489results about How to "Accurate thickness" patented technology

The invention relates to an intelligent instrument for measuring the tissue thickness. The intelligent instrument comprises a button cell type intelligent thickness measuring clip or an external power supply type intelligent thickness measuring clip, a linear incision anastomat or a manual thickness measuring instrument or an automatic thickness measuring instrument, and a staple anvil. The button cell type intelligent thickness measuring clip comprises an outer shell, a pressing key, waterproof soft glass, an integrated circuit board and a bottom cover. The waterproof soft glass is arranged between the pressing key and the integrated circuit board and covers the surface of the pressing key. A button cell, a power module, a display module, a tissue pressure intensity measuring module, a tissue thickness measuring module, a control module and a wireless transmission module are mounted on the back face of the integrated circuit board. An eddy-current transducer and a pressure sensor are mounted on the front face of the integrated circuit board. The button cell type intelligent thickness measuring clip is matched with a wireless transmission device. The intelligent instrument for measuring the tissue thickness has the advantages that the tissue thickness can be measured in a quantitative mode, tissue thickness measurement is accurate, corresponding anastomotic staple cartridges can be selected conveniently, and the success rate of anastomotic surgery is increased.

There are provided methods of fabricating a metal silicate layer on a semiconductor substrate using an atomic layer deposition technique. The methods include performing a metal silicate layer formation cycle at least one time in order to form a metal silicate layer having a desired thickness. The metal silicate layer formation cycle includes an operation of repeatedly performing a metal oxide layer formation cycle K times and an operation of repeatedly performing a silicon oxide layer formation cycle Q times. K and Q are integers ranging from 1 to 10 respectively. The metal oxide layer formation cycle includes the steps of supplying a metal source gas to a reactor containing the substrate, exhausting the metal source gas remaining in a reactor to clean the inside of the reactor, and then supplying an oxide gas into the reactor. The silicon oxide layer formation cycle includes supplying a silicon source gas, exhausting the silicon source gas remaining in the reactor to clean the inside of the reactor, and then supplying an oxide gas into the reactor.

The invention concerns a process of manufacturing optical components. A replication tool, a sub-master or a replica is manufactured using a structured element (for example a master) and a substrate. A structure of the structured element is replicated into liquid or plastically deformable material disposed at a first place on said substrate, then hardened to make it dimensionally stable, whereon the structured element is removed. These replicating, hardening and removing steps are repeated for a second, third, etc. place on said substrate the same structured element.

In manufacturing a pressure sensor a recess that will form part of the sensor cavity is formed in a lower silicon substrate. An SOI-wafer having a monocrystalline silicon layer on top of a substrate is bonded to the lower silicon substrate closing the recess and forming the cavity. The supporting substrate of the SOI-wafer is then etched away, the portion of the monocrystalline layer located above the recess forming the sensor diaphragm. The oxide layer of the SOI-wafer here acts as an “ideal” etch stop in the case where the substrate wafer is removed by dry (plasma) or wet etching using e.g. KOH. This is due to high etch selectivity between silicon and oxide for some etch processes and it results in a diaphragm having a very accurately defined and uniform thickness. The cavity is evacuated by forming a opening to the cavity and then sealing the cavity by closing the opening using LPCVD. Sensor paths for sensing the deflection of the diaphragm are applied on the outer or inner surface of the diaphragm. The monocrystalline diphragm gives the sensor a good long-term stability. Also the sensor path can be made of monocrystalline material, this giving the sensor even better good long-term characteristics. An increased sensitivity can be obtained by making active portions of the sensor paths freely extending, unsupported by other material of the pressure sensor, by suitable etching procedures.

At each of mutually different multiple focal positions, focal adjustment parameter values are obtained from images of standard particles made of the same substance. Each focal adjustment parameter value is figured out as any one of the ratio between the density value around the center of the standard particle image and the density value around the outline, the difference therebetween, and the density value around the center. The in-focus position is adjusted on the basis of the relationship between the obtained focal adjustment parameter values and the focal positions. Moreover, on the basis of the relationship between the focal adjustment parameter values and the focal positions, the parameter values are converted into focal positions, and the focal positions and dispersion thereof are used to check the displacement of the in-focus position and the thickness of the sample liquid.