39 results about "Molecular semiconductor" patented technology

The invention provides the use of a solvent selected from the group consisting of alkoxybenzenes and alkyl substituted alkoxybenzenes in reducing the contact resistance in an organic thin film transistor comprising a semiconductor layer comprising a blend of a small molecule semiconductor material and a polymer material that is deposited from a solution of said small molecule semiconductor material and said polymer material in said solvent and novel semiconductor blend formulations that are of particular use in preparing organic thin film transistors. Said solvents yield devices with lower absolute contact resistance, lower absolute channel resistance, and lower proportion of contact resistance to the total channel resistance.

The invention discloses a method for preparing porous organic semiconductor film by using a solution method and application thereof. The method is characterized by including: dissolving organic semiconductor with high molecular weight and oligomer with low molecular weight in an organic solvent to obtain a blending solution; spin-coating the blending solution on the substrate to form a blending film by a solution spin-coating method, and using an appropriate solvent to dissolve and remove the oligomer with low molecular weight in the blending film to obtain the porous organic semiconductor film. The porous film is prepared by the solution method, and the method is simple, has good repeatability, has low requirements of the device and technology condition, and is suitable for preparing most of the high-molecular semiconductor porous films. The porous organic semiconductor film prepared by the invention can be used for the gas phase sensor, and can significantly improve the detection effect of the organic semiconductor material on the corresponding gas analyte by means of providing an effective gas dispersion channel.

The invention relates to a small organic molecule semiconductor material containing rhodanine fused (like) isatin and its preparation method and application. The general structural formula of the material is shown in Formula I. The invention has excellent solubility, is soluble in common organic solvents, and can be used for solution processing to prepare organic optoelectronic devices; it has good response to the solar spectrum and good frontier molecular orbital energy levels, and the molecules have good planarity. It has high electron mobility and can be used as a small molecule acceptor material in the active layer material of organic solar cells.

Disclosed are an organic small molecular semiconductor material, and a synthetic method therefor. The semiconductor material comprises a diaromatic ring pentalene π-conjugate unit and an aromatic group, and has the following structural formula (I), wherein X1 and X2 are independently selected from O, S or Se; X3 is selected from O, S, Se, NR2, C(R2)2 or Si(R2)2; R2 is selected from a linear or branched alkyl group comprising 1-20 carbon atoms, and a linear or branched modified alkaryl or heterocyclic aryl comprising 7-20 carbon atoms; R1 is selected from a hydrogen atom, a linear or branched alkyl group comprising 1-20 carbon atoms, and a linear or branched modified alkaryl or heterocyclic aryl comprising 7-20 carbon atoms; and A is an electron-withdrawing unit. The semiconductor material can be synthesised by a transition metal catalysed condensation reaction. The semiconductor material of the present invention has a small spectrum band gap, a long spectrum absorption wavelength, a relatively low highest occupied molecular orbital and lowest unoccupied molecular orbital energy level, and can be used as a photoelectric material, especially as a receptor material in an organic photovoltaic device, and it also has advantages such as a simple preparation process, a low cost, etc.

The invention relates to a transistor structure which comprises a patterning N-type transparent oxide semiconductor layer and a patterning P-type organic high molecular semiconductor layer. The patterning N-type transparent oxide semiconductor layer is formed on a baseplate to serve as a base electrode. The patterning P-type organic high molecular semiconductor layer is formed on the patterning N-type transparent oxide semiconductor layer and comprises a first part and a second part so that the patterning N-type transparent oxide semiconductor layer respectively forms heterojunction interfaces with the first part and the second part of the patterning P-type organic high molecular semiconductor layer, wherein the first part of the patterning P-type organic high molecular semiconductor layer serves as an emitting electrode, and the second part of the patterning P-type organic high molecular semiconductor layer serves as a collecting electrode.

The invention discloses a conjugated small molecular semiconductor material containing a halogen-modified core group and its preparation and application. The small-molecule semiconductor material includes a halogenated two-dimensional thienothiophene core, a bridging unit and a hexylthiophene end group, and its preparation method is to recycle an organotin reagent reaction and Still coupling to obtain a target molecule, a total of seven steps of reaction: tin reagent Reaction, Still coupling reaction, tin reagent reaction, Still coupling reaction, tin reagent reaction, Still single-sided coupling reaction and Still double-sided coupling reaction, the three-step tin reagent reaction in the seven-step reaction all yields a crude product that does not need to go through the column Directly put into the next reaction, efficient and easy to operate. The small molecule semiconductor material of the present invention has a longer range of ultraviolet-visible absorption, deeper electron highest occupied orbital and lowest empty orbital, has good solubility and light absorption performance, and can be used as an electron donor material for small molecule organic solar cells .