The invention discloses a GaN
transistor for AC / DC and manufacturing method thereof. The GaN
transistor comprises a nucleating layer and a substrate layer; the substrate layer is arranged at the bottom of the nucleating layer, a fluid heat dissipation structure is arranged on the substrate layer, a heat dissipation base is fixedly mounted at the bottom of the substrate layer, a conductive buffer layer is arranged at the top of the nucleating layer, and a drift layer is arranged on the side, away from the nucleating layer, of the conductive buffer layer; an
electron blocking layer is arranged on the side, away from the conductive buffer layer, of the drift layer; a channel layer is arranged on the side, away from the conductive buffer layer, of the
electron blocking layer; a
barrier layer is arranged on the side, away from the
electron blocking layer, of the channel layer, and source electrodes are arranged on the two opposite sides of the top of the
barrier layer. The GaN
transistor has the beneficial effects that the fluid heat dissipation structure is arranged on the substrate layer; the substrate layer is good in heat dissipation performance, and the heat dissipation seat is mounted on the lower substrate layer, so that the
gallium nitride transistor is integrally provided with a heat dissipation structure, with the added fluid heat dissipation structure and the heat dissipation seat, the heat dissipation performance of the
gallium nitride transistor is effectively improved, the use performance of the
gallium nitride transistor is optimized, the service life of the
gallium nitride transistor is prolonged, and the cost is reduced.