The invention discloses a method for representing
internal stress of
TATB-based PBX under a force-
heat effect. The method for representing the
internal stress of the
TATB-based PBX under the force-
heat effect comprises the following steps: loading mechanical stress /
heat stress to the PBX in situ; using a
neutron diffraction technology to obtain
crystal lattice parameters of a
TATB crystal so as toobtain relations between mechanical stress and a temperature and the
crystal lattice parameters of the TATB; and meanwhile, using an internal
microstructure representing technology to obtain a meso-structure of the PBX; obtaining a performance inflection point of the PBX by using the relations among the mechanical stress, the temperature and the crystal lattice parameters of the TATB and using the meso-structure; and finally, obtaining an internal TATB crystal response
behavior rule of the PBX under the force-heat
coupling effect. The method for representing the
internal stress of the TATB-based PBX under the force-
heat effect, disclosed by the invention, has the advantages that the
neutron diffraction technology is introduced into the study field of energetic materials for the first time; lattice parameters, such as displacement, widening and
asymmetry, of a TATB crystal
diffraction peak in the PBX under the mechanical stress /
heat stress is non-destructively observed in a non-invasive manner, so that basic parameters can be provided for
macro-performance evaluation of the energetic materials.