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82results about How to "Low extinction coefficient" patented technology

Methods of depositing stable and hermetic ashable hardmask films

The present invention provides PECVD methods for forming stable and hermetic ashable hard masks (AHMs). The methods involve depositing AHMs using dilute hydrocarbon precursor gas flows and / or high LFRF / HFRF ratios. In certain embodiments, the AHMs are transparent and have high etch selectivities. Single and dual layer hermetic AHM stacks are also provided. According to various embodiments, the dual layer stack includes an underlying AHM layer having tunable optical properties and a hermetic cap layer.
Owner:NOVELLUS SYSTEMS

Preparation method for high-refractive index hydrogenated silicon film, high-refractive index hydrogenated silicon film, light filtering lamination and light filtering piece

The invention discloses a preparation method for a high-refractive index hydrogenated silicon film, the high-refractive index hydrogenated silicon film, a light filtering lamination and a light filtering piece and relates to the technical field of optical films. The preparation method comprises the following steps that firstly, by means of magnetic controlled Si target sputtering, Si deposits on abase body, and a silicon film is formed; and secondly, the hydrogenated silicon film containing oxygen is formed through the silicon film under the environment where activated hydrogen and active oxygen are contained, the amount of the activated oxygen accounts for 4%-99% of the total amount of the activated hydrogen and the activated oxygen, or, the hydrogenated silicon film containing nitrogenis formed through the silicon film under the environment where the activated hydrogen and the activated nitrogen are contained, and the amount of the activated nitrogen accounts for 5%-20% of the total amount of the activated hydrogen and the activated nitrogen. According to the preparation method, sputtering and a reaction are separately conducted, firstly, by means of magnetic controlled Si target sputtering, Si deposits on the base body, then, plasmas of the activated hydrogen and the activated oxygen / nitrogen react with the silicon to obtain the oxygen or nitrogen containing SiH, the poisoning problem of a target is avoided, and the SiH film has a relatively high refractive index and relatively low absorption.
Owner:ZHEJIANG CRYSTAL OPTECH

Method of forming a high transparent carbon film

A method of forming a transparent hydrocarbon-based polymer film on a substrate by plasma CVD includes: introducing a main gas consisting of a hydrocarbon gas (CαHβ, wherein α and β are natural numbers) and an inert gas at a flow ratio (R) of CαHβ / inert gas of 0.25 or less into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-based polymer film on the substrate by plasma polymerization of the gas at a processing temperature (T) wherein T≦(−800R+500).
Owner:ASM JAPAN

Nanometer micropore heat insulation board and manufacturing method thereof

The invention relates to a nanometer micropore heat insulation board. Structurally, an insulation layer, an anti-radiation layer and an enhancement layer are arranged from the cold face to the hot face in sequence. When the nanometer micropore heat insulation board is used, the enhancement layer close to the hot face has strong high-temperature resistance and a strong mechanical property, the insulation layer far away from the hot face has good insulation and heat insulation properties, furthermore, opacifying agent components are added into the anti-radiation layer serving as the middle layer, the radiative heat transferring of the anti-radiation layer is reduced by reducing the overall extinction coefficient, and the insulation and heat insulation properties of the insulation board are intensified. Due to the fact that different opacifying agents have different extinction coefficients and a wide anti-radiation temperature range can be shown, the nanometer micropore heat insulation board can keep the good insulation and heat insulation properties under the high-temperature condition.
Owner:桐乡市中元建材科技有限公司

Aromatic amine compound and organic light-emitting device (OLED) containing compound

The invention relates to an aromatic amine compound and an organic light-emitting device (OLED) containing the compound. The structural formula of the aromatic amine compound is as shown in the following description. The aromatic amine compound involved in the invention has relatively high refractive index, and can improve the light extraction efficiency of a top-emitting organic photoelectronic device when used as the capping layer of an organic light-emitting display device. The aromatic amine compound involved in the invention has relatively small extinction coefficient, and barely absorbs blue light, thereby facilitating the improvement of the luminous efficiency; meanwhile, the aromatic amine compound can effectively block water and oxygen in an external environment, and protects an OLED display panel from being eroded by the water and the oxygen, and the OLED can achieve high efficiency and long life. Compared with a known OLED, the OLED involved in the invention can greatly improve the light extraction efficiency because a material for an organic EL element with high refractive index, and excellent film stability and durabilityis used as a material for the covering layer. The organic light-emitting device involved in the invention can achieve high efficiency and long life.
Owner:JILIN OPTICAL & ELECTRONICS MATERIALS

Heterocyclic arylamine compound and application thereof on organic electronic devices

The invention relates to the technical field of organic electroluminescence, in particular to a heterocyclic arylamine compound and application of the heterocyclic arylamine compound on electronic devices, especially applications of the heterocyclic arylamine compound on organic light-emitting diodes. The heterocyclic arylamine compound disclosed by the invention has a proper energy level, has a relatively high extinction coefficient in the ultraviolet region and a relatively high refractive index in the visible light region, and can be used as a light extraction layer in devices. Damage of external high-energy light on internal materials of organic electroluminescence display equipment can be reduced, the light extraction rate is increased, and the light emitting efficiency of devices isimproved.
Owner:GUANGZHOU CHINARAY OPTOELECTRONICS MATERIALS +1

Multi-layer heterogeneous antireflection film solar cell

The invention discloses a multi-layer heterogeneous antireflection film solar cell. The specific operation steps are: (1) adopting the conventional texturing, diffusing and etching processes; (2) on the basis of the conventional PECVD coating technology, after diffusing and etching, depositing a multi-layer heterogeneous antireflection film on the surface of a silicon wafer, wherein the multi-layer heterogeneous antireflection film has a structure of SiO2 / SiNx / SiOxNy / SiO2; (3) adopting the conventional process to print an electrode and conduct sintering, thereby obtaining the solar cell. The invention has the beneficial effects that the multi-layer heterogeneous antireflection film structure increases a dielectric constant of the antireflection film, reduces reflection of sunlight by the solar cell and reduces an extinction coefficient of the antireflection film. Meanwhile, the antireflection film achieves relatively good passivation effect, thereby enhancing physical and electrical properties of the solar cell. The crystalline-silicon solar cell of the invention has excellent PID-Free performance, and the photoelectric conversion efficiency is significantly improved.
Owner:HENGDIAN GRP DMEGC MAGNETICS CO LTD

Method of depositing thin film and method of manufacturing semiconductor using the same

Disclosed herein are a method of depositing a thin film and a method of manufacturing a semiconductor using the same, having high selectivity by increasing etching resistance while an extinction coefficient associated with anti-reflectivity is maintained low. The method of depositing a thin film according to the invention includes (a) depositing an carbon anti-reflective film on the bottom film of a substrate; and (b) adding a compound containing nitrogen (N), fluorine (F) or silicon (Si) to the surface or the inner portion of the carbon anti-reflective film, to deposit a thin film of a-C:N, a-C:F or a-C:Si, having high selectivity, to a thickness from 1 to 100 nm using an atomic layer deposition process. Therefore, an ultrathin film having etching resistance is formed on or in the carbon anti-reflective film and the density and compressive stress of the carbon anti-reflective film are increased, thus increasing etching selectivity.
Owner:WONIK IPS CO LTD

Organic light-emitting device

The invention provides an organic light-emitting device, and relates to the technical field of organic photoelectricity. The organic light-emitting device comprises a substrate, a first electrode, anorganic matter layer, a second electrode, a first covering layer and a second covering layer, the first covering layer and the second covering layer are located on the outer side of the second electrode, the first covering layer comprises a nitrogen-containing heterocyclic compound, and the second covering layer comprises an organic matter or an inorganic matter. The refractive index of the firstcovering layer material ranges from 1.8 to 2.2, the refractive index of the second covering layer material is larger than that of the first covering layer, and the refractive index meets the formula that n2-n1 is larger than or equal to 0.3. The compounds contained in the two covering layers have higher refractive indexes, so that the light extraction efficiency of the device can be effectively improved; and because the refractive index difference value of the two covering layer materials is large, the microcavity effect is enhanced, the light extraction efficiency can be effectively improved,and the light emitting efficiency of the device is improved. Meanwhile, the introduction of the covering layer can effectively isolate oxygen and moisture in the air, thereby prolonging the service life of the device.
Owner:CHANGCHUN HYPERIONS TECH CO LTD

Solar selective absorbing coating and preparation method thereof

The invention provides a solar selective absorbing coating. The solar selective absorbing coating is sequentially provided with a substrate, an infrared reflection layer, a transition layer, a composite absorbing layer and an antireflection layer from the bottom layer to the surface. Besides, the transition layer is arranged to be made of one or more of CrNx, yCrN*(1-y)Cr2O3, ySi3N4*(1-y)SiO2, yAlN*(1-y)Al2O3 and yTi3N4*(1-y)TiO2, wherein x is larger than 1 and smaller than 1.5, and y is larger than 0 and smaller than 1. Thus, the coating can effectively prevent mutual diffusion between the infrared reflection layer and the absorbing layer, and mutual diffusion among the infrared reflection layer, a diffusion impervious layer and the absorbing layer in the solar selective absorbing coating comprising the diffusion impervious layer The thermal stability of the solar selective absorbing coating is improved, so that the solar selective absorbing coating still has high solar spectral absorptivity and low infrared radiance under the atmospheric condition of 400 DEG C. The solar selective absorbing coating has the good thermal stability and excellent spectral selectivity.
Owner:CHINA BUILDING MATERIALS ACAD

Sputtering Target of Sintered Ti-Nb Based Oxide, Thin Film of Ti-Nb Based Oxide, and Method of Producing the Thin Film

Provided is a sputtering target of sintered Ti—Nb based oxide, wherein the sputtering target consists of titanium (Ti), niobium (Nb), and remainder being oxygen and unavoidable impurities, and the atomic ratio of Ti and Nb is 0.39≦(Nb / (Ti+Nb))≦0.79. The sputtering target of sintered Ti—Nb based oxide has a high refractive index and a low extinction coefficient. Also provided is a thin film of Ti—Nb based oxide obtained by using the foregoing target, which enables high-rate deposition. The thin film has superior transmittance, is subject to minimal reduction and variation of reflectivity, and is useful as an interference film or a protective film of an optical information recording medium, or as a part of a constituent layer of an optical recording medium. The thin film can also be applied to a glass substrate; that is, it can be used as a heat reflecting film, an antireflection film, or an interference filter.
Owner:JX NIPPON MINING & METALS CORP

Nitrogen heterocyclic, display panel, and display device

The invention provides a nitrogen heterocyclic. The nitrogen heterocyclic possesses a structure represented by chemical formula I, wherein z is 1 or 2; m and n are 1 or 2 respectively; p and q are 0,1, or 2 respectively; X1 to X6 are used for representing elements independently selected from N or C, and at least one from X1 to X6 is used for representing N; R1, R2, and R3 are used for representing C1-C10 straight chain or branched chain alkyl, substituted or non-substituted aromatic groups, fused aryl, aromatic heterocyclic, and fused aromatic heterocyclic independently; R1 and R2 are used for representing single bond; Ar1 and Ar2 are used for representing substituted or non-substituted aromatic groups, fused aryl, aromatic heterocyclic, and fused aromatic heterocyclic independently. Thenitrogen heterocyclic is relatively high in refractive rate; when the nitrogen heterocyclic is used in CPL cap layer of OLED devices, the top emission OLED light extraction efficiency and luminescenceefficiency can be increased (especially effective on blue light pixel), and OLED device luminescence angle dependency is alleviated (especially effective on red / green light pixel).
Owner:WUHAN TIANMA MICRO ELECTRONICS CO LTD

Solar spectrum selective absorptive coating and manufacturing method thereof

The invention discloses a solar spectrum selective absorptive coating. The structure of the coating sequentially comprises the following parts from a substrate to an air interface: the substrate 1, an infrared reflection layer 2, absorption layer metal 31 and semiconductor absorption layer germanium with heat matching functions and an antireflection layer 4 which comprises a high refraction index medium layer 41 and a low refraction index medium layer 42. The solar spectrum selective absorptive coating has excellent spectrum selectiveness, and the absorption-reflection transition region is steep; the solar spectrum selective absorptive coating has a high absorption ratio alpha in the solar spectral range of 0.3 to 2.5 micrometers, and has a very low radiance ratio epsilon in the thermal radiation infrared region of 2 to 50 micrometers, and the ratio of alpha to epsilon is much higher than that of present commercial products, so that the solar spectrum selective absorptive coating is applicable to low-power focused medium-temperature solar thermal collectors. Furthermore, the manufacturing process is simple, and the requirement on coating equipment is low, so that the solar spectrum selective absorptive coating is suitable for large-scale low-cost production. With the SiO2 / TiO2 / Ge / Ti / Al structure disclosed by the invention, compared with a coating having a SiO2 / TiO2 / Ge / Al structure with an absorption layer manufactured singly from Ge, the coating disclosed by the invention is advantaged in that the thermal stability of the coating is obviously improved, and the coating has higher absorptivity and similar radiance.
Owner:TAHOE TECH

Thin Film Mainly Comprising Titanium Oxide, Sintered Sputtering Target Suitable for Producing Thin Film Mainly Comprising Titanium Oxide, and Method of Producing Thin Film Mainly Comprising Titanium Oxide

Provided is a thin film mainly comprising titanium oxide, wherein the thin film comprises components of Ti, Ag and O and contains 29.6 at % or more and 34.0 at % or less of Ti, 0.003 at % or more and 7.4 at % or less of Ag, and oxygen as the remainder thereof, and O / (2Ti+0.5Ag) as a ratio of oxygen to metals is 0.97 or more. This invention aims to provide a thin film mainly comprising titanium oxide having a high refractive index and a low extinction coefficient, a sintered sputtering target mainly comprising titanium oxide suitable for producing the thin film, and a method of producing a thin film mainly comprising titanium oxide. This invention also aims to provide a thin film that has superior transmittance, minimally deteriorates in reflectance, and is useful as an interference film or a protective film for an optical information recording medium. It is also possible to apply this film to a glass substrate; that is, which can be used as a heat reflective film, an antireflective film, and an interference filter.
Owner:JX NIPPON MINING & METALS CO LTD

Preparation method of oxygen-stabilized yttrium fluoride film

A preparation method of an oxygen-stabilized yttrium fluoride film relates to a preparation method of an yttrium fluoride film. The invention solves the problems of optical constant distortion due to the lack of fluorine, caduceus film, unstable structure and poor optical performance in present preparation methods of the yttrium fluoride film. The preparation method provided by the invention comprises the following steps of: washing a ZnS substrate with the use of acetone, alcohol and deionized water, displacing the ZnS substrate on a rotating heating stage in a magnetron sputtering vacuum container, followed by vacuum-pumping and heating; blowing Ar gas into the vacuum container and carrying out anti-powder sputtering cleaning on the surface of the ZnS substrate; vacuumizing and heating after film coating, and cooling to room temperature to finish the whole process. The oxygen-stabilized yttrium fluoride film is prepared by the magnetron sputtering method, thus improving the optical constant distortion due to the lack of fluorine and simultaneously preventing the shedding and rupture of the film. The oxygen-stabilized yttrium fluoride film has good optical performance, low refractive index and excellent stability; and the extinction coefficient of the film is greatly reduced and the film is firmly adhered.
Owner:HARBIN INST OF TECH

Azacyclo-compound, display panel and display device

The invention provides an azacyclo-compound having the structure shown in the chemical formula 1. In the formula 1, X1 to X6 independently represent N or C atoms, at least one of X1 to X6 is an N atom, m and n independently represent 0, 1 or 2, m+n is greater than 1, R1 represents a hydrogen atom, a C1-C10 linear or branched alkyl group, a substituted or unsubstituted phenyl group, a diphenyl group, a terphenyl group, a pyridyl group, a naphthyl group or an anthracenyl group, Ar is selected from a dimethyl fluorene group, a phenyl group and a carbazolyl group, and Ar1 and Ar2 independently represent a substituted or unsubstituted benzimidazole group. The azacyclo-compound has a high refractive index, when the azacyclo-compound is used as a CPL cap layer of an organic light-emitting and display device (such as an OLED), light extraction efficiency and luminous efficiency of the top emission organic photoelectric device can be improved, and the angular dependence of OLED device illumination is reduced. The azacyclo-compound has a small extinction coefficient in the blue region and almost no absorption of blue light and improves luminous efficiency.
Owner:WUHAN TIANMA MICRO ELECTRONICS CO LTD

Coated glass being ultrahigh in visible light transmittance and preparation method thereof

The invention discloses coated glass being ultrahigh in visible light transmittance and a preparation method thereof and belongs to the technical field of coated glass. The coated glass includes a glass substrate, and includes following layers outwardly from the glass substrate successively: a first silicon nitride film layer, a first niobium oxide film layer, a zinc aluminum oxide film layer, a silver film layer, a nickel chromium oxide film layer, a zinc tin antimony oxide film layer, a second niobium oxide film layer, a second silicon nitride film layer and a titanium oxide film layer. The coated glass is low in emissivity and is ultrahigh in the visible light transmittance.
Owner:QINGDAO GLORIOUS FUTURE ENERGY SAVING GLASS CO LTD

Long-wave infrared multispectral imaging device based on filter array and design method of device

The invention discloses a long-wave infrared multispectral imaging device based on a filter array and a design method of the device. The multispectral imaging device can divide an incident light signal of a long-wave infrared band into a plurality of spectral channels, and comprises a substrate and a plurality of filter arrays periodically arranged on the substrate, and each filter array is formed by arranging a plurality of groups of multilayer film structures; the multi-layer film structure is an F-P cavity formed by alternately arranging high-refractive-index film layers and low-refractive-index film layers, and the number of the film layers of the multi-layer film structure is an odd number larger than 1; and the multiple groups of multi-layer film structures are configured to be capable of filtering incident light signals of a long-wave infrared band to obtain multiple beams of transmission light with different bandwidths and different central wavelengths so as to form multiple spectrum channels. The device is designed by combining electromagnetic simulation software with transmission matrix method calculation, has the advantages of simple structure, high integration level, real-time imaging and the like, and can be used for dangerous gas detection, environment monitoring, remote sensing and other scenes applying a long-wave infrared multispectral imaging technology.
Owner:INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI

High refractive index benzoheterocycle compound, organic light-emitting device and display device

The present invention discloses a high refractive index benzoheterocycle compound represented by a formula (I), wherein X1 and X2 are respectively and independently selected from O or S; R1-R4 are respectively and independently selected from hydrogen, deuterium, substituted or unsubstituted C1-C10 alkyl, substituted or unsubstituted C6-C30 aryl, and substituted or unsubstituted C2-C30 heterocyclicgroups; and at least one of R1-R4 is not hydrogen or deuterium. Compared with the prior art, the benzoheterocycle compound provided by the invention has a relatively high refractive index, and can beused as an organic covering layer material to effectively improve the external quantum efficiency of an organic light-emitting device and relieve the light-emitting angle dependence of the organic light-emitting device; moreover, the benzoheterocycle compound has a relatively small extinction coefficient in a blue light region and hardly absorbs blue light, so that the light-emitting efficiency is improved; furthermore, the benzoheterocycle compound has a relatively deep LUMO energy level, can be used as an electron transport material, and is beneficial to light extraction of a bottom emitting device.
Owner:SHANGHAI TIANMA AM OLED

Organic electroluminescent material taking arylamine structure as central skeleton as well as preparation method and application of organic electroluminescent material

The invention provides an organic electroluminescent material taking an arylamine structure as a central skeleton as well as a preparation method and application of the organic electroluminescent material. The organic electroluminescent material has a structure represented by a formula I which is described in the specification. The arylamine compound provided by the invention has a relatively highrefractive index. When the arylamine compound is used as a cap layer of an organic light-emitting display device, the light extraction efficiency of a top-emitting organic photoelectric device can beimproved. The arylamine compound has a relatively small extinction coefficient in a blue light region and hardly absorbs blue light, so that improvement of the luminous efficiency of the arylamine compound is facilitated; water and oxygen in the external environment are effectively blocked, the OLED display panel is protected from being eroded by water and oxygen, and an organic EL element with high efficiency and long service life can be achieved; the Tg of the organic electroluminescent material is 150 to 165 DEG C; the refractive index under the wavelength of 450 nm ranges from 2.14 to 2.25; the refractive index under the wavelength of 530 nm ranges from 2.08 nm to 2.21 nm; and the refractive index under the wavelength of 635nm is 2.03 to 2.18.
Owner:JILIN OPTICAL & ELECTRONICS MATERIALS

Switching type optical waveguide device based on phase change material and manufacturing method

PendingCN112649999ALow extinction coefficientDifference before and after small phase transitionNon-linear opticsGratingOptical thin film
The invention discloses a switching type optical waveguide device based on a phase change material, which comprises a grating structure, an optical film enhancement layer, a ridge structure, a film structure and a substrate structure. The film structure is arranged on the substrate structure, the ridge structure is arranged in the middle of the upper surface of the film structure, the optical film enhancement layer is arranged on the ridge structure, and the grating structure is arranged on the optical film enhancement layer. A mode wave enters one end surface of the optical waveguide device, passes through a waveguide, and is emitted from the other end surface of the optical waveguide device. By means of the mode, a silicon waveguide can be covered with the material to form a composite waveguide structure, optical signal propagation can be switched among different states by switching the phase state of a phase change material, and a time division multiplexing function and a wavelength division multiplexing function are achieved at the same time by means of one structure.
Owner:上海交大平湖智能光电研究院 +1

Hyacinth-like coated glass and preparation method thereof

The invention discloses hyacinth-like coated glass and a preparation method thereof. The hyacinth-like coated glass comprises a glass substrate, one layer or multi-layers of functional film layers with which the surface of the glass substrate is coated, and a hyacinth-like-mixed and doped film layer with which the surface of the functional film layer is coated, wherein each functional film layer is a tempered low-radiation film layer, or a non-tempered low-radiation film layer or a solar control film layer. The coated hyacinth-like doped film has the high stability, the high temperature resistance, the wear resistance and the high chemical resistance. After glass of the hyacinth-like film layer is tempered, the transmission can be improved, the glass is not burnt like diamond-like carbon, the tempered glass can be well protected in the glass transport and storage processes, the scratch is avoided, and the oxidization is delayed.
Owner:天津南玻节能玻璃有限公司

Organic compound based on carbazole as core and application thereof

The invention discloses an organic compound based on carbazole as a core and application thereof. The compound takes carbazole as the core, benzene rings on the two sides are substituted by benzoxazole or benzothiazole at the same time, and the compound has high glass transition temperature and thermal stability. The evaporation temperature of the material is low, and the decomposition temperatureof the material is higher than the evaporation temperature of the material. The material has a low extinction coefficient and a high refractive index in the field of visible light, and can effectively improve the light extraction efficiency of an OLED device after being applied to the OLED device as a covering layer, thereby improving the light emitting efficiency of the device and reducing the power consumption of the device.
Owner:JIANGSU SUNERA TECH CO LTD

Compound, display panel and display device

The invention discloses a compound. The structure of the compound is shown as the following general formula, wherein definitions of substituent groups in the formula are shown in the specification. The compound provided by the invention can be used as a CPL cap layer, has a relatively high refractive index, and can effectively improve the external quantum efficiency of an organic photoelectric device.
Owner:WUHAN TIANMA MICRO ELECTRONICS CO LTD

Tunable FP optical filter based on lithium niobate film

InactiveCN112394543AMake full use of the photoelectric effectHigh electro-optic coefficientNon-linear opticsOptical coefficientLithium niobate
The invention belongs to the technical field of thin-film narrow-band filters, and particularly relates to a tunable FP optical filter based on a lithium niobate film. The tunable FP optical filter comprises a substrate, a first metal layer, an electro-optic tunable lithium niobate film light transmission layer and a second metal layer. By controlling the voltage between the first metal layer andthe second metal layer, the central wavelength of the tunable FP optical filter of the present invention of a tunable filter can be adjusted. The lithium niobate film is used as the cavity material ofa half-wave resonant cavity in an optical interference film, has a wide light transmission window, a high electro-optical coefficient and good temperature stability, can greatly reduce the optical loss of the narrow-band tunable filter, and realizes the tunable central wavelength. According to the invention, the problems of large optical loss, low tuning speed, temperature sensitivity and the like of an existing MEMS thermo-optical tuned filter can be effectively improved, and the MEMS thermo-optical tuned filter has a good application prospect in the field of optical sensing.
Owner:TIANJIN JINHANG INST OF TECH PHYSICS

Semiconductor fabrication method

A semiconductor fabrication method is disclosed. A substrate having thereon a plurality of semiconductor elements are provided. A dielectric layer is formed on the substrate. A plurality of openings is etched into the dielectric layer to respectively reveal the semiconductor elements. A material layer is coated on the substrate and the material layer fills into the openings. The material layer is then subjected to exposure and development processes to remove a portion of the material layer, thereby forming a material pattern. The material pattern is then polished by chemical mechanical polishing.
Owner:POWERCHIP TECH CORP

Organic compound, display panel and display device

The invention discloses an organic compound. The organic compound has a structural general formula as shown in a formula 1 which is described in the specification. In the formula 1, L1, L2 and L3 arerespectively and independently selected from the group consisting of a single bond and C4-C30 arylene; X1, X2 and X3 are respectively and independently selected from the group consisting of CRa and N;at least one of X1, X2 and X3 is an N atom; Ar1, Ar2 and Ar3 are respectively and independently selected from the group consisting of C4-C60 aryl, a structure as shown in a formula 2 which is described in the specification and a structure as shown in a formula 3 which is described in the specification; at least one of Ar1, Ar2 and Ar3 is a structure as shown in the formula 2; and at least one ofAr1, Ar2 and Ar3 is a structure as shown in the formula 3. In the formula 2, X4, X5, X6 and X7 are respectively and independently selected from the group consisting of CRb and N; at least one of X4, X5, X6 and X7 is an N atom; # represents a connection position; and Ra and Rb are defined in the specification. The organic compound provided by the invention comprises a condensed ring and quinolinazole; the molecule of the organic compound has a relatively flat configuration structure; and the organic compound facilitates coupling extraction of light as a cap layer.
Owner:XIAMEN TIANMA MICRO ELECTRONICS

Chalcogenide phase-material with transparent communication waveband and preparation method thereof

The invention, which belongs to the technical field of microelectronics, relates to a chalcogenide phase-change material with a transparent communication waveband and a preparation method thereof. Thegeneral chemical formula of the components of the chalcogenide phase-change material is GezSb2Tey-S (Se) x, wherein the x is larger than 0 and is less than or equal to 4, the y is larger than or equal to 0 and is less than or equal to 4, and the z is larger than or equal to 0 and is less than or equal to 2. The material can be quickly and reversibly converted between a high refractive index (amorphous state) and a low refractive index (crystalline state), and is a novel phase-change material. More importantly, compared with the traditional Ge2Sb2Te5, the chalcogenide phase-change material disclosed by the invention has extremely low optical absorption in a communication waveband range, rapid reversible phase change can be realized under the action of a laser pulse or a voltage pulse, anda relatively large refractive index difference is kept before and after phase change. Moreover, the material system maintains stable non-volatility, and stably maintains the original state without external excitation, so that a problem of high absorption loss of the traditional phase-change material in the communication waveband is solved; and a novel active regulation and control high-speed communication device is realized.
Owner:SUN YAT SEN UNIV
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