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Visual three-temperature-area gallium selenide single crystal growth device and method

A growth device and gallium selenide technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of low transmittance, uneven stress distribution of gallium selenide single crystal, etc., and achieve uniform and compact turn spacing , Good optical uniformity, improving the effect of uneven stress distribution

Active Publication Date: 2019-01-08
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The present invention aims to solve the technical problems of uneven stress distribution and low transmittance of the existing gallium selenide single crystal grown by the crucible drop method, and provides a visible three-temperature zone gallium selenide single crystal growth device and growth method

Method used

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  • Visual three-temperature-area gallium selenide single crystal growth device and method
  • Visual three-temperature-area gallium selenide single crystal growth device and method
  • Visual three-temperature-area gallium selenide single crystal growth device and method

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specific Embodiment approach 1

[0023] Specific Embodiment 1: The visible three-temperature-zone gallium selenide single crystal growth device of this embodiment includes an outer sleeve 1, an inner sleeve 2, a heating resistance wire 3, an annular cavity 4, a reflective film 5, and a temperature-measuring thermocouple 6 , end cap 7 and insulation plug 8;

[0024] Wherein the reflective film 5 is attached to the inner wall of the outer sleeve 1;

[0025] The inner sleeve 2 is placed in the outer sleeve 1, the area between the outer sleeve 1 and the inner sleeve 2 is an annular cavity 4, the heating resistance wire 3 is arranged in the annular cavity 4, and the end caps 7 are arranged at both ends of the annular cavity ; The heating resistance wire 3 is divided into three groups, and the temperature measuring thermocouple 6 is set in the area controlled by each group of heating resistance wire;

[0026] Insulation plugs 8 are arranged at both ends of the inner sleeve;

[0027] The material of the outer slee...

specific Embodiment approach 2

[0029] Embodiment 2: This embodiment differs from Embodiment 1 in that the material of the outer sleeve 1 and the inner sleeve 2 is quartz; the others are the same as Embodiment 1.

[0030] In this embodiment, the outer sleeve 1 and the inner sleeve 2 are made of high-strength quartz glass, which can meet the requirement of visualization.

specific Embodiment approach 3

[0031] Specific embodiment three: the difference between this embodiment and specific embodiment one or two is that the reflective film 5 is a gold film coated on the inner wall of the outer sleeve 1, and the thickness of the gold film is 5-20nm; the other is the same as the specific embodiment one or two .

[0032] In this embodiment, the gold film is used as the reflective film, which can improve the utilization rate of heat radiation in the outer sleeve 1, reduce heat loss, and realize the heat preservation effect of the growth device; at the same time, the gold film within this thickness range is transparent, which can realize the crystal growth process real-time perspective observation.

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Abstract

The inventiondiscloses avisual three-temperature-area gallium selenide single crystal growth device and method, and relates to a crystal growth device and method. The invention aims to solve technicalproblems of uneven stress distribution and low transmittance of gallium selenide single crystal grown by using a bridgman-stockbarger method in the prior art. The device comprises an outer sleeve, aninner sleeve, a heating resistance wire, an annular cavity, a reflection film, a temperature thermocouple, an end cap, and a heat preservation plug; the reflection film is attached to the inner wallof the outer sleeve; the annular cavity between the outer sleeve and the inner sleeve which are prepared from transparent materials is a vacuum cavity; and the heating resistance wire is arranged in the annular cavity. The method comprises the following steps: placing gallium selenide crystal seeds in a PBN boat, obliquely sealing in a vacuum quartz tube in a suspended manner, placing the quartz tube in the middle of the growth device, adjusting the temperature gradient of the three temperature areas, melting a part of the crystal seeds, fully melting polycrystal materials, then cooling for curing, and finally cooling to the room temperature to obtain allium selenide single crystals. The transmittance of the single crystals is 64%-66%, and the single crystals can be applied in civil and national defense fields.

Description

technical field [0001] The invention relates to a crystal growing device and a growing method. Background technique [0002] The mid-to-far infrared nonlinear optical crystal realizes continuously adjustable frequency-converted laser output in two bands of 3-5μm and 8-13μm by changing the wavelength of the pump light of the laser, so it is widely used in civil and national defense fields, such as infrared spectroscopy instruments and medical equipment , drug detection, infrared guidance, lidar, infrared remote sensing, etc. As an important mid-to-far infrared nonlinear optical crystal, gallium selenide single crystal has attracted extensive attention due to its large nonlinear optical coefficient and wide light transmission band. Its high performance and large size growth technology are particularly important. The existing gallium selenide single crystal growth method is generally carried out by the crucible drop method, and the transmittance of the single crystal grown by ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/46C30B11/00
CPCC30B11/003C30B29/46
Inventor 朱崇强陈亮杨春晖马天慧雷作涛郝树伟
Owner HARBIN INST OF TECH
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