79results about How to "Maximum coupling" patented technology

A hard bias (HB) structure for biasing a free layer in a MR sensor within a magnetic read head is comprised of a main biasing layer with a large negative magnetostriction (λS) value. Compressive stress in the device after lapping induces a strong in-plane anisotropy that effectively provides a longitudinal bias to stabilize the sensor. The main biasing layer is formed between two FM layers, and at least one AFM layer is disposed above the upper FM layer or below the lower FM layer. Additionally, there may be a Ta / Ni or Ta / NiFe seed layer as the bottom layer in the HB structure. Compared with a conventional abutted junction exchange bias design, the HB structure described herein results in higher output amplitude under similar asymmetry sigma and significantly decreases sidelobe occurrence. Furthermore, smaller MRWu with a similar track width is achieved since the main biasing layer acts as a side shield.

A RF device such as a tower mounted amplifier (TMA), mast-head amplifier (MHA), or Tower Mounted Boosters (TMB) includes a housing having a plurality of cavities and an input and an output, the input being coupled to the antenna and the output being coupled to a base station. The housing includes a transmission path holding multiple coaxial resonators. The housing further includes multiple receive paths including at least one path having a plurality of cavities, each cavity containing a dielectric resonator. The metallic transmit resonator nearest the antenna input is coupled to the first dielectric resonator via a common resonant wire. The last dielectric resonator in the receive path is coupled to a first metallic resonator of a downstream clean-up filter via another common resonant wire.

A finFET-based non-volatile memory device on a semiconductor substrate includes source and drain regions, a fin body, a charge trapping stack and a gate. The fin body extends between the source and the drain region as a connection. The charge trapping stack covers a portion of the fin body and the gate covers the charge trapping stack at the location of the fin body. The fin body has a corner-free shape for at least ¾ of the circumference of the fin body which lacks distinct crystal faces and transition zones in between the crystal faces.

A dual-polarized microstrip patch antenna structure comprising: a dual microstrip feed line circuitry underneath a bottom dielectric substrate; a ground plane layer overlying the bottom dielectric substrate, the ground plane layer having coupling apertures etched to the ground plane layer; a middle metallized patch layer stacked over a middle dielectric substrate; a top metallized patch layer stacked underneath a top dielectric substrate; and an air layer between the middle dielectric substrate and the top dielectric substrate separating the middle metallized patch layer and the top metallized patch layer. The microstrip feed line circuitry is configured to utilize corner-feeding techniques for enabling diagonal modes of the patch layers, and the coupling apertures of the ground plane layer are provided with a non-resonant bow-tie shape for enabling aperture coupling between the microstrip feed line circuitry and the patch layers.

An acoustic driver assembly for use with a spherical cavitation chamber is provided. The acoustic driver assembly includes at least one transducer, a head mass and a tail mass, coupled together with a centrally located threaded means (e.g., all thread, bolt, etc.). The driver assembly is permanently attached to the exterior surface of the spherical cavitation chamber via brazing or diffusion bonding. In at least one embodiment, the transducer is comprised of a pair of piezo-electric transducers, preferably with the adjacent surfaces of the piezo-electric transducers having the same polarity. The surface of the head mass that is adjacent to the external surface of the chamber has a spherical curvature equivalent to the spherical curvature of the external surface of the chamber, thus providing maximum coupling efficiency between the acoustic driver and the cavitation chamber. In at least one embodiment a void filling material is interposed between one or more pairs of adjacent surfaces of the driver assembly.

A coupling loop or antenna is provided that can be used with a system that determines the resonant frequency of a sensor by adjusting the phase and frequency of an energizing signal until the frequency of the energizing signal matches the resonant frequency of the sensor. A cable attached to the coupling loop provides maximum isolation between the energizing signal and the sensor signal by maximizing the distance between the coaxial cables that carry the signals and maintaining the relative positions of the coaxial cables throughout the cable assembly.

The present invention provides an optical connection component which comprises a solid state laser component for emitting a modulated beam of light in response to an applied electrical signal. The optical connection component also comprises an optical lens positioned relative to the solid state laser component at a predetermined position in which the optical lens reduces divergence of the emitted beam of light. The optical lens is formed at the predetermined position in a manner such that the optical lens is immobile relative to the solid state laser component. The optical connection component further comprises an optical waveguide having a core for guiding the light. The optical waveguide has first and second end-portions. The first end-portion is positioned for coupling the modulated light from the optical lens into the core. In addition, the optical connection component comprises a receiver for receiving the modulated light from the second end-portion of the optical waveguide and arranged for converting the modulated light into a corresponding electrical signal.

A hard bias (HB) structure for biasing a free layer in a MR sensor within a magnetic read head is comprised of a main biasing layer with a large negative magnetostriction (λS) value. Compressive stress in the device after lapping induces a strong in-plane anisotropy that effectively provides a longitudinal bias to stabilize the sensor. The main biasing layer is formed between two FM layers, and at least one AFM layer is disposed above the upper FM layer or below the lower FM layer. Additionally, there may be a Ta / Ni or Ta / NiFe seed layer as the bottom layer in the HB structure. Compared with a conventional abutted junction exchange bias design, the HB structure described herein results in higher output amplitude under similar asymmetry sigma and significantly decreases sidelobe occurrence. Furthermore, smaller MRWu with a similar track width is achieved since the main biasing layer acts as a side shield.