Optical spin injection method

Abstract

The invention relates to an optical spin injection method comprising the following steps: 1. a substrate is taken, and a buffer layer is grown on the substrate and used for smoothing the substrate to enable a following growing epitaxial structure to have high integrality; 2. an active layer is grown on the buffer layer and used for controlling spin polarized electrons; 3. a resonant tunneling structure is grown on the active layer and has a spin filtering function; 4. a light absorbing layer is grown on the resonant tunneling structure and used for generating the spin polarized electrons; 5. an electronic blocking layer is grown on the light absorbing layer and used for blocking and preventing non-spin polarized electrons; and 6. a heavily doped layer is grown on the electronic blocking layer and used for contacting ohm.

Description

technical field [0001] The invention relates to a spin injection method, in particular to introducing electrons with high spin polarization into semiconductor active regions by using optical polarization transfer and resonant tunneling. Background technique [0002] The continuous reduction of device size and the continuous improvement of integration density in CMOS integrated circuits have brought many problems. Quantum effects can no longer be ignored. The heat dissipation of devices and the yield rate of products all make Moore's Law, which is regarded as the golden rule, face huge challenges. At this time, people consider that using the spin of electrons is a good solution to the above problems. . [0003] The scale required by the spin-correlation effect is on the nanometer scale, which is an order of magnitude smaller than the tens of nanometers required by the charge, and the spin device is easier to achieve a higher degree of integration; secondly, the interaction o...

AI Technical Summary

Problems solved by technology

The current injection method is to inject spins into semiconductors through ferromagnets, but this injection method results in very low spin injection efficiency due to the mismatch between the interface conductance of ferromagnetic metals and semiconductors; the spin Hall effect is used to generate spins. current, the disadvantage of this method is that it uses the spin-orbit coupling effect in semiconductors, so it is only suitable for narrow-bandgap semiconductors and can only be operated at low temperatures; Very low degree of spin polarization

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