The invention discloses a bonding
system of a high-reliability thick-film mixed
integrated circuit and a manufacturing method thereof. The
system and the method are characterized in that the bonding
system is an indirectly bonded bonding system, namely, a layer of
blocking layer metal film is added on the surface of the
metal bonding area and a layer of
metal film capable of carrying out high-reliability bonding with the
silicon-
aluminium wire is then added on the surface of the metal bonding area so as to form a multilayer transitional film; and subsequently the bonding system of the
silicon-
aluminium wire is carried out on the surface of the metal bonding area. The system and the method have the advantages of: (1) improving the bonding performance of the bonding area of the thick-film gold conducting belt and the
silicon-
aluminium wire; (2) forming local
nickel bonding area or an aluminium bonding area on the bonding area of the same gold conducting belt, and being compatible with the gold
wire bonding and silicon-aluminium
wire bonding; and (3) adopting a metal
mask location register and high-
vacuum deposition film-formation technology and having no damaging effects on the substrate of the thick-film. When being applied to all thick-film mixed
integrated circuit taking gold conducting belts or silver conducting belts as substrates, the reliability of the mixed
integrated circuit can be improved and the mixed integrated circuit has wide application prospect in the fields such as
aviation,
spaceflight, navigation, communication, industrial control and the like.