Bonding system of high-reliability thick-film mixed integrated circuit and manufacturing method thereof

Abstract

The invention discloses a bonding system of a high-reliability thick-film mixed integrated circuit and a manufacturing method thereof. The system and the method are characterized in that the bonding system is an indirectly bonded bonding system, namely, a layer of blocking layer metal film is added on the surface of the metal bonding area and a layer of metal film capable of carrying out high-reliability bonding with the silicon-aluminium wire is then added on the surface of the metal bonding area so as to form a multilayer transitional film; and subsequently the bonding system of the silicon-aluminium wire is carried out on the surface of the metal bonding area. The system and the method have the advantages of: (1) improving the bonding performance of the bonding area of the thick-film gold conducting belt and the silicon-aluminium wire; (2) forming local nickel bonding area or an aluminium bonding area on the bonding area of the same gold conducting belt, and being compatible with the gold wire bonding and silicon-aluminium wire bonding; and (3) adopting a metal mask location register and high-vacuum deposition film-formation technology and having no damaging effects on the substrate of the thick-film. When being applied to all thick-film mixed integrated circuit taking gold conducting belts or silver conducting belts as substrates, the reliability of the mixed integrated circuit can be improved and the mixed integrated circuit has wide application prospect in the fields such as aviation, spaceflight, navigation, communication, industrial control and the like.

Description

technical field [0001] The present invention relates to a semiconductor device, more specifically, to the connection of components of a semiconductor device, especially to a bonding system of a thick-film hybrid integrated circuit. Background technique [0002] It is known that in the production of integrated circuits, metal wires (ie, bonding wires, such as Al, Si-Al, Au, Cu, etc.) are used to connect the electrode leads on the semiconductor chip, the electrode leads on the hybrid integrated circuit substrate, the base of the package The process of connecting the outer leads on the electrode with thermocompression bonding, ultrasonic bonding, etc. is called bonding; in a certain part of the electrode lead, the area used to bond with the bonding wire is called the bonding area; The metal connection system composed of the surface metal of the bonding area and the bonding wire after bonding is called a bonding system. [0003] The key and system of the original hybrid integra...

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Problems solved by technology

[0005] The original technology has the following defects: ①In the silver conduction band and palladium-silver conduction band, silver is easy to oxidize, and in the case of long-term power-on, it is easy to produce electromigration phenomenon, which seriously affects the reliability of the device, usually manifested as the decline of bonding strength

②The gold conduction band is in the case of high current, in the Au-Al bonding system, the electromigration phenomenon of the gold layer in the bonding contact area is obvious, and "purple spots" are easily formed between Au-Al, and the product composition is AuAl 2 , resulting in the loosening and voiding of the alloy points formed during Au-Al bonding, and the final bonding force is greatly reduced

④ Between the chip (the surface metal layer is an aluminum layer), the conduction band (gold conduction band or silver conduction band), the lead post (gold-plated or nickel-plated), and the lead (gold wire or silicon-aluminum wire), it is very difficult in the bonding process. Difficult to Compatible with Their Requirements

[0006] After searching, there are currently only 3 Chinese patent applications involving integrated circuit bonding systems, namely No. 200510003089.8 "Method for Improving the Reliability of Wire Bonding in Integrated Circuits" and No. 200610031768.0 "Bond Force Monitoring System for Ultrasonic Bonding Process" , No. 200620201098.8 "bonding head device", but these patents have nothing to do with the present invention, and there is no report on a high-reliability thick-film hybrid integrated circuit bonding system

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