Indium surfide and gallium surfide for ultrahigh density data storage device and phase transformation meidum of indium-gallium surfide

Abstract

An ultra-high-density data storage medium (902) using indium chalcogenide, gallium chalcogenide, and indium-gallium chalcogenide thin films, the purpose of which is to form some photoconductive, photovoltaic, Or a bit storage area (904) that acts as a photoluminescent semiconductor device. These bit storage areas generate electrical signals when exposed to electromagnetic radiation; or form some areas that act as cathode ray conductors, cathode ray voltaics, or cathode rays. The light-emitting semiconductor device acts as a bit storage area (904) that generates an electrical signal when exposed to an electron beam. The two values ​​of the bit are represented by the two solid phases of the data storage medium, namely the crystalline phase and the amorphous phase. The transition between the two phases can be achieved by heating the bit storage area.

Description

technical field [0001] The present invention relates to an ultra-high-density data storage medium for permanent electronic data storage devices, in particular to a semiconductor compound composed of a class of 13 / III group metals and 16 / VI group chalcogenides, this type of semiconductor The compound possesses some phase transition properties and electronic properties that allow multiple writing of bit storage areas within data storage media and use as micro-photoconductivity, photovoltaics, photoluminescence, cathode ray conductance, cathode ray photovoltaics Semiconductor devices such as lasers, or cathode ray luminescence, thereby facilitating data retrieval. Background of the invention [0002] Figure 1-Figure 3 The graph shows the energy level distribution of the quantum states of valence electrons in metals, insulators, and semiconductors at 0°K. At 0°K, the energy level of the highest energy state occupied by electrons is called the Fermi energy, E F . exist Figur...

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Problems solved by technology

If the external reverse bias applied to the device is too large, and the electric field in the depletion region 508 becomes too strong, the reverse current may increase sharply and cause damage to the semiconductor junction device

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