efficiency of the KTP is improved further, the KTP crystal has good voltage withstanding and modulation performances and can be used as an electrooptical crystal.

The invention discloses an organic electroluminescent device, which relates to the technical field of organic electroluminescent display. The organic electroluminescent device including the anode, anorganic layer, a cathode and a light extraction layer; the organic layer is located between the anode and the cathode, the organic layer includes a light emitting layer, The light extraction layer islocated on a side of the cathode away from the anode, the light extraction layer sequentially comprising a first light extraction layer and a second light extraction layer from a side close to the cathode, the first light extraction layer containing a compound represented by Formula I, and the second light extraction layer containing a compound represented by Formula II. The organic electroluminescent device of the invention not only improves the transmittance of the cathode surface, but also greatly reduces the influence of the surface plasma effect and the waveguide effect, and improves thelight-emitting efficiency of the organic electroluminescent device because of the low light absorption coefficient and the high refractive index of the materials used in the first light-emitting layerand the second light-emitting layer.

The invention provides a solar cell and a preparation method thereof, the solar cell comprises a semiconductor substrate, a metal electrode, and a tunneling layer, a doped polycrystalline silicon layer and an antireflection layer which are sequentially stacked on the surface of one side of the semiconductor substrate, the doped polycrystalline silicon layer is provided with a first part and a second part, the doping concentration of the first part is greater than that of the second part, and the metal electrode penetrates through the antireflection layer and is in contact with the first part. The preparation of the doped polycrystalline silicon layer is simpler, the first part with higher doping concentration is obtained through local doping, and the interface recombination and contact resistance at the position of a metal electrode are effectively reduced; and due to the fact that the doping concentration of the second part is low, the non-electrode area is passivated, and meanwhile light absorption is reduced.

The invention discloses an organic electroluminescent device, which relates to the technical field of organic electroluminescent display. The organic electroluminescent device including an anode, an organic layer, a cathode and a light extraction layer, the organic layer is located between the anode and the cathode. The light extraction layer is located on a side of the cathode away from the anode, the light extraction layer sequentially comprising a first light extraction layer and a second light extraction layer from a side close to the cathode, the first light extraction layer containing acompound represented by Structural Formula Ia, and the second light extraction layer containing a compound represented by Structural Formula I. The organic electroluminescent device of the invention not only improves the transmittance of the cathode surface, but also greatly reduces the influence of the surface plasma effect and the waveguide effect, and improves the light-emitting efficiency of the organic electroluminescent device because of the low light absorption coefficient and the high refractive index of the materials used in the first light-emitting layer and the second light-emittinglayer.

The invention discloses a making method of HfON protective film for optical element, which is characterized by the following: adopting metal Hf target to react in the composite atmosphere of Ar, N2 and O2 through magnetic control sputtering; improving the mechanic strength, hardness, abrasion and transmission rate; fitting for anti-wet protective film and abrasion-proof film.

The invention discloses a synthesis method for a selenium germanium gallium barium polycrystal and a growth method for a selenium germanium gallium barium monocrystal. The growth of the polycrystal comprises the following steps: putting elemental Ga, elemental Ba and elemental Ge into a PBN boat; then placing the PBN boat at one end of a quartz tube and placing elemental Se at the other end of thequartz tube; conducting vacuumizing, and then carrying out heat sealing; and then putting the quartz tube into a horizontal double-temperature-region resistor furnace for synthesizing, so as to obtain a high-purity single-phase selenium germanium gallium barium polycrystal raw material, wherein the yield of the raw material is greater than 99%. The growth of the selenium germanium gallium bariummonocrystal comprises the following steps: adding the selenium germanium gallium barium polycrystal into a crystal growth crucible and vertically placing the crystal growth crucible into a quartz tube; conducting vacuumizing, and then carrying out heat sealing; and then putting the quartz tube into a vertical double-temperature-region resistor furnace, so as to obtain the selenium germanium gallium barium monocrystal after the growth of the monocrystal is finished. The selenium germanium gallium barium monocrystal obtained by the method disclosed by the invention has the advantages of few defects, high infrared band transmission rate and the like and can be used as a far infrared laser frequency conversion material.

The inventiondiscloses avisual three-temperature-area gallium selenide single crystal growth device and method, and relates to a crystal growth device and method. The invention aims to solve technicalproblems of uneven stress distribution and low transmittance of gallium selenide single crystal grown by using a bridgman-stockbarger method in the prior art. The device comprises an outer sleeve, aninner sleeve, a heating resistance wire, an annular cavity, a reflection film, a temperature thermocouple, an end cap, and a heat preservation plug; the reflection film is attached to the inner wallof the outer sleeve; the annular cavity between the outer sleeve and the inner sleeve which are prepared from transparent materials is a vacuum cavity; and the heating resistance wire is arranged in the annular cavity. The method comprises the following steps: placing gallium selenide crystal seeds in a PBN boat, obliquely sealing in a vacuum quartz tube in a suspended manner, placing the quartz tube in the middle of the growth device, adjusting the temperature gradient of the three temperature areas, melting a part of the crystal seeds, fully melting polycrystal materials, then cooling for curing, and finally cooling to the room temperature to obtain allium selenide single crystals. The transmittance of the single crystals is 64%-66%, and the single crystals can be applied in civil and national defense fields.

The invention discloses an adjustable dead-corner-free suspension type far infrared heating system. The system comprises a motor, a spiral lifting device, a transmission shaft and a far infrared radiation device, the motor for driving the spiral lifting device is arranged at the upper end of the spiral lifting device, and the transmission shaft is arranged at the bottom end of the spiral lifting device. The upper end of the transmission shaft is fixedly connected with a screw rod in the spiral lifting device, and the bottom end of the transmission shaft is connected with the far infrared radiation device. The height position, the opening angle and the transmitting power of a far infrared heating plate can be adjusted, so that no heating dead angle exists, and a whole plant is heated by more uniform and sufficient far infrared radiation.

The invention relates to a preparation method of gray track resistance KTiOPO (GTR-KTP) crystals. The method comprises the following steps: firstly preparing a KH2PO4 crystal material, and then carrying out sectional heating to form an even and stable high-temperature solution under a super environment; adopting a method of combining the top end with lifting to grow the GTR-KTP crystals. According to the KTP crystals prepared by the preparation method, an absorption coefficient of the KTP crystals is reduced; a gray track can be effectively prevented, so that the frequency doubling conversion efficiency of the KTP crystals is obviously enhanced; the GTR-KTP crystals are irradiated by a 100mw and 532nm of green light within 1000 seconds in a test; absorption of the system is basically kept stable; a good gray track resistant effect is displayed.

The invention discloses a method for improving the anti-radiation capability of a BOTDR. According to the characteristics that loss of sensing fibers is increased and the action range of Brillouin backward scattering light signals is decreased in the radiation environment, a light pulse sequence is input to the radiated fiber at interval, so that the radiated fiber is full of the light pulse sequence at interval, the Brillouin backward scattering light signals of higher signal to noise ratio are obtained in the interval segments, splicing recombination and matrix transformation coding are carried out on the signals collected in the interval segments, and system response to the whole fiber is obtained. The temperature or strain is sensed according to the relation between Brillouin frequency shift and the frequency / strain. The invention also discloses a system for improving the anti-radiation capability of the BOTDR. The fiber is full of the light pulse sequence at interval, so that the input power is improved, fiber loss caused by radiation is reduced, and the anti-radiation capability of the fiber is improved. Adverse influence caused by fiber loss is avoided, and the anti-radiation capability of the BOTDR system is improved.

The invention relates to the field of beauty and hairdressing equipment, in particular to a hair styling device and a temperature control system and method thereof. The hair styling device includes afirst movable arm and a second movable arm which can be mutually closed, when the first movable arm and the second movable arm are closed, the contact surfaces of the first movable arm and the secondmovable arm are provided with a first hair pressing part and a second hair pressing part which are cooperatively used for tightly clamping hair respectively, and the first movable arm or / and the second movable arm is / are internally provided with a first electromagnetic wave emitter / first electromagnetic wave emitters used for emitting first electromagnetic waves capable of being absorbed by the hair to heat the hair. The hair styling device has the advantages of being simple in structure, convenient to use, high in heating speed and good in heating effect, the hair is heated and shaped throughthe electromagnetic waves, the absorption coefficient of moisture in the hair is low by setting the wavelength of the electromagnetic waves, and therefore the moisture loss of the hair is reduced during use.

A polycrystalline scintillator for detecting soft X-rays contains Ce as a light-emitting element, and at least Y, Gd, Al, Ga and O, has a garnet crystal structure, and has a composition represented by the following general formula: (Y1-x-zGdxCez)3+a(Al1-uGau)5-aO12(wherein 0< = a <= 0.1, 0.15< = x< = 0.3, 0.002 <= z <= 0.015, and 0.35 <= u <= 0.55) The Fe content is 0.05 to 1 ppm by mass exclusively; the Si content is 0.5 to 10 ppm by mass exclusively; the [mu]50 / [mu]100 ratio of the absorption coefficient of a 50 KeV X-ray ([mu]50) to the absorption coefficient of a 100 KeV X-ray ([mu]100) is at least 3; and the afterglow 3 ms after the X-rays have stopped is not more than 800 ppm.

The invention relates to a method for growing low-absorption phosphorus germanium zinc crystal. According to the invention, a temperature gradient zone melting process is adopted and is supplemented with a suitable fluxing agent, for growing under the phase transformation point temperature of the crystal. The method comprises the following steps: (1) pre-treating a growth crucible; (2) preparing raw materials; (3) increasing temperature; (4) growing the crystal; (5) cooling; (6) cleaning. The phosphorus germanium zinc mono-crystal growth according to the method provided by the invention has the characteristics of few defects, low near-infrared residue absorption, and the like. The invention can solve the problems of high growth temperature, high near-infrared residue absorption, and the like, of the present conventional growth method of the phosphorus germanium zinc crystal.

The invention discloses an antibody chip kit for early screening and diagnosis of tumors. The detection is realized based on an enzyme lined immunosorbent assay (ELISA); the antibody chip kit comprises an antibody chip and an antigen standard substance mixture of multiple tumor markers, wherein the antibody chip comprises a base membrane and capture antibodies, fixed on the base membrane, of the multiple tumor markers; the base membrane is a polydimethylsiloxane (PDMS) membrane having a surface containing hydrophilic groups. On the premise of maintaining the characteristics of high sensitivity, large flux, much information and the like, the base membrane adopted by the invention is good in stability, strong in biological compatibility, good in flexibility, easy to clean and convenient to use; chip substrates of the capture antibodies of the tumor markers are fixed.