81 results about "Particle adhesion" patented technology

A method of manufacturing a semiconductor device is disclosed. The manufacturing method includes the following steps in a period from a liquid immersion lithography step to a step in which a film structure of at least an edge of a wafer changes from a timing of the liquid immersion lithography step. At least one of a side surface of an edge of the wafer and an upper surface of the edge of the wafer is inspected. On the basis of an inspection result, at least one of the presence / absence of film peeling and the presence / absence of particle adhesion is determined on at least one of the side surface of the edge of the wafer and the upper surface of the edge of the wafer. A predetermined coping process is performed when it is determined that at least one of the film peeling and the particle adhesion has occurred.

The invention provides a machining method of a rolling bearing formed by whole and precise hard turning and molding of a sleeve ring. The machining method is characterized by comprising the following steps: after quenching and annealing heat treatment of the sleeve ring, carrying out the whole and precise hard turning and molding; and then combining and assembling a rolling body, wherein a sleeve ring rolling path comprises a fixed-curvature-groove-shape rolling path, a non-groove-shaped rolling path, a variable-curvature-shaped rolling path and a non-groove-shaped rolling path according to section shapes. The machining method disclosed by the invention overcomes the defects in the prior art that (1) performance defects on a machining surface, including grinding burn, a grinding metamorphic layer, grinding tensile stress, abrasive particle adhesion, scratches and the like, are caused by grinding and molding the sleeve ring; (2) shape defects on the machining surface that mutual position precision of all parts is not high, the shape of the rolling path cannot be accurately guaranteed and the like, are caused by carrying out a plurality of times of machining on different surfaces, even the same surface; (3) the defects that large investment of equipment, a tool clamp and personnel, and high machining cost are caused; and (4) the defects that a cutting solution needs to be used and the machining method is not environment-friendly enough are caused. The invention provides an anti-fatigue and green machining method which has the very great engineering actual meanings.

A method of manufacturing a semiconductor device is disclosed. The manufacturing method includes the following steps in a period from a liquid immersion lithography step to a step in which a film structure of at least an edge of a wafer changes from a timing of the liquid immersion lithography step. At least one of a side surface of an edge of the wafer and an upper surface of the edge of the wafer is inspected. On the basis of an inspection result, at least one of the presence / absence of film peeling and the presence / absence of particle adhesion is determined on at least one of the side surface of the edge of the wafer and the upper surface of the edge of the wafer. A predetermined coping process is performed when it is determined that at least one of the film peeling and the particle adhesion has occurred.

A synthetic microfluidic microvasculature network and associated methods mimic the structure, fluid flow characteristics, and physiological behavior of physiological microvasculature networks. Computational methods for simulating flow and particle adherence in synthetic and physiological microvascular systems and methods for determining parameters influencing particle adhesion and drug delivery are described with applications in the optimization of drug delivery and microvascular treatments and in describing disease mechanisms that affect the microvasculature.

An electrolytic copper plating method characterized in employing a phosphorous copper anode having a crystal grain size of 1,500 μm (or more) to 20,000 μm in an electrolytic copper plating method employing a phosphorous copper anode. Upon performing electrolytic copper plating, an object is to provide an electrolytic copper plating method of a semiconductor wafer for preventing the adhesion of particles, which arise at the anode side in the plating bath, to the plating object such as a semiconductor wafer, a phosphorous copper anode for electrolytic copper plating, and a semiconductor wafer having low particle adhesion plated with such method and anode.

Any particle adhesion onto the surface of a substrate to be processed is prevented. There is provided a substrate processing apparatus characterized by including a transfer chamber for, via a gate to which a substrate accommodating container for accommodation of the substrate is set, performing transfer of the substrate between the same and the substrate accommodating container, a processing chamber for applying a specific process to the substrate, a load-lock chamber for linking the processing chamber with the transfer chamber, and a temperature control unit for at the stage of transferring the substrate into at least one of the transfer chamber and the load-lock chamber, so as for the temperature of the substrate just before the transfer thereof to be higher than the temperature of the interior of the chamber, into which the substrate will be transferred, controlling at least one of the temperature of the substrate and the temperature of the interior of the chamber.

The present invention pertains to an electrolytic copper plating method characterized in employing pure copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating with the pure copper anode having a crystal grain diameter of 10 μm or less or 60 μm or more or a non-recrystallized anode. Provided are an electrolytic copper plating method and a pure copper anode for electrolytic copper plating used in such electrolytic copper plating method capable of suppressing the generation of particles such as sludge produced on the anode side within the plating bath upon performing electrolytic copper plating, and capable of preventing the adhesion to a semiconductor wafer, as well as a semiconductor wafer plated with the foregoing method and anode having low particle adhesion.