The invention discloses a
light spot position detection sensor. The
light spot position detection sensor comprises a first low-resistance
semiconductor layer, a high-resistance
semiconductor layer, a second low-resistance
semiconductor layer and an insulating anti-reflection
protection layer, wherein the first low-resistance semiconductor layer, the high-resistance semiconductor layer, the second low-resistance semiconductor layer and the insulating anti-reflection
protection layer are arranged successively, the first low-resistance semiconductor layer and the high-resistance semiconductor layer are of the same conducting type; the second low-resistance semiconductor layer and the high-resistance semiconductor layer are of reverse conducting types, so that a semiconductor PN junction is formed; the
doping concentration of the second low-resistance semiconductor layer is higher than the
doping concentration of the high-resistance semiconductor layer; the surface of the insulating anti-reflection
protection layer is provided with four same electrodes; the four electrodes define a square effective photosensitive area; and the surface of the first low-resistance semiconductor layer is provided with a
metal layer. The
light spot position detection sensor works on the basis of an
avalanche breakdown principle, response current has a self-activation amplification function, and the sensitivity is greatly increased; and the light spot position detection sensor can be manufactured with an ordinary
silicon wafer, so that the material cost is low, and the manufacturing cost of the sensor is lowered remarkably.