80 results about "Special care" patented technology

In a wear assembly for securing wear members to excavating equipment, a spool is used with a wedge to hold the wear member in place. The spool is formed with at least one laterally extending arm at its upper end in lieu of an axial arm such as used in a conventional C-shaped spool. In this way, the spool can be easily supported in the assembly as the wedge is installed. The spool does not fall through the opening and no special care is needed to prevent it from falling. The spool also holds itself in place when the wedge is driven into the passage. As a result, installation of the wear assembly is easier and less hazardous. In addition, the lateral support reduces the risk that the spool will suffer spreading.

A resistor structure is disclosed that is constructed out of two layers of polysilicon. The intrinsic device is made using the top layer which is either a dedicated deposition, or formed as part of an existing process step such as a base epi growth in a BiCMOS flow. This poly layer can be made with a relatively high (greater than 2000 ohms per square) sheet resistance by appropriate scaling of the implant dose or by insitu doping methods. In this invention this layer is arranged to be about 1000 A or less thick. Such a resistor form with this thickness has been shown to demonstrate a better standard deviation of resistance compared to resistors made with a thicker layer. Additionally, practical resistors made in elongated forms demonstrate better standard deviations of resistance when five bends were incorporated into the form. The resistor ends are formed by the addition of a bottom poly layer in a self aligned manner with a deposition that may already be part of the process sequence. The end result is that the intrinsic resistor body is formed of a single poly layer, while the ends are created out of two layers. These ends are thick enough so that standard silicide and contact etch processing may be added to the structure without special care. In addition, dedicated or already available implants may be incorporated into the resistor ends to ensure ohmic contacts from polysilicon to the silicide or the contact metal are achieved. These steps can produce an easily fabricated resistor structure with consistent, low resistance, ohmic end contacts, and intrinsic resistance of greater than 2000 ohms per square.