The invention provides a JCD integrated device integrated with VDMOS and a preparation method thereof, and belongs to the technical field of power
semiconductor integration. The manufacturing of
JFET,
CMOS and VDMOS on the same
chip is realized by the invention for the first time; meanwhile, passive elements such as a poly
capacitor, a poly
resistor and a poly
diode can be integrated with the
JFET,
CMOS and VDMOS to form a circuit. The advantages of high-switch speed and
high voltage resistance of the VDMOS, excellent
simulation characteristics, low-
noise characteristics, temperature stabilityand anti-
radiation capability of the
JFET devices, high integrality of the
CMOS part and the like are integrated by the invention; meanwhile, high flexibility is brought to the power
circuit design.The whole process provided by the invention uses relatively few
mask templates; the process level
reusability is high; the manufacturing
cost control is facilitated; the high-low-
voltage compatibility, high performance, high efficiency and high reliability are realized on a limited
chip area; the
chip manufactured by using the JCD integration technology has good comprehensive performance and is favorable for the development of the
single chip power
system integration.