A
resistor structure is disclosed that is constructed out of two
layers of polysilicon. The intrinsic device is made using the top layer which is either a dedicated deposition, or formed as part of an existing process step such as a base epi growth in a
BiCMOS flow. This poly layer can be made with a relatively high (greater than 2000 ohms per square)
sheet resistance by appropriate scaling of the
implant dose or by insitu
doping methods. In this invention this layer is arranged to be about 1000 A or less thick. Such a
resistor form with this thickness has been shown to demonstrate a better standard; deviation of resistance compared to resistors made with a thicker layer. Additionally, practical resistors made in elongated forms demonstrate better standard deviations of resistance when five bends were incorporated into the form. The
resistor ends are formed by the addition of a bottom poly layer in a self aligned manner with a deposition that may already be part of the process sequence. The end result is that the intrinsic resistor body is formed of a single poly layer, while the ends are created out of two
layers. These ends are thick enough so that standard
silicide and contact etch
processing may be added to the structure without
special care. In addition, dedicated or already available implants may be incorporated into the resistor ends to ensure ohmic contacts from polysilicon to the
silicide or the contact
metal are achieved. These steps can produce an easily fabricated resistor structure with consistent,
low resistance, ohmic end contacts, and
intrinsic resistance of greater than 2000 ohms per square.