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A visible three-temperature-zone GaSe single crystal growth device and growth method

A growth device and technology of gallium selenide, applied in the directions of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of low transmittance and uneven stress distribution of gallium selenide single crystal, and achieve uniform and compact turn spacing , Good optical uniformity, uniform heating effect

Active Publication Date: 2021-04-06
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The present invention aims to solve the technical problems of uneven stress distribution and low transmittance of the existing gallium selenide single crystal grown by the crucible drop method, and provides a visible three-temperature zone gallium selenide single crystal growth device and growth method

Method used

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  • A visible three-temperature-zone GaSe single crystal growth device and growth method
  • A visible three-temperature-zone GaSe single crystal growth device and growth method
  • A visible three-temperature-zone GaSe single crystal growth device and growth method

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specific Embodiment approach 1

[0023] Specific Embodiment 1: The visible three-temperature-zone gallium selenide single crystal growth device of this embodiment includes an outer sleeve 1, an inner sleeve 2, a heating resistance wire 3, an annular cavity 4, a reflective film 5, and a temperature-measuring thermocouple 6 , end cap 7 and insulation plug 8;

[0024] Wherein the reflective film 5 is attached to the inner wall of the outer sleeve 1;

[0025] The inner sleeve 2 is placed in the outer sleeve 1, the area between the outer sleeve 1 and the inner sleeve 2 is an annular cavity 4, the heating resistance wire 3 is arranged in the annular cavity 4, and the end caps 7 are arranged at both ends of the annular cavity ; The heating resistance wire 3 is divided into three groups, and the temperature measuring thermocouple 6 is set in the area controlled by each group of heating resistance wire;

[0026] Insulation plugs 8 are arranged at both ends of the inner sleeve;

[0027] The material of the outer slee...

specific Embodiment approach 2

[0029] Embodiment 2: This embodiment differs from Embodiment 1 in that the material of the outer sleeve 1 and the inner sleeve 2 is quartz; the others are the same as Embodiment 1.

[0030] In this embodiment, the outer sleeve 1 and the inner sleeve 2 are made of high-strength quartz glass, which can meet the requirement of visualization.

specific Embodiment approach 3

[0031] Specific embodiment three: the difference between this embodiment and specific embodiment one or two is that the reflective film 5 is a gold film coated on the inner wall of the outer sleeve 1, and the thickness of the gold film is 5-20nm; the other is the same as the specific embodiment one or two .

[0032] In this embodiment, the gold film is used as the reflective film, which can improve the utilization rate of heat radiation in the outer sleeve 1, reduce heat loss, and realize the heat preservation effect of the growth device; at the same time, the gold film within this thickness range is transparent, which can realize the crystal growth process real-time perspective observation.

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Abstract

The invention discloses a gallium selenide single crystal growth device and a growth method in three visible temperature zones, and relates to a crystal growth device and a growth method. The invention aims to solve the technical problems of uneven stress distribution and low transmittance of gallium selenide single crystal grown by the existing crucible drop method. The device of the present invention includes an outer sleeve, an inner sleeve, a heating resistance wire, an annular cavity, a reflective film, a temperature measuring thermocouple, an end cover and a thermal insulation plug; wherein the reflective film is attached to the inner wall of the outer sleeve; the outer sleeve of a transparent material The annular cavity between the barrel and the inner sleeve is a vacuum cavity, and the heating resistance wire is arranged in the annular cavity. Method: Place the gallium selenide seed crystal in a PBN boat, and seal it in a vacuum quartz tube with an inclination in the air, place the quartz tube in the middle of the growth device, adjust the temperature gradient of the three temperature zones, first melt the seed crystal part and The crystal material is completely melted, then cooled and solidified, and finally lowered to room temperature to obtain a gallium selenide single crystal with a transmittance of 64% to 66%, which can be used in civil and national defense fields.

Description

technical field [0001] The invention relates to a crystal growing device and a growing method. Background technique [0002] The mid-to-far infrared nonlinear optical crystal realizes continuously adjustable frequency-converted laser output in two bands of 3-5μm and 8-13μm by changing the wavelength of the pump light of the laser, so it is widely used in civil and national defense fields, such as infrared spectroscopy instruments and medical equipment , drug detection, infrared guidance, lidar, infrared remote sensing, etc. As an important mid-to-far infrared nonlinear optical crystal, gallium selenide single crystal has attracted extensive attention due to its large nonlinear optical coefficient and wide light transmission band. Its high performance and large size growth technology are particularly important. The existing gallium selenide single crystal growth method is generally carried out by the crucible drop method, and the transmittance of the single crystal grown by ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/46C30B11/00
CPCC30B11/003C30B29/46
Inventor 朱崇强陈亮杨春晖马天慧雷作涛郝树伟
Owner HARBIN INST OF TECH
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