87results about How to "Reduction in yield" patented technology

The invention provides a high throughput, high purity, high yield system and method of isolating and purifying rebaudioside A (“Reb A”), with acceptable water solubility for all commercial uses, from commercially available Stevia rebaudiana starting material. The invention also provides a means of maximizing yields of 99+% purity Reb A based on the attributes of a given batch of Stevia starting material. The Reb A produced by the invention is water soluble, devoid of bitterness heretofore associated with rebaudioside sweeteners, non-caloric, and suitable for use as a reagent and as an ingredient in orally consumed products, e.g., as a sweetener, flavor enhancer, and flavor modifier.

A method for recovering lithium as lithium hydroxide by feeding an aqueous stream containing lithium ions to a bipolar electrodialysis cell, wherein the cell forms a lithium hydroxide solution. An apparatus or system for practicing the method is also provided.

Basic redundancy information is non-volatily stored in a reserved area of an addressable area of a memory array, and is copied to volatile storage therein at every power-on of the memory device. The unpredictable though statistically inevitable presence of failed array elements in such a reserved area of the memory array corrupts the basic redundancy information established during the test-on wafer (EWS) phase of the fabrication process. This increases the number of rejects, and lowers the yield of the fabrication process. This problem is addressed by writing the basic redundancy data in the reserved area of the array with an ECC technique using a certain error correction code. The error correction code may be chosen among majority codes 3, 5, 7, 15 and the like, or the Hamming code for 1, 2, 3 or more errors, as a function of the fail probability of a memory cell as determined by the EWS phase during fabrication.

The invention is directed to a method of manufacturing single-walled carbon nanotubes comprising the steps of providing on a substrate at least one pillar comprising alternate layers of a first precursor material comprising fullerene molecules and a second precursor material comprising a catalyst, and heating the at least one pillar in the presence of a first magnetic or electric field. It further is directed to a precursor arrangement for manufacturing single-walled carbon nanotubes comprising on a substrate at least one pillar comprising alternate layers of a first precursor material comprising fullerene molecules and a second precursor material comprising a catalyst. A third aspect is a nanotube arrangement comprising a substrate and thereupon at least one crystal comprising a bundle of single-walled carbon nanotubes with essentially identical orientation and structure.

An improvement is achieved in the mounting reliability of a semiconductor device. A semiconductor chip is mounted over an upper surface of a wiring substrate. A plurality of solder balls are disposed individually over a plurality of lands formed on a lower surface of the wiring substrate. The plural lands include a first land group arranged in a plurality of rows and arranged along a peripheral edge portion of the lower surface of the wiring substrate, and a second land group arranged inside the first land group in the lower surface of the wiring substrate. The lands in the first land group are arranged with a first pitch, and the lands in the second land group are arranged with a second pitch higher than the first pitch.

A copper-clad laminate is prepared by laminating a copper foil on one side or both sides of a polyimide film by thermocompression bonding. The flexibility of the copper-clad laminate is remarkably improved by employing a polyimide film having a thickness of 5 to 20 μm and a copper foil having a thickness of 1 to 18 μm.

Integrated slurry hydrocracking (SHC) and coking methods for making slurry hydrocracking (SHC) distillates are disclosed. Representative methods involve passing a slurry comprising a recycle SHC gas oil, a coker gas oil, a vacuum column resid, and a solid particulate through an SHC reaction zone in the presence of hydrogen to obtain the SHC distillate. Recovery of an SHC pitch from fractionation of the SHC reaction zone effluent provides an additional possibility for integration with the coker, and particularly via the upgrading of the SHC pitch in the coker to provide coke and lighter hydrocarbons such as SHC vacuum gas oil (VGO).

It is an object of the present invention to provide a photovoltaic module capable of reducing an area occupied by interconnectors. The photovoltaic module of the present invention comprises light-transmitting substrate, strings including a plurality of solar cells interconnected through tab connector, and rear surface member. A plurality of the strings is electrically connected through interconnectors and arranged on a rear surface side so as not to overlap each other. The photovoltaic module is sealed with a sealant between the light-transmitting substrate and the rear surface member.

An ink cartridge includes a thermal ink-jet head provided with a heat generating portion that generates thermal energy for ejecting the ink from an ejection opening, in which: the heat generating portion has, on its surface in contact with the ink, a protective layer containing at least one selected from the group consisting of a silicon oxide, a silicon nitride, and a silicon carbide; and the ink contains a substance that dissolves the protective layer and a compound represented by (R₂)_nA—. . . —N(R₁)C(O)R₃(R₄)—(A) where A represents alkylene or alkenylene which forms a ring with a nitrogen atom, a carbonyl group and R₃, R₁ and R₄ each represent hydrogen atom, hydroxyl, alkyl, alkenyl, acyl, carbamoyl, carboxyl or sulfonyl, R₂ represents a group bonded to an arbitrary carbon atom of A and represents hydrogen atom, hydroxyl, alkyl, alkenyl, acyl, carbamoyl, carboxyl or sulfonyl, n represents 0 to 4, and R₃ represents carbon or nitrogen atom, and a content X (% by mass) of the compound satisfies 1≦X≦30.

There is provided an ink cartridge including: a thermal ink-jet head provided with a heat generating portion that generates thermal energy for ejecting ink from an ejection opening, and contains the ink. In the ink cartridge, the heat generating portion has, at its surface in contact with the ink, a protective layer containing at least one selected from the group consisting of a silicon oxide, a silicon nitride, and a silicon carbide; and the ink contains at least one of a polyvalent carboxylic acid and a salt thereof, and the total content of the polyvalent carboxylic acid and the salt thereof is in the range of from 0.001 mmol/l or more to 0.5 mmol/l or less. The ink cartridge shows a small change in driving pulse and a small change in image to be outputted, and provides sufficient ejection property and sufficient printing durability.

A method for manufacturing a solid-state image sensor having a pixel region, a peripheral circuit region, and an intermediate region interposed between the pixel region and the peripheral circuit region, includes forming a high melting point metal compound in active regions of the peripheral circuit region and the intermediate region, forming an etch stop film on the high melting point metal compound formed in the active regions of the peripheral circuit region and the intermediate region, forming an interlayer insulating film on the etch stop film, and forming, by using the etch stop film, a contact plug to contact the high melting point metal compound in the active region of the peripheral circuit region.

A method for cracking hydrocarbon includes: providing hydrocarbon; and feeding the hydrocarbon into an apparatus having an inner surface accessible to hydrocarbon, the inner surface comprising a perovskite material and a tuning material; wherein a yield of coke in the apparatus is lower than that in an apparatus without the perovskite material; and a yield of carbon monoxide in the apparatus is lower than that in an apparatus without the tuning material. An associated apparatus is also described.

The invention relates to a method for producing high-molecular polyester such as polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polynaphthalene terephthalate (PEN), polytrimethylene terephthalate (PTT) and/or polyester of other dicarboxylic acids and diols, including the copolymers of the same. The invention also relates to a device for carrying out said method, the device being a single-stage tower reactor by which means a method involving only two reactors is carried out for the entire process.

An object of the present invention is to provide a method and a system by which hydroxycarboxylic acid cyclic dimers are efficiently generated, allowing high yields of high-quality polyhydroxycarboxylic acid to be obtained. The method for synthesizing polyhydroxycarboxylic acid comprises a depolymerization step for depolymerizing hydroxycarboxylic acid oligomers to produce hydroxycarboxylic acid cyclic dimers, wherein, in the depolymerization step, a reaction solution is heated via heat transfer from a heat medium passage under reduced pressure while the reaction solution is being flowing through a horizontally provided reaction solution passage.

It is an object to provide a method for manufacturing an SOI substrate in which reduction in yield can be suppressed while impurity diffusion into a semiconductor film is suppressed. A semiconductor substrate provided with an oxide film is formed by thermally oxidizing the surface of the semiconductor substrate. Plasma is generated under an atmosphere of a gas containing nitrogen atoms and plasma nitridation is performed on part of the oxide film, so that a semiconductor substrate in which an insulating film containing nitrogen atoms is formed over the oxide film is obtained. After bonding the insulating film containing nitrogen atoms and a glass substrate to each other, the semiconductor substrate is split, whereby an SOI substrate in which the insulating film containing nitrogen atoms, the oxide film, a thin semiconductor film are stacked in this order is formed.

A method for fabricating connection terminals of a circuit board is proposed. The method involves providing a circuit board with connection pads thereon, forming an insulating layer with first openings over the circuit board to expose the connection pads, forming a conductive layer over the insulating layer, forming a first resist layer with second openings over the conductive layer to partially expose the conductive layer, electroplating a first metal connection layer on the exposed conductive layer, followed by forming a second resist layer with third openings over the first conductive layer to partially expose the first metal connection layer, and electroplating a second metal connection layer on the exposed first connection layer, and removing portions of the first and second resist layers and conductive layer covered by the first and second resist layers to form metal connection material of different heights and sizes on the connection pads.

A system and method is provided for beneficiating, or “cleaning”, ultra-fine raw coal with a combination of small diameter water-only cyclones and spiral concentrators. The inventive system includes multiple pre- and post- classification systems to size the finer sized raw mineral to develop a pre-sized mineral fraction smaller that a predetermined first size (approximately 0.15 mm). The pre-sized mineral fraction is fed to at least one water-only cyclone which separates the pre-sized mineral fraction according to specific gravity. The high specific gravity mineral fraction is fed to at least one spiral concentrator, wherein the at least one spiral concentrator separates the high specific gravity mineral fraction into clean mineral and refuse by specific gravity. Water may be added to the inlet of the at least one spiral concentrator to maintain a constant flow through the at least one spiral concentrator. Additionally, residual minus 0.044 mm particles may be removed from the clean mineral output, and also from the low specific gravity mineral fraction, by a post classification system.

Apparatus and methods for synchronously removing coverlay film from an adhesive film and applying an adhesive strip cut from the adhesive film to cover one or more reject die sites and/or functional die sites on semiconductor package support elements are disclosed. Reject die sites on defective substrates are covered prior to encapsulation.

An object is to provide a semiconductor device in which damages of an element such as a transistor are reduced even when physical force such as bending is externally applied to generate stress in the semiconductor device. A semiconductor device includes a semiconductor film including a channel formation region and an impurity region, which is provided over a substrate, a first conductive film provided over the channel formation region with a gate insulating film interposed therebetween, a first interlayer insulating film provided to cover the first conductive film, a second conductive film provided over the first interlayer insulating film so as to overlap with at least part of the impurity region, a second interlayer insulating film provided over the second conductive film, and a third conductive film provided over the second interlayer insulating film so as to be electrically connected to the impurity region through an opening.

A method of manufacturing an organic electroluminescent display device of the invention includes the steps of: forming, on a mother substrate including display regions and terminal forming regions, an upper electrode in each of the display regions; and cutting the mother substrate along each border between the display regions to thereby divide the mother substrate into a plurality of individual pieces. The step of forming the upper electrode includes the step of depositing a material of the upper electrode in the display regions using a mask including a frame-shaped frame and stripe-shaped shielding portions that cover regions corresponding to the terminal forming regions. The shielding portion is fixed in a state where the shielding portion spans between facing sides of the frame and tension in one direction is applied, and extends only in the one direction inside an inner periphery of the frame in a plan view.

This semiconductor laser device includes a substrate, a blue semiconductor laser element, formed on the surface of a substrate, including a first active layer made of a nitride-based semiconductor and having a first major surface of a non-C plane and a green semiconductor laser element, formed on the surface of the substrate, including a second active layer made of a nitride-based semiconductor and having a second major surface of a surface orientation substantially identical to the non-C plane.