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Vertical-cavity surface-emitting laser array for full-color display illumination

A technology of vertical cavity surface emission and laser array, which is applied in the direction of lasers, laser components, semiconductor lasers, etc., to achieve the effects of wide color gamut display lighting applications, simplified process steps, and easy control

Inactive Publication Date: 2017-05-31
XIAMEN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a low-threshold, long-lasing wavelength green vertical cavity surface emitting laser to solve the "green gap" problem and realize a multi-wavelength green vertical cavity surface emitting laser array and wide color gamut Display Lighting Vertical Cavity Surface Emitting Laser Array for Full Color Display Illumination

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  • Vertical-cavity surface-emitting laser array for full-color display illumination
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  • Vertical-cavity surface-emitting laser array for full-color display illumination

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Embodiment Construction

[0018] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0019] see figure 1 , the embodiment of the present invention is provided with a heat dissipation copper substrate 101, a bonding layer 102, a current spreading and P-type electrode 104, a current confinement layer 105, a P-type GaN layer 106, a quantum dot active region 107, and an N-type GaN layer from bottom to top. layer 108 and N-type electrode 109; the N-type GaN layer 108, the quantum dot active region 107 and the P-type GaN layer 106 are sequentially grown on the heat dissipation copper substrate 101, and the current confinement layer 105 is deposited on the P-type GaN layer 106 A P-type current injection hole is opened in the current confinement layer 105, and the current expansion and P-type electrode 104 are gr...

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Abstract

The invention discloses a vertical-cavity surface-emitting laser array for full-color display illumination and relates to semiconductor lasers. The vertical-cavity surface-emitting laser array is provided with a radiator copper substrate, a bonding layer, a current spreading and P-type electrode, a current limit layer, a P-type GaN layer, a quantum dot active area, an N-type GaN layer and an N-type electrode from bottom to top. The N-type GaN layer, the quantum dot active area and the P-type GaN layer sequentially grow on the radiator copper substrate; the current limit layer deposits on the P-type GaN layer and is provided with a P-type current injection hole; the current spreading and P-type electrode grows in the injection hole; the P-type electrode and a bottom distributed Bragg reflector are deposited in the current spreading and P-type electrode; the bonding layer is bonded between the bottom distributed Bragg reflector and the radiator copper substrate; the N-type electrode and a top distributed Bragg reflector are deposited on the N-type GaN layer; an a resonant cavity is formed between the bottom distributed Bragg reflector and the top distributed Bragg reflector.

Description

technical field [0001] The present invention relates to semiconductor lasers, and more particularly to vertical cavity surface emitting laser arrays for full-color display illumination. Background technique [0002] Compared with solid-state lasers and gas lasers, semiconductor lasers have received more attention and research due to their small size, low power consumption, and low cost. Based on the forbidden band width of different semiconductor materials, semiconductor lasers can cover a wide spectral range from ultraviolet to infrared. At present, semiconductor lasers with different wavelengths have been successfully developed and commercialized. For example, 2-5μm lasers are used in biomedical applications, 1.3-1.55μm lasers are used in optical communication applications, 850-1000nm lasers are used in optical interconnection technology, 405- 450nm lasers are used in applications such as lithography and lighting. However, in the green light band, especially 500-600nm, t...

Claims

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Application Information

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IPC IPC(8): H01S5/183H01S5/187
CPCH01S5/18397H01S5/187
Inventor 郑志威张保平沃纳·霍夫曼梅洋
Owner XIAMEN UNIV
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