69 results about "Cathodoluminescence" patented technology

An apparatus for simultaneous detection of backscattered electrons and photons from a sample. The device includes a direct detection backscattered electron detector and a photon detector. The backscattered electron detector has a reflective surface that reflects photons emitted by the sample onto the photon detector.

The invention provides a gallium nitride substrate that is capable of growing an epitaxial growth layer having a good crystalline quality even if the surface has physical level differences, and an epitaxial wafer that a surface thereof has good flatness by growing the epitaxial growth layer on the above-mentioned gallium nitride substrate. According to one embodiment of the invention, the gallium nitride substrate (1) comprises: a plurality of physical level differences (3) in a surface thereof. All the physical level differences (3) existing in the surface have a dimension of not more than 4 mum. A relationship of (H-L) / H100<=80 is satisfied in all the physical level differences (3), where H represents a higher value of cathodoluminescence emission intensities of a wavelength corresponding to a bandgap of the gallium nitride substrate, and L represents a lower value of the cathodoluminescence emission intensities, the cathodoluminescence emission intensities being measured in an upper step (3b) and a lower step (3a) of the physical level difference.

An ultra-high-density data storage medium (902) using indium chalcogenide, gallium chalcogenide, and indium-gallium chalcogenide thin films, the purpose of which is to form some photoconductive, photovoltaic, Or a bit storage area (904) that acts as a photoluminescent semiconductor device. These bit storage areas generate electrical signals when exposed to electromagnetic radiation; or form some areas that act as cathode ray conductors, cathode ray voltaics, or cathode rays. The light-emitting semiconductor device acts as a bit storage area (904) that generates an electrical signal when exposed to an electron beam. The two values ​​of the bit are represented by the two solid phases of the data storage medium, namely the crystalline phase and the amorphous phase. The transition between the two phases can be achieved by heating the bit storage area.

The invention provides a method based on the cathode luminescence feature of scheelite in a porphyry deposit and used for distinguishing the redox properties of an ore-forming fluid. The method includes: acquiring a plurality of scheelite samples; selecting scheelite particles on the basis of the mineralogy, morphology and production features of the scheelite particles in the scheelite samples toobtain high-quality scheelite particles; acquiring the scanning electron microscope-cathode luminescence image and back scattering image of the high-quality scheelite particles; based on the scanningelectron microscope-cathode luminescence image and the back scattering image, dividing the high-quality scheelite particles according to the morphology and internal structural features of the scheelite particles to obtain a plurality types of high-quality scheelite particles; performing in-situ analysis on rare-earth elements in the plurality types of high-quality scheelite particles to obtain europium content and molybdenum content data; calculating europium anomaly according to the europium content data, and building an element distribution diagram according to the europium anomaly and the molybdenum content data, wherein the element distribution diagram is used for indicating the redox properties of the ore-forming fluid of the scheelite.

A side entry TEM holder incorporates a miniature tilted off axis elliptical mirror (110) to collect cathodoluminescence from the specimen (130) and couple it efficiently into a tilted fiber optic (120) integrated into the holder. The design is compatible with the cryogenic operation of the holder. TEM specimens are partially transparent to the electron beam, and so light can be emitted above and below the specimen. The same principle of off-axis mirror and tilted fiber can be utilized to collect light from above and below the specimen yet fit into the very confined space required by insertion through the goniometer and for operation between narrow gap pole pieces. With a dual system, the emission of light from above the specimen can be compared to that from below thereby enhancing the versatility of the analytical technique.

An electrode for photoelectric conversion elements having high initial characteristics and excellent durability, a manufacturing method of the electrode for photoelectric conversion elements, and a dye-sensitized solar cell are provided. An electrode for photoelectric conversion elements 11 according to the present invention has a structure in which a metal oxide layer 14 containing zinc oxide is provided on a base 12. The metal oxide layer 14 has a plurality of bump-like protrusions 14a formed so as to protrude radially from the base 12 side, and also has an emission peak in a region of 350 to 400 nm in cathodoluminescence measurement. The metal oxide layer is preferably heat treated at 220 to 500 DEG C.

Provided herein are non-invasive methods of nanoscale imaging of a sample using an illumination layer and an electron beam. For example, the electron may activate the illumination layer without activating the sample, and the illumination layer may emit cathodoluminescence to produce a nanoscale image of the sample.