51results about How to "Density" patented technology

Laser-enhanced visual simultaneous localization and mapping (SLAM) is disclosed. A laser line is generated, the laser line being incident on an object and / or environment. While the laser line is incident on the object, one or more images of the object with the laser line incident on the object are captured. The camera is localized based on one or more characteristics of the laser line incident on the object. In some examples, improved feature localization provided by the laser line provides more accurate camera localization, which, in turn, improves the accuracy of the stitched mesh of the object / environment. As such, the examples of the disclosure provide for improved camera localization and improved three-dimensional mapping.

The invention provides a ceramic composite material forming method and a ceramic composite material, and relates to the technical field of ceramic composite material forming. According to the forming method, fiber is soaked into a sizing agent in advance, weaving is directly performed with the sizing agent, the sizing agent is continuously pouring into gaps formed between fiber during weaving, a prefab formed by weaving does not need soaking, and drying and sintering are directly performed, so that the ceramic composite material can be obtained. The forming method cancels a required process of repeatedly soaking the prefab in the traditional forming technology, greatly reduces the workload, shortens the production period, further reduces the operation cost, and improves the defects of complex forming technology, high cost and long production period in the traditional forming technology; the ceramic composite material prepared through the forming method can easily meet the required density. The invention further provides a ceramic composite material. The ceramic composite material has good density.

An optical device includes: a substrate having a dielectric layer and a plurality of metal particles; and an organic molecular layer formed by self-assembly on at least either the surface of the dielectric layer or the surfaces of the metal particles. In the organic molecular layer, a first organic molecule and a second organic molecule are alternately arranged in a first direction, and the chain length of an organic group of the first organic molecule and the chain length of an organic group of the second organic molecule are different from each other.

A cell phone including a built-in antenna, the cell phone having a reduced physical size of an antenna element, a decreased weight and satisfying an impact resistance, and suppressing a variation in a dimension caused by mass production and considering an actual use state in which a hand or the like approaches. A dielectric between an antenna element and a ground is a support member of a cyclo-olefin polymer in a plating grade having an impact resistance which is obtained by blending styrene type rubber, polyolefin type rubber (elastomer) or both of them, and the antenna element is constituted by a plating formed on a main surface of the dielectric.

A plurality of past cross-sectional images are reconstructed from a plurality of past tomosynthesis images obtained by radiographing a subject by tomosynthesis. A plurality of current cross-sectional images are reconstructed from a plurality of current tomosynthesis images obtained by radiographing the subject by tomosynthesis. Each of the plurality of past cross-sectional images is superimposed on a corresponding current cross-sectional image included in the plurality of current cross-sectional images for each cross-sectional plane so as to align structural elements therein. When the structural elements are aligned, a subtraction image between the corresponding past cross-sectional image and current cross-sectional image is produced.

The invention discloses calcium-based CO2 adsorbent.The calcium-based CO2 adsorbent is spherical particles with the diameter of 0.3-3.5 mm and are prepared from an alga raw material and a calcium-based raw material which are mixed uniformly by the mass ratio of 0.001:1-0.03:1.The calcium-based raw material is one or more of calcium hydroxide, calcium carbonate or slaked lime.The invention further discloses a preparing method of the calcium-based CO2 adsorbent.0.1-3% of the alga raw material is doped in the calcium-based raw material, a pelleting method is optimized, cycling stability of the calcium-based CO2 adsorbent is improved, and the preparing method is simple and suitable for mass production.

In a film substrate (FB) including a film base material (1) and conductor wiring (23) that is formed on the film base material (1), the conductor wiring (23) is arranged such that the conductor wiring thickness of an external connection portion on the film substrate to which another panel or substrate is connected is thicker than the conductor wiring thickness of conductor wiring portions (bent portions) (25) at other positions.

To provide a manufacturing method of a microcrystalline silicon film having both high crystallinity and high film density. In the manufacturing method of a microcrystalline silicon film according to the present invention, a first microcrystalline silicon film that includes mixed phase grains is formed over an insulating film under a first condition, and a second microcrystalline silicon film is formed thereover under a second condition. The first condition and the second condition are a condition in which a deposition gas containing silicon and a gas containing hydrogen are used as a first source gas and a second source gas. The first source gas is supplied under the first condition in such a manner that supply of a first gas and supply of a second gas are alternately performed.

An improved process for the preparation of acyl aromatic ethers useful as important intermediates for drugs and pharmaceuticals by reacting an aromatic ether with an acylating agent selected from a C2-C8 acid anhydrides, employing nano- and microcrystalline zeolite beta as catalyst is disclosed.

The invention relates to an eucalyptus bark artificial sound-insulation fibreboard and a manufacture method thereof. The eucalyptus bark artificial sound-insulation fibreboard belongs to veneers made of particles or fibers and characterized by being formed by using eucalyptus bark fibers as raw materials and comprising the steps of adhering and thermally pressing. The invention provides an eucalyptus bark artificial sound-insulation fibreboard with small density, strong strength, good sound-insulation effect and lower cost and the manufacture method thereof. Scraps generated by an eucalyptus bark wood-processing device are utilized, which saves the resources, protects the environment, improves the strength of the artificial sound-insulation fibreboard, optimizes the sound-insulation and heat-insulation effects and decreases the production cost. The prepared eucalyptus bark artificial sound-insulation fibreboard with the thickness of 15mm reaches the following technical indexes: the density is larger than or equal to 450 kg / m<3>, the static bending strength parallel to grain is larger than or equal to 30 MPa, the static bending strength perpendicular to grain is larger than or equal to 20 MPa, the elasticity modulus parallel to grain is larger than or equal to 4000 MPa, the elasticity modulus perpendicular to grain is larger than or equal to 3000 MPa, and the formaldehyde release amount accords with the Eo standard. The invention is suitable for sound-insulation and heat-insulation doors, windows and wall interlayers of civilian constructions, office spaces, theatres and hotels.

Provided are a semiconductor device capable of reducing stress due to a density difference in the arrangement of bumps, and a method of manufacturing the semiconductor device. The semiconductor device includes: a wiring board including an electrode terminal group; a semiconductor chip including a bump formation surface where a bump group is formed and being mounted on the wiring board by using the bump group. The bump formation surface includes a first region where an area density of a region having bumps arranged therein is a first density, a second region where an area density of a region having bumps arranged therein is a second density lower than the first density, and a third region provided in a border portion between the first and second regions. In the third region, an area density of a region having bumps arranged therein is above the second density and below the first density.

The embodiment of the invention adopts the following technical scheme, i.e. a novel summer corn SRP class group selfing line breeding method. The method is characterized in that F1 generation can be formed by hybridizing every two of a P class group corn, an Reid class group corn and an S class group corn; three or two F1 generations are hybridized to form an SRP class group; the SRP class group is subjected to back cross breeding or complex hybridization to breed a selfing line. The selfing line bred by the SRP class group breeding method has the characteristics of dense-resistance, disease resistance, lodging resistance and high combining ability; grains are hard grains or semi-hard grains; the self yield is that the grain weight of single spike is about 100g; the selfing line has the characteristics of compact plant type, dense planting resistance, high temperature resistance, rain waterlogging resistance, high adaptability to bad environment, and the like.

A device and a method of thermal management. In one embodiment, the device includes an integrated circuit, including: (1) a conductive region configured to be connected to a voltage source, (2) a transistor having a semiconductor channel with a controllable conductivity and (3) first and second conducting leads connecting to respective first and second ends of said channel, wherein a charge in the conductive region is configured to substantially raise an electrical potential energy of conduction charge carriers in the semiconductor channel and portions of said leads are located where an electric field produced by said charge is substantially weaker than near the semiconductor channel.

An inkjet printer includes a print head, a nozzle position and a print control section. The print head includes a plurality of nozzles to eject ink. The nozzle position specifying section is configured to specify a position of a first nozzle of the plurality of nozzles that exhibits defective ejection of the ink. The print control section is configured to eject the ink from the plurality of nozzles based on image data. The print control section is configured to determine a density of second pixels, which are positioned adjacent to first pixels to be printed by the first nozzle that was specified, and a density of third pixels, which are positioned adjacent to the second pixels except the first pixels, based on the image data, and to correct to increase the density of the second pixels and to reduce the density of the third pixels.

A semiconductor device includes a wiring board, a semiconductor chip mounted on the wiring board, the semiconductor chip including a bump formation surface, a plurality of first bumps provided within a first region of the bump formation surface, the first bumps being arranged in a first area density, a plurality of second bumps provided within a second region of the bump formation surface, the second bumps being arranged in a second area density, and a plurality of third bumps arranged between the first region and the second region of the bump formation surface in a two-dimensional array. The plurality of third bumps are arranged in a third area density being higher than the second area density and being lower than the first area density.

In a film substrate (FB) including a film base material (1) and conductor wiring (23) that is formed on the film base material (1), the conductor wiring (23) is arranged such that the conductor wiring thickness of an external connection portion on the film substrate to which another panel or substrate is connected is thicker than the conductor wiring thickness of conductor wiring portions (bent portions) (25) at other positions.

The invention discloses a splitting machine. The splitting machine comprises a splitting roller, a splitting shaft, a pressure roller, a blocking disc, a control panel, a motor and a winder. Splitting cutters are installed on the splitting roller. The splitting shaft is arranged below the splitting roller and provided with lantern rings. The pressure roller is installed on the left side of the splitting shaft. An arc-shaped roller is installed under the left portion of the pressure roller and provided with idler wheels. An unwinding device is installed under the left portion of the arc-shaped roller and connected with a machine frame in a rotating mode through a bearing. The motor is installed on the left side of the machine frame, and a switch is arranged above the motor. The winder is installed on the machine frame. An aluminum guide roller is installed on the winder, and butyronitrile adhesive cladding is fixed to the aluminum guide roller. The splitting machine is provided with a novel rubber roller which is easy to clean, sanitary and not prone to abrasion, the compactness of an aluminum layer is welled protected, the flattening effect is better, and the quality and efficiency of products are improved to a greater extent.

Provided is iron silicide powder in which the content of oxygen as the gas component is 1500 ppm or less, and a method of manufacturing such iron silicide powder including the steps of reducing iron oxide with hydrogen to prepare iron powder, heating the iron powder and Si powder in a non-oxidizing atmosphere to prepare synthetic powder containing FeSi as its primary component, and adding and mixing Si powder once again thereto and heating this in a non-oxidizing atmosphere to prepare iron silicide powder containing FeSi2 as its primary component. The content of oxygen as the gas component contained in the iron silicide powder will decrease, and the iron silicide powder can be easily pulverized as a result thereof. Thus, the mixture of impurities when the pulverization is unsatisfactory will be reduced, the specific surface area of the iron silicide powder will increase, and the density can be enhanced upon sintering the iron silicide powder.

An optical device includes: a substrate having a dielectric layer and a plurality of metal particles; and an organic molecular layer formed by self-assembly on at least either the surface of the dielectric layer or the surfaces of the metal particles. In the organic molecular layer, a first organic molecule and a second organic molecule are alternately arranged in a first direction, and the chain length of an organic group of the first organic molecule and the chain length of an organic group of the second organic molecule are different from each other.

In a method for forming silicon nano-crystals using plasma ion implantation and a semiconductor memory device using the same, silicon nano-crystals may be formed using plasma ion implantation. An insulating layer may be formed on a substrate, and ions may be implanted into the insulating layer using hydrogen and a gas including silicon. Silicon nano-crystals may be formed using a heat treatment.

According to the present invention there is provided a button assembly, comprising, an actuator member; a base member having a cavity defined therein which can receive a least a part of the actuator member; a flexible film which comprises piezoelectric material, wherein the piezoelectric material is preferably dipolar particles; a first electrode which is located between the piezoelectric material of the flexible film and the actuator member, and a second electrode which is located between the piezoelectric material of the flexible film and the base member, and wherein the flexible film is arranged to overlay the cavity in the base member, and to be interposed between the base member and the actuator member, such that moving at least a part of the actuator member into the cavity of the base member will cause the film to stretch thereby generating an electrical signal in the first and second electrodes.

In a method for forming silicon nano-crystals using plasma ion implantation and a semiconductor memory device using the same, silicon nano-crystals may be formed using plasma ion implantation. An insulating layer may be formed on a substrate, and ions may be implanted into the insulating layer using hydrogen and a gas including silicon. Silicon nano-crystals may be formed using a heat treatment.

The invention relates to the field of ceramic tile production, provides an antifouling digital protection glaze, and aims to solve the problem of poor antifouling effect of a glaze layer. The antifouling digital protection glaze comprises 11-35 parts by mass of flint clay, 1-5 parts by mass of muscovite, 40-50 parts by mass of quartz stone, 7-20 parts by mass of kaolin, 1-5 parts by mass of plant ash, 4-8 parts by mass of calcined talc, 2-5 parts by mass of ball clay, 1-4 parts by mass of zeolite, 1-6 parts by mass of garnet, 1-5 parts by mass of pyrophyllite, 20-28 parts by mass of albite, 1-3 parts by mass of calcium carbonate, 0.5-1 part by mass of barium carbonate, 1-2 parts by mass of borax and 6-10 parts by mass of zirconite. According to the invention, the formed glaze layer is high in density and good in antifouling effect.

A method for controlling an amount of dampening solution in a printing unit of a printing press using a computer and a measuring device, includes setting an amount of dampening solution in the printing unit based on data of a current print job, reducing the amount of dampening solution towards a smearing threshold with the computer, recording color measurement values with the measuring device in at least one full tone area with low area coverage and in at least one halftone area with high area coverage on a printing material of the current print job, and stopping the reduction of the amount of dampening solution with the computer when a dot gain of the halftone in areas with high area coverage increases significantly and a density of the full tone in areas with low area coverage increases significantly.

A control-cage that can concentrate the distribution of shot-blasting media, a centrifugal shot-blasting device using this control-cage, and a centrifugal shot-blasting device for throwing abrasive grains, are provided.This control-cage is used for a centrifugal shot-blasting device that rotates an impeller having a plurality of blades at high speed, and that throws shot-blasting media at an object to be processed through the opening of the control-cage by means of the blades. The control-cage is cylindrically shaped and is placed inside the impeller. The opening of the control-cage is made by cutting out the cylindrical part of it in parallel with its central axis. Also, the opening has a quadrangular shape, and has lateral walls located upstream and downstream of the direction of the rotation of the impeller. The upstream wall is made so that the angle between a plane containing the axis and the plane containing both the axis and the inner edge of the upstream wall is larger than the angle between the plane containing the axis and the plane containing both the axis and the outer edge of the upstream wall when they are measured in the direction opposite to the direction of the rotation of the impeller.

The invention provides a CVD machine table, and the machine table comprises a plasma spray head which is used for spraying plasma; and a plasma adjusting device which is used for changing the direction of the plasma acting on the wafer to be processed into a vertical direction. That is to say, the plasma adjusting device enables the direction of the plasma acting on the to-be-processed wafer to be changed into the vertical direction, so the influence of plasma processing on the side wall can be reduced to a great extent, and the film density of the side wall is enabled to be more loose. Moreover, the plasmas can reach the bottom area more easily, so that the density of the film layers at the top and the bottom is higher, and the density difference of the film layers in the plane area and the side wall area is increased to a great extent; therefore, in the WET process, the film layer on the top side wall is easier to etch, and under the condition that the top side wall is etched, the film layer at the bottom can keep good morphology, so the product yield is improved to a great extent.