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Method for preparing composite material of aluminium silicon carbide and structural piece

A composite material, aluminum silicon carbide technology, used in electrical components, manufacturing tools, electrical solid devices, etc., can solve the problems of high density, high expansion coefficient and low thermal conductivity of Kovar alloy, and achieve low cost and thermal conductivity. The effect of high rate and high elastic modulus

Inactive Publication Date: 2004-05-26
NAT UNIV OF DEFENSE TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing aluminum alloys and copper alloys have too high expansion coefficients, Kovar alloys have too high density and low thermal conductivity, and W / Cu alloys have very ideal thermal conductivity and expansion coefficients, but they are expensive and have too high a density, which are difficult to achieve. Meet actual needs

Method used

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  • Method for preparing composite material of aluminium silicon carbide and structural piece
  • Method for preparing composite material of aluminium silicon carbide and structural piece
  • Method for preparing composite material of aluminium silicon carbide and structural piece

Examples

Experimental program
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Effect test

Embodiment 1

[0031] Embodiment 1 (composite material): prepare the aluminum phosphate solution that phosphorus atom ratio is 23 to aluminum atom; Get 100 gram molecular weight and be the polyethylene glycol melting of 6000, stir after adding 100ml distilled water, 18 gram dextrin and 18 gram glutinous rice flour , then add 100ml of aluminum phosphate solution and 1000 grams of silicon carbide micropowder with a particle size of W28 and stir evenly; weigh an appropriate amount of silicon carbide slurry, and unidirectionally mold it to obtain a green silicon carbide preform of 80mm×50mm×10mm or φ90×15mm. The air furnace was raised to 650°C at a rate of 1.5°C / min for 1.5 hours to obtain a silicon carbide preform. use figure 2 The aluminum silicon carbide composite material is prepared by the die casting method shown, and the specific process parameters are as follows: the preform is heated to 620°C for 1 hour, the forming mold is heated to 340°C for 1 hour, and the ZL101A is melted and heate...

Embodiment 2

[0034] Embodiment 2: the aluminum phosphate solution that the atomic ratio of phosphorus to aluminum is 10; 5 grams of polyethylene glycol with a molecular weight of 10000, 10 ml of distilled water, 5 grams of dextrin, 5 grams of glutinous rice flour and 10 ml of aluminum phosphate solution are mixed to obtain Aluminum phosphate adhesive, add 100ml of silicon carbide micropowder ball mill and mix to obtain silicon carbide slurry, weigh 20 grams of silicon carbide slurry to obtain bidirectional molding Figure 4 For the silicon carbide preform green body shown, the silicon carbide preform is obtained by raising the temperature at 1.5°C / min to 700°C for 1 hour, and the vacuum infiltration method is used to prepare aluminum silicon carbide composite components. The specific process parameters are as follows: vacuum chamber pressure 5Pa, the silicon carbide preform and molding mold are heated at 720°C for 2 hours, the 6063Al alloy is melted and heated at 760°C for 1 hour, the infil...

Embodiment 3

[0035] Example 3: Figure 5Many circles and rings in the schematic diagram of the components shown require ceramic components to be embedded. Since the ceramic components have low dimensional accuracy and the component requires high air tightness, the ceramic components must be embedded in the silicon carbide preform. Mix aluminum phosphate solution with phosphorus atomic ratio to aluminum atomic ratio of 28, 50 grams of polyethylene glycol with a molecular weight of 12000, 20 ml of distilled water, 10 grams of dextrin, 10 grams of glutinous rice flour and 60 ml of aluminum phosphate solution to make aluminum phosphate bonding Add 500 grams of silicon carbide powder and stir evenly to obtain a silicon carbide slurry, use bidirectional molding to obtain a green silicon carbide preform for inlaid ceramic parts, heat up to 800°C at a rate of 0.7°C / min for 2 hours, and cool in the furnace to obtain the required carbonization Silicon prefabricated parts, using vacuum infiltration m...

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Abstract

A composite silicon aluminocarbide material or its member is prepared through preparing the aluminum phosphate solution from phosphoric acid and aluminum hydroxide, mixing it with polyethanediol, distilled water, dextrin and glutinous rice flour to obtain binder, mixing it with silicon carbide microparticles, die pressing to obtain prefabricated raw material, heat treating in inertial gas or air, pressure casting or vacuum impregnating to osmosize the molten aluminum alloy into it, and machining by needed sizes. Its advantages are low density, adjustable expansibility, high thermal conductivity, elastic modulus and air tightness.

Description

technical field [0001] The invention relates to an aluminum-silicon carbide composite material and a method for preparing components thereof. Background technique [0002] Aluminum alloys, copper alloys, Kovar alloys, W / Cu alloys, etc. are mainly used as packaging materials for microelectronic devices. However, the existing aluminum alloys and copper alloys have too high expansion coefficients, Kovar alloys have too high density and low thermal conductivity, and W / Cu alloys have ideal thermal conductivity and expansion coefficients, but they are expensive and have too high a density, making it difficult to Meet actual needs. Contents of the invention [0003] The object of the present invention is to provide a kind of microelectronics field such as hybrid integrated circuit, millimeter wave / micron wave integrated circuit (MMIC), multi-chip module and high current power module (such as IGBT module) etc. The invention discloses an aluminum silicon carbide composite materia...

Claims

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Application Information

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IPC IPC(8): B28B3/00B28B7/00C04B35/565C04B35/622H01L23/08
Inventor 熊德赣赵恂卓钺刘希从白书欣
Owner NAT UNIV OF DEFENSE TECH
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