30results about How to "Break the bottleneck" patented technology

A method of growing single crystal Gallium Nitride on silicon substrate is disclosed including: removing oxide layer of silicon substrate, growing buffer layer of Silicon Carbon Nitride (SiCN), and growing single crystalline Gallium Nitride thin film, characterized in that a buffer layer of SiCN is grown to avoid lattice mismatch which appears when Gallium Nitride is grown directly on silicon substrate, and that Rapid Thermal Chemical Vapor Deposition is adopted to grow SiCN buffer layer, and that Metalorganic Chemical Vapor Deposition is adopted to grow single crystalline GaN thin film. The method of present invention has advantages: a) eliminating lattice mismatch between GaN and Si effectively, b) taking the place of sapphire substrate which has high lattice mismatch, and SiC substrate which is expensive, c) intergrating with maturely-developed, cheap silicon semiconductor industry, d) being compatible with VLSI technology, e) being fabricated in large area substrate, f) no need of isolated etching, g) smaller dimension of each unit GaN element, h) convenience to fabricate vertical-structured LED or LD element, I) promoting GaN elements quality, j) increasing yield, k) reducing manufacturing cost.

The invention provides an intelligent water boiling control system. A tap water inlet end is connected with P ports of a second two-position two-way normally closed solenoid valve and a first two-position two-way normally closed solenoid valve. An A port of the first two-position two-way normally closed solenoid valve is connected with an inlet end of a solar thermal collector. An outlet end of the solar thermal collector is connected with an inlet of an inner-layer water storage tank. An outlet of the inner-layer water storage tank is connected with a P1 port of a two-position three-way solenoid valve. An A port of the second two-position two-way normally closed solenoid valve is connected with an inlet of an outer-layer water storage tank. An outlet of the outer-layer water storage tankis connected with a P2 port of the two-position three-way solenoid valve. A first-stage heat exchange pipeline and a second-stage heat exchange pipeline are arranged on the periphery of the inner-layer water storage tank. A single chip microcomputer controls the on-off states of the two-position three-way solenoid valve, a three-position four-way solenoid valve and a third two-position two-way normally closed solenoid valve to control the first-stage heat exchange pipeline, the second-stage heat exchange pipeline and a heating pipe, and three water temperatures are outputted to meet living needs. The intelligent water boiling control system has the advantages of green energy resource, intelligent control, convenience and quickness, and energy cycle.

The invention discloses a method for improving a nanometerized 1.55V lithium titanate battery. It is to add water and polyvinyl alcohol PVA to dissolve butyl titanate in butyl titanate, and mix lithium hydroxide and terbium nitrate Tb(NO 3 ) 3 The aqueous solution is mixed uniformly in a certain proportion and hydrothermally reacted to obtain the precursor: then the precursor is calcined to obtain the molecular formula Li 0.99 Tb 0.01 Li 1 / 3 Ti 5 / 3 o 4 lithium titanate powder. The capacity of the 1.55V battery utilizing the lithium titanate synthesized by the present invention is 253mAh / g.

The invention discloses an intelligent water boiling device. A running water inlet end is connected with P ports of a second two-position two-way normally closed electromagnetic valve and a first two-position two-way normally closed electromagnetic valve; an A port of the first two-position two-way normally closed electromagnetic valve is connected with an inlet end of a solar heat collector; an outlet end of the solar heat collector is connected with an inlet of an inner layer water storage tank; an outlet of the inner layer water storage tank is connected with a P1 port of a two-position three-way electromagnetic valve; an A port of the second two-position two-way normally closed electromagnetic valve is connected with an inlet of an outer layer water storage tank; an outlet of the outerlayer water storage tank is connected with a P2 port of the two-position three-way electromagnetic valve; a heat exchange system is arranged at the outer periphery of the inner layer water storage tank; a single-chip microcomputer controls connection and disconnection of the two-position three-way electromagnetic valve, a three-position four-way electromagnetic valve and a third two-position two-way normally closed electromagnetic valve to control the heat exchange system and a heating pipe to output three water temperatures for different life demands; and the intelligent water boiling devicehas the advantages of green energy, intelligent control, convenient and quick energy circulation, excellent performances, prominent water saving effect and broad application prospect.

An embodiment of the present invention discloses a co-processing acceleration method, including: receiving a co-processing request message which is sent by a compute node in a computer system and carries address information of to-be-processed data; according to the co-processing request message, obtaining the to-be-processed data, and storing the to-be-processed data in a public buffer card; and allocating the to-be-processed data stored in the public buffer card to an idle co-processor card in the computer system for processing. An added public buffer card is used as a public data buffer channel between a hard disk and each co-processor card of a computer system, and to-be-processed data does not need to be transferred by a memory of the compute node, which avoids overheads of the data in transmission through the memory of the compute node, and thereby breaks through a bottleneck of memory delay and bandwidth, and increases a co-processing speed.

The disclosure provides a preparation method for copper oxide nanowires including following steps: step 01, a conductive layer as an electrode is prepared on a clean substrate, or a clean substrate with a conductive layer is provided directly. Step 02, copper powder is weighed up, and the copper powder is homogeneously mixed with organic carrier. Step 03, mixture prepared in step 02 is printed onto the clean substrate with a conductive layer. Step 04, the substrate after being processed by step 03 is sintered under atmosphere having oxygen, and finally cooled to obtain copper oxide nanowires. Adhesion between the copper oxide nanowires prepared in the present disclosure and the substrate is excellent, the copper oxide nanowires may substantially prepared uniformly in large area and under low temperature, technology flow of coating is decreased, a cost of manufacture is decreased, such that a promising method for bottleneck of commercialization process of the field emission device is provided.