The invention discloses a synaptic
transistor based on a two-dimensional
semiconductor material and a preparation method of the synaptic
transistor. The synaptic
transistor comprises an insulating substrate, and a channel, a source
electrode, a drain
electrode and a gate
electrode which are arranged on the substrate, wherein the channel is a two-dimensional
semiconductor material; the source electrode and the drain electrode are arranged at the two ends of the channel respectively and form an
ohmic contact with the channel material; the gate electrode and an electrical
interconnection system formed by the channel, the source electrode and the drain electrode are kept in electronic insulation; an organic
electrolyte covers a channel region and most of the gate electrode and comprises an organic carrier capable of being electrically insulated and ions capable of being migrated, and effective
ion control of the gate to the channel material is formed. According to the synaptic transistor based on the two-dimensional
semiconductor material and the preparation method of the synaptic transistor, an
ion attachment-intercalation mechanism is utilized, and the characteristics of large surface area and adjustable resistance value of the two-dimensional material are combined, so that the device shows long-term and short-term
synaptic plasticity, and the two characteristics can change witheach other along with the change of a gate
signal. Meanwhile, the device has good
linearity and ultralow operational
power consumption, and the implementation and large-scale integration application of a high-precision neuromorphic device are facilitated.