70results about How to "High process integration" patented technology

The invention provides a grid driving circuit and method, an array substrate line driving circuit and a display device. The grid driving circuit is connected with a line pixel unit, wherein the line pixel unit comprises a line pixel driving module and a light-emitting element, the line pixel driving module and the light-emitting element are connected with each other, the line pixel driving module comprises a driving transistor, a driving module and a compensation module, a grid scanning signal is connected to the compensation module, and a driving level is connected to the driving module. The grid driving circuit further comprises a line pixel control unit, wherein the line pixel control unit is used for providing grid scanning signals for the compensation module and providing the driving level for the driving module to further control the compensation module to compensate for the threshold voltage of the driving transistor and control the driving module to drive the light-emitting element. According to the grid driving circuit and method, the array substrate line driving circuit and the display device, the pixel threshold voltage and the driving pixel can be compensated at the same time, and the integration level is improved.

The invention provides an array substrate, a manufacturing method thereof, and a display device, which relate to the technical field of display. Through the manufacturing method of the array substrate, an ion activation process of LTPS TFT (Thin Film Transistor) and a process of converting an amorphous state of Oxide TFT into a mini-crystal state are integrated into a whole. The manufacturing method of the array substrate comprises the steps of forming a first active layer, wherein the material of the first active layer is polycrystalline silicon; at least carrying out ion implantation into a doping area of the first active layer, wherein the doping area is used for being electrically connected with a corresponding source electrode and a corresponding drain electrode; forming a second active layer, wherein the material of the second active layer is amorphous metallic oxide; after at least carrying out ion implantation into the doping area of the first active layer, and forming the second active layer, adopting an activation process so as to activate ion implanted into the first active layer and turn the material of the second active layer from the amorphous state to the mini-crystal state. The manufacturing method provided by the invention is applicable to manufacturing the array substrate and the display device comprising the array substrate.

The application discloses an integrated touch display device. The display device comprises a display panel and a backlight module, wherein the display panel comprises a first substrate and a second substrate which are opposite to each other, one of the first substrate and the second substrate is provided with strip-shaped touch emission electrodes arranged in parallel, and the other of the first substrate and the second substrate is provided with strip-shaped touch receiving electrodes arranged in parallel; the extension directions of the strip-shaped touch emission electrode and the strip-shaped receiving electrode are intersected; the strip-shaped touch emission electrode or the strip-shaped receiving electrode is multiplexed as a first pressure electrode; the backlight module comprises a second pressure electrode; a gap is formed between the display panel and the backlight module; the first pressure electrode, the second pressure electrode and the gap form a pressure capacitor; the pressure capacitor is used for sensing the pressure exerted on the integrated touch display device. The integrated touch display device is capable of realizing pressure detection function, and capable of simplifying the manufacture process and reducing the cost.

The invention relates to a desulfurization and denitration system by an ozone oxidation double-tower ammonia method. The desulfurization and denitration system sequentially comprises a hydrogen peroxide spraying device, a draught fan, an ozone spraying device, a flue gas mixing device, a front adsorption tower, a rear adsorption tower, a cyclone separator, a centrifugal separator and a drier, wherein the hydrogen peroxide spraying device is arranged at an outlet of a boiler coal economizer, the outlet of the boiler coal economizer is connected to the draught fan through an air preheater and a dust remover and is connected to the front adsorption tower; the ozone spraying device is mounted in front of an inlet flue of the front adsorption tower; and the flue gas mixing device is arranged between the ozone spraying device and the inlet flue of the front adsorption tower. The desulfurization and denitration system disclosed by the invention has the beneficial effects that the integration degree of a technology is high, the desulfurization and the denitration are integrated, the double-tower structure are stable in properties, the desulfurization efficiency and the denitration efficiency are high, the source of an adsorption tower machine is reliable, the added value of by-products is high, little secondary pollution exists, and the operation cost is low.

The invention relates to a refrigeration structure for three-dimensional encapsulation of micro-electronics in the micro-electronic encapsulation field and a preparation method thereof. The refrigeration structure comprises two laminated chips, two longitudinal metal heat dissipation passage arrays and a transverse metal heat dissipation passage array, wherein the lower surface of an upper laminated chip and the upper surface of a lower laminated chip are respectively provided with one longitudinal metal heat dissipation passage array; the two longitudinal metal heat dissipation passage arraysare connected by the transverse metal heat dissipation passage array. The preparation method of the invention aiming at heat dissipation passages of local hot spots can selectively adopt metal material with high thermal conductivity as heat dissipation passages on one hand, and can adopt a feasible shortest heat dissipation route aiming at the local hot spots on the other hand, thus increasing the heat dissipation efficiency of the laminated high integration level chip to the largest extent. The invention has high technology integration level and is easy to realize.

The invention discloses an electronic locking device. The electronic locking device comprises a shell, a power mechanism arranged in the shell, a transmission mechanism, a spring bolt sliding block, afeeding screw rod, a self-locking elastic piece, a reset mechanism and an unlocking action mechanism, wherein the power mechanism, the transmission mechanism, the spring bolt sliding block, the feeding screw rod, the self-locking elastic piece, the reset mechanism and the unlocking action mechanism are arranged in the shell. A locking mechanism provided by the invention is ingenious in concept, the transmission mechanism is ingenious in matching, the safety in a normal state is high, manual unlocking can be effectively prevented, and when emergency manual unlocking is needed, the transmissionmechanism of the electronic locking device can be safely and reliably unlocked; the electronic locking device is high in process integration level, higher in process automation degree, low in cost and higher in protection grade, compared with an former similar product, the structure is simple, the appearance size is small, the cost is low, and a high protection grade can be met; according to theelectronic locking device, the problems that a spring bolt is easily pulled out and the manual unlocking operation is partially followed are solved, and the system misjudgment probability in the charging and locking process is reduced, and the problem that manual unlocking mechanism with internal parts of an automobile body is interfered due to the rotation of an operation handle at the tail end of the manual unlocking mechanism when electric locking and unlocking at each time is avoided.

A light-erasable embedded memory device and a method for manufacturing the same are provided in the present invention. The light-erasable embedded memory device includes a substrate with a memory region and a core circuit region, a floating gate on the memory region of the substrate, at least one light-absorbing film above the floating gate, wherein at least one light-absorbing film is provided with dummy via holes overlapping the floating gate, and a dielectric layer on the light-absorbing film and filling up the dummy via holes.

The invention provides an MWT solar battery and a manufacturing method of the MWT solar battery. The manufacturing method of the MWT solar battery comprises the following steps that antireflection films in a designated area on the back face of a substrate of the MWT solar battery are removed through laser to form an non-antireflection film area; the substrate of the MWT solar battery is placed into a strong alkaline solution to be cleaned, and the back field of the non-antireflection film area, laser damage and material passing hole interior damage are removed. In the manufacturing method of the MWT solar battery, the antireflection films which are needed in MWT solar battery production are used as masks, therefore other masks do not need to be manufactured additionally, and extra processes, equipment and materials do not need to be added. Compared with the prior art, the MWT solar battery is high in process integration degree, simple in process and beneficial to cost controlling.

Disclosed is a formation method of a metal grid electrode. The formation method of the metal grid electrode comprises that the formation method of the metal grid electrode is provided with a semi-conductor substrate. The semi-conductor substrate comprises a first transistor area and a second transistor area. A replacing grid electrode structure is formed on the semi-conductor substrate. The replacing grid electrode structure is arranged in the first transistor area and the second transistor area at the same time. Ion implantation is carried out in the replacing grid electrode structure of the first transistor area. Tetramethylammonium hydroxide liquor is used for eliminating the replacing grid electrode structure of the second transistor area. The ion implantation is not carried out in the second transistor area. A second groove is formed. A second metal grid electrode is formed in the second groove. The replacing grid electrode structure of the first transistor area is eliminated. The ion implantation is carried out in the first transistor area. A first groove is formed. A first metal grid electrode is formed in the first groove. Due to the fact that the replacing grid electrode structure is etched selectively by the tetramethylammonium hydroxide liquor, a perpendicular groove side wall can be achieved by taking advantage of injecting the ion, thus technological requirements can be met by the follow-up formed metal grid electrode.

The invention discloses an automatic heating and bending device, and relates to the technical field of semiconductor part manufacturing. The device comprises a rack, a control cabinet, a feeding mechanism arranged at the feeding end of the rack, a bending assembly arranged on the rack and a heater arranged between the feeding mechanism and the bending assembly. According to the automatic heating and bending device, a connecting rod mechanism and a telescopic die core which are used for assisting in product bending forming are arranged on the back face of a stamping mechanism, and after the stamping mechanism completes stamping work and resets, the telescopic die core is automatically driven by the connecting rod mechanism to stretch out to press a workpiece to match a movable die to bend the workpiece again, therefore, one-time forming of workpiece manufacturing is achieved, production efficiency is improved, and procedure integration is high.

The invention provides a diaphragm coating device and a diaphragm coating method. The diaphragm coating device comprises a first coating device, a second coating device and a third coating device which are sequentially connected, wherein at least two of the first coating device, the second coating device and the third coating device are different in type; and the first coating device, the second coating device and the third coating device are independently a micro-gravure coating device, an extrusion coating device or a wire rod coating device. The method comprises the following steps of: enabling a base film to sequentially pass through the first coating device, the second coating device and the third coating device, and starting the corresponding coating devices to coat according to needs, thereby obtaining a diaphragm, wherein the number of coating layers is one, two or three. According to the device provided by the invention, three different coating modes can be integrated in the same equipment, so that one or more coatings can be simultaneously coated, the production efficiency of the coating equipment is improved, and the energy consumption of the equipment is reduced.

Disclosed is a formation method of a metal grid electrode. The formation method of the metal grid electrode comprises that a semi-conductor substrate is provided. The semi-conductor substrate comprises a first transistor area and a second transistor area. A polycrystalline silicon thin film is formed on the semi-conductor substrate. Ion implantation is carried out on a polycrystalline silicon thin film in the first transistor area. Part of the polycrystalline silicon thin film is eliminated so that a replacing grid electrode structure is formed. The replacing grid electrode structure is arranged in the first transistor area and the second transistor area at the same time. Tetramethylammonium hydroxide liquor is used for eliminating the replacing grid electrode structure of the second transistor area. The ion implantation is not carried out in the second transistor area. A second groove is formed. A second metal grid electrode is formed in the second groove. The replacing grid electrode structure of the first transistor area is eliminated. The ion implantation is carried out in the first transistor area. A first groove is formed. A first metal grid electrode is formed in the first groove. Due to the fact that the replacing grid electrode structure is etched selectively by the tetramethylammonium hydroxide liquor, a perpendicular groove side wall can be achieved by taking advantage of the ion implantation, thus technological requirements can be met by the follow-up formed metal grid electrode.

The invention provides a spherical calcium chloride dihydrate production process. The production process comprises the following steps: 1) preparing seed crystals; 2) atomizing feed liquid; 3) performing rotary granulation; 4) performing fluidized drying; 5) screening and collecting. The problems that in the prior art, in a production process, crystals are prone to breakage, the yield is low, caking is prone to occurring in the production process, consequently, operation is unstable, and long-time continuous production cannot be achieved are effectively solved. According to the process, a fluidization air distribution plate is arranged in a rotary granulation device, granulation and drying processes are completed in the same equipment, particle fragmentation is effectively reduced, meanwhile, the drying and granulation processes are separately adjusted, caking is avoided, long-time continuous production can be guaranteed, the whole process is high in integration degree, and the production efficiency is greatly improved.