45 results about "Spin filtering" patented technology

The invention relates to semidull POY polyester fiber and a processing method thereof. The method specifically includes the steps that melt is online added into a front-of-pump injecting system through direct spinning, prepared semidull polyester slices serve as the front-of-pump injecting raw material, conventional polyester melt serves as main melt, and the semidull polyester melt and the main melt are mixed through the front-of-pump injecting system, are then subjected to before-spinning filtering, enter a spinning assembly to be subjected to melting and spinning, and are subjected to annular air blowing cooling, oiling, stretching and rolling to obtain the semidull POY polyester fiber. The semidull POY polyester fiber has excellent delustering effect, and the polyester POY fiber prepared with low addition content of titanium dioxide is high in tensile strength, high in inorganic powder dispersity and good in delusteirng effect, and has the advantages of preventing see-through, being high in luster and the like when used for preparing clothes fabric and home textile fabric.

Nano-oxide based current-perpendicular-to-plane (CPP) magnetoresistive (MR) sensor stacks are provided, together with methods for forming such stacks. Such stacks have increased resistance and enhanced magnetoresistive properties relative to CPP stacks made entirely of metallic layers. Said enhanced properties are provided by the insertion of magnetic nano-oxide layers between ferromagnetic layers and non-magnetic spacer layers, whereby said nano-oxide layers increase resistance and exhibit spin filtering properties. CPP sensor stacks of various types are provided, all having nano-oxide layers formed therein, including the spin-valve type and the synthetic antiferromagnetic pinned layer spin-valve type. Said stacks can also be formed upon each other to provide laminated stacks of different types.

The invention relates to an optical spin injection method comprising the following steps: 1. a substrate is taken, and a buffer layer is grown on the substrate and used for smoothing the substrate to enable a following growing epitaxial structure to have high integrality; 2. an active layer is grown on the buffer layer and used for controlling spin polarized electrons; 3. a resonant tunneling structure is grown on the active layer and has a spin filtering function; 4. a light absorbing layer is grown on the resonant tunneling structure and used for generating the spin polarized electrons; 5. an electronic blocking layer is grown on the light absorbing layer and used for blocking and preventing non-spin polarized electrons; and 6. a heavily doped layer is grown on the electronic blocking layer and used for contacting ohm.

The invention provides a preparation method of A-nor-3, 5-cracking-androstane-5 -keto-3, 17-diacid. The preparation method comprises the following steps: (1), 3-carbonyl-4-androstene-17beta carboxylic acid is dissolved in alkaline water, and the temperature of the solution is controlled to be 20-40 DEG C; (2), an oxidizing agent which is an aqueous solution including sodium periodate and potassium permanganate is added, and reaction is performed continuously for 1-3 h after addition; (3), after sufficient reaction, cooling is performed by ice brine until the temperature is 0-5 DGE C, spin-filtering is performed, and a filter cake is washed by ice alkaline water at the temperature of 0-5 DEG C and spin-dried; and (4), a filtrate obtained from spin-filtering is acidized and spin-filtered, and a filter cake is washed until an eluate is neutral. According to the provided method, an organic solvent is not used, accordingly, the method is economic and environment-friendly, and aftertreatment is simple; reaction is performed under homogeneous phase condition, the reaction temperature and iodate separation temperature are lower, the product quality is good, the yield is high, the iodate recovery rate is high, and the cost is low. Therefore, a product with higher purity can be obtained at high yield and low cost with the method.

The invention provides a Co2MnGe / GaAs heterojunction spin filtering and negative differential resistance effects-based preparation technology. The technology comprises the steps of (1) building a crystal structure of full Heusler L21 type Co2MnGe and optimizing a lattice structure thereof; (2) calculating and analyzing the state density of the Co2MnGe under an equilibrium lattice constant aeq; (3) building a heterojunction in a Co2MnGe / GaAs<111> direction and optimizing the heterojunction; (4) repeating materials at the left end and the right end of the optimized heterojunction for a cycle respectively as a left electrode and a right electrode of the heterojunction; (5) applying bias to the left electrode and the right electrode of the heterojunction and calculating the quantum spin transport properties of the Co2MnGe / GaAs heterojunction; and (6) obtaining spin filtering and negative differential resistance effects in the transport process through analysis of the transport properties of the Co2MnGe / GaAs heterojunction.

Nano-oxide based current-perpendicular-to-plane (CPP) magnetoresistive (MR) sensor stacks are provided, together with methods for forming such stacks. Such stacks have increased resistance and enhanced magnetoresistive properties relative to CPP stacks made entirely of metallic layers. Said enhanced properties are provided by the insertion of magnetic nano-oxide layers between ferromagnetic layers and non-magnetic spacer layers, whereby said nano-oxide layers increase resistance and exhibit spin filtering properties. CPP sensor stacks of various types are provided, all having nano-oxide layers formed therein, including the spin-valve type and the synthetic antiferromagnetic pinned layer spin-valve type. Said stacks can also be formed upon each other to provide laminated stacks of different types.