51results about How to "Density" patented technology

The present invention provides a semiconductor device that has a shorter distance between the bit lines and easily achieves higher storage capacity and density, and a method of manufacturing such a semiconductor device. The semiconductor device includes: first bit lines formed on a substrate; an insulating layer that is provided between the first bit lines on the substrate, and has a higher upper face than the first bit lines; channel layers that are provided on both side faces of the insulating layer, and are coupled to the respective first bit lines; and charge storage layers that are provided on the opposite side faces of the channel layers from the side faces on which the insulating layers are formed.

The present invention provides an apparatus and a method for fractionating gypsum slurry which can surely control the density of the gypsum slurry fractionated from the mixer (fractionated slurry), which can restrict change of the flow rate of the fractionated slurry, and which can reduce the consumption of foam or foaming agent. The fractionation apparatus (30) fractionates the gypsum slurry from a mixer (4) for mixing calcined gypsum and water. The mixer has a hollow connector section (50), which allows the gypsum slurry to flow from a mixing area inside of the mixer into a chute section (5), and the chute section (5) discharging the inflow of gypsum slurry through its slurry discharge port onto a gypsum board liner paper. The fractionation apparatus has a slurry fractionation port (33) opening to the chute section or the hollow connector section, and causes a part of the gypsum slurry in the chute or hollow connector section to be delivered to a slurry delivery conduit (11,13,19).

A cell phone including a built-in antenna, the cell phone having a reduced physical size of an antenna element, a decreased weight and satisfying an impact resistance, and suppressing a variation in a dimension caused by mass production and considering an actual use state in which a hand or the like approaches. A dielectric between an antenna element and a ground is a support member of a cyclo-olefin polymer in a plating grade having an impact resistance which is obtained by blending styrene type rubber, polyolefin type rubber (elastomer) or both of them, and the antenna element is constituted by a plating formed on a main surface of the dielectric.

The invention discloses calcium-based CO2 adsorbent.The calcium-based CO2 adsorbent is spherical particles with the diameter of 0.3-3.5 mm and are prepared from an alga raw material and a calcium-based raw material which are mixed uniformly by the mass ratio of 0.001:1-0.03:1.The calcium-based raw material is one or more of calcium hydroxide, calcium carbonate or slaked lime.The invention further discloses a preparing method of the calcium-based CO2 adsorbent.0.1-3% of the alga raw material is doped in the calcium-based raw material, a pelleting method is optimized, cycling stability of the calcium-based CO2 adsorbent is improved, and the preparing method is simple and suitable for mass production.

To provide a manufacturing method of a microcrystalline silicon film having both high crystallinity and high film density. In the manufacturing method of a microcrystalline silicon film according to the present invention, a first microcrystalline silicon film that includes mixed phase grains is formed over an insulating film under a first condition, and a second microcrystalline silicon film is formed thereover under a second condition. The first condition and the second condition are a condition in which a deposition gas containing silicon and a gas containing hydrogen are used as a first source gas and a second source gas. The first source gas is supplied under the first condition in such a manner that supply of a first gas and supply of a second gas are alternately performed.

The invention relates to an eucalyptus bark artificial sound-insulation fibreboard and a manufacture method thereof. The eucalyptus bark artificial sound-insulation fibreboard belongs to veneers made of particles or fibers and characterized by being formed by using eucalyptus bark fibers as raw materials and comprising the steps of adhering and thermally pressing. The invention provides an eucalyptus bark artificial sound-insulation fibreboard with small density, strong strength, good sound-insulation effect and lower cost and the manufacture method thereof. Scraps generated by an eucalyptus bark wood-processing device are utilized, which saves the resources, protects the environment, improves the strength of the artificial sound-insulation fibreboard, optimizes the sound-insulation and heat-insulation effects and decreases the production cost. The prepared eucalyptus bark artificial sound-insulation fibreboard with the thickness of 15mm reaches the following technical indexes: the density is larger than or equal to 450 kg / m<3>, the static bending strength parallel to grain is larger than or equal to 30 MPa, the static bending strength perpendicular to grain is larger than or equal to 20 MPa, the elasticity modulus parallel to grain is larger than or equal to 4000 MPa, the elasticity modulus perpendicular to grain is larger than or equal to 3000 MPa, and the formaldehyde release amount accords with the Eo standard. The invention is suitable for sound-insulation and heat-insulation doors, windows and wall interlayers of civilian constructions, office spaces, theatres and hotels.

The embodiment of the invention adopts the following technical scheme, i.e. a novel summer corn SRP class group selfing line breeding method. The method is characterized in that F1 generation can be formed by hybridizing every two of a P class group corn, an Reid class group corn and an S class group corn; three or two F1 generations are hybridized to form an SRP class group; the SRP class group is subjected to back cross breeding or complex hybridization to breed a selfing line. The selfing line bred by the SRP class group breeding method has the characteristics of dense-resistance, disease resistance, lodging resistance and high combining ability; grains are hard grains or semi-hard grains; the self yield is that the grain weight of single spike is about 100g; the selfing line has the characteristics of compact plant type, dense planting resistance, high temperature resistance, rain waterlogging resistance, high adaptability to bad environment, and the like.

A device and a method of thermal management. In one embodiment, the device includes an integrated circuit, including: (1) a conductive region configured to be connected to a voltage source, (2) a transistor having a semiconductor channel with a controllable conductivity and (3) first and second conducting leads connecting to respective first and second ends of said channel, wherein a charge in the conductive region is configured to substantially raise an electrical potential energy of conduction charge carriers in the semiconductor channel and portions of said leads are located where an electric field produced by said charge is substantially weaker than near the semiconductor channel.

In a film substrate (FB) including a film base material (1) and conductor wiring (23) that is formed on the film base material (1), the conductor wiring (23) is arranged such that the conductor wiring thickness of an external connection portion on the film substrate to which another panel or substrate is connected is thicker than the conductor wiring thickness of conductor wiring portions (bent portions) (25) at other positions.

The invention discloses a slitting machine, which comprises a slitting roller, a slitting shaft, a pressure roller, a retardation plate, a control panel, a motor and a winding, a slitting knife is installed on the slitting roller, and a slitting knife is installed on the slitting roller. The shaft is arranged below the slitting roller, and a collar is installed on the slitting shaft, the pressure roller is installed on the left side of the slitting shaft, and an arc roller is installed on the lower left of the pressure roller, and the arc roller Rollers are installed, and an unwinding device is installed on the lower left side of the arc roller. The unwinding device is connected to the frame through bearings. A motor is installed on the left side of the frame, and a switch is arranged above the motor. The winding is installed on the frame, and the aluminum guide roller is installed on the winding, and the nitrile rubber coating is fixed on the aluminum guide roller. The slitting machine of the present invention is equipped with a new type of rubber roller, which is easy to clean and hygienic, and is not easy to be worn out. The density of the aluminum layer is well protected, and the flattening effect is better, so that the quality and efficiency of the product are greatly improved.

Provided is iron silicide powder in which the content of oxygen as the gas component is 1500 ppm or less, and a method of manufacturing such iron silicide powder including the steps of reducing iron oxide with hydrogen to prepare iron powder, heating the iron powder and Si powder in a non-oxidizing atmosphere to prepare synthetic powder containing FeSi as its primary component, and adding and mixing Si powder once again thereto and heating this in a non-oxidizing atmosphere to prepare iron silicide powder containing FeSi2 as its primary component. The content of oxygen as the gas component contained in the iron silicide powder will decrease, and the iron silicide powder can be easily pulverized as a result thereof. Thus, the mixture of impurities when the pulverization is unsatisfactory will be reduced, the specific surface area of the iron silicide powder will increase, and the density can be enhanced upon sintering the iron silicide powder.

An optical device includes: a substrate having a dielectric layer and a plurality of metal particles; and an organic molecular layer formed by self-assembly on at least either the surface of the dielectric layer or the surfaces of the metal particles. In the organic molecular layer, a first organic molecule and a second organic molecule are alternately arranged in a first direction, and the chain length of an organic group of the first organic molecule and the chain length of an organic group of the second organic molecule are different from each other.

According to the present invention there is provided a button assembly, comprising, an actuator member; a base member having a cavity defined therein which can receive a least a part of the actuator member; a flexible film which comprises piezoelectric material, wherein the piezoelectric material is preferably dipolar particles; a first electrode which is located between the piezoelectric material of the flexible film and the actuator member, and a second electrode which is located between the piezoelectric material of the flexible film and the base member, and wherein the flexible film is arranged to overlay the cavity in the base member, and to be interposed between the base member and the actuator member, such that moving at least a part of the actuator member into the cavity of the base member will cause the film to stretch thereby generating an electrical signal in the first and second electrodes.

In a method for forming silicon nano-crystals using plasma ion implantation and a semiconductor memory device using the same, silicon nano-crystals may be formed using plasma ion implantation. An insulating layer may be formed on a substrate, and ions may be implanted into the insulating layer using hydrogen and a gas including silicon. Silicon nano-crystals may be formed using a heat treatment.

The invention relates to the field of ceramic tile production, provides an antifouling digital protection glaze, and aims to solve the problem of poor antifouling effect of a glaze layer. The antifouling digital protection glaze comprises 11-35 parts by mass of flint clay, 1-5 parts by mass of muscovite, 40-50 parts by mass of quartz stone, 7-20 parts by mass of kaolin, 1-5 parts by mass of plant ash, 4-8 parts by mass of calcined talc, 2-5 parts by mass of ball clay, 1-4 parts by mass of zeolite, 1-6 parts by mass of garnet, 1-5 parts by mass of pyrophyllite, 20-28 parts by mass of albite, 1-3 parts by mass of calcium carbonate, 0.5-1 part by mass of barium carbonate, 1-2 parts by mass of borax and 6-10 parts by mass of zirconite. According to the invention, the formed glaze layer is high in density and good in antifouling effect.

To provide a manufacturing method of a microcrystalline silicon film having both high crystallinity and high film density. In the manufacturing method of a microcrystalline silicon film according to the present invention, a first microcrystalline silicon film that includes mixed phase grains is formed over an insulating film under a first condition, and a second microcrystalline silicon film is formed thereover under a second condition. The first condition and the second condition are a condition in which a deposition gas containing silicon and a gas containing hydrogen are used as a first source gas and a second source gas. The first source gas is supplied under the first condition in such a manner that supply of a first gas and supply of a second gas are alternately performed.

The invention provides a CVD machine table, and the machine table comprises a plasma spray head which is used for spraying plasma; and a plasma adjusting device which is used for changing the direction of the plasma acting on the wafer to be processed into a vertical direction. That is to say, the plasma adjusting device enables the direction of the plasma acting on the to-be-processed wafer to be changed into the vertical direction, so the influence of plasma processing on the side wall can be reduced to a great extent, and the film density of the side wall is enabled to be more loose. Moreover, the plasmas can reach the bottom area more easily, so that the density of the film layers at the top and the bottom is higher, and the density difference of the film layers in the plane area and the side wall area is increased to a great extent; therefore, in the WET process, the film layer on the top side wall is easier to etch, and under the condition that the top side wall is etched, the film layer at the bottom can keep good morphology, so the product yield is improved to a great extent.