Preparation methods of aluminium silicon carbide composites with interpenetrating network structure and components of composites

Abstract

The invention provides preparation methods of aluminium silicon carbide composites with interpenetrating network structure and components of the composites. The composites are used for electronic packaging. The composites or the components of the composites comprise the following raw materials by volume: 45-85% of reinforcing phase silicon carbide and 15-55% of aluminium matrix, and at the same time, the reinforcing phase silicon carbide and the aluminium matrix form the interpenetrating network structure. The preparation methods comprise the following steps: firstly preparing silicon carbide preform bisques and keeping the silicon carbide preform bisques at the constant temperature of about 2200 DEG C for 1-3 hours under the protection of argon to obtain silicon carbide preforms with network structure; infiltrating aluminium alloy liquid into the pores of the preforms by adopting a vacuum pressure infiltration process to prepare the aluminium silicon carbide composites with interpenetrating network structure or components or near-net-shaped components; and finally obtaining the components with final shapes and dimensions through machining. Through the preparation methods, the products have the characteristics of adjustable coefficient of expansion, higher heat conductivity, higher elastic modulus, good air tightness and low cost and can be applied in the field of packaging of such electronic devices as hybrid integrated circuits, millimeter wave / micron wave integrated circuits, multichip modules, large current power modules and the like.

Description

technical field [0001] The invention relates to a method for preparing an aluminum-silicon carbide composite material with a network interpenetrating structure and components thereof for electronic packaging, and belongs to the technical field of metal-based composite materials and component preparation. Background technique [0002] Aluminum alloys, copper alloys, Kovar alloys, W / Cu alloys, etc. are mainly used as packaging materials for microelectronic devices. However, the existing aluminum alloys and copper alloys have too high expansion coefficients, Kovar alloys have too high density and low thermal conductivity, and W / Cu alloys have ideal thermal conductivity and expansion coefficients, but they are expensive and have too high a density, making it difficult to Meet actual needs. [0003] Chinese patent 02139732.5 "Preparation method of aluminum-silicon carbide composite material and its components", CN101427367B "aluminum-silicon carbide composite and heat dissipatio...

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Problems solved by technology

However, the existing aluminum alloys and copper alloys have too high expansion coefficients, Kovar alloys have too high density and low thermal conductivity, and W / Cu alloys have very ideal thermal conductivity and expansion coefficients, but they are expensive and have too high a density, which are difficult to achieve. Meet actual needs

[0003] Chinese patent 02139732.5 "Preparation method of aluminum-silicon carbide composite material and its components", CN101427367B "aluminum-silicon carbide composite and heat dissipation parts using the composite" and US patent US5746267 "MONOLITHIC METALMATRIX COMPOSITE" all use silicon carbide particles as reinforcement Phase, the high volume fraction silicon carbide particle reinforced aluminum matrix composite material (hereinafter referred to as: aluminum silicon carbide composite material) prepared in this way has a minimum thermal expansion coefficient of not less than 6×10 at 30°C to 150°C -6 / °C, the maximum thermal conductivity at room temperature does not exceed 230W / m.K, which cannot fully meet the actual needs of electronic component packaging

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