254 results about "Backscattered electron" patented technology

In a scanning electron microscope, an emitted primary electron beam is diverted by an angle of at least about 45 degrees prior to incidence with a specimen. The beam may be bent by a magnetic separator. The separator may also serve to deflect secondary electron and back scattered electrons. As the angle of emissions and reflections from the specimen is close to the angle of incidence, bending the primary electron beam prior to incidence, allows the electron source to be located so as not to obstruct the travel of emissions and reflections to suitable detectors.

Improvement in resolution in terms of minimum feature sizes and proximity effects in an electronic mask is attained by making the mask using a high voltage electron beam which deflects or blocks backscattered electrons. The novel mask structure comprises a transparent support, an absorber layer disposed on said support, a dielectric layer disposed on said absorber layer, and a resist layer disposed on said dielectric layer. It is the dielectric layer which is credited for improving resolution in said mask which can be used a multiple number of times in printing a pattern for various applications, including electronic devices and integrated circuits.

An additive layer manufacture machine generates a first electron beam for scanning a powder layer to be melted in a selective melting process. Backscatter electrons from the interaction between the first electron beam and the powder layer is detected by a backscatter detector. Any defects in the powder layer can then be identified, or inferred, from the detected backscatter electrons. If necessary, any defects can be removed from the powder layer before selective melting. Once the powder layer has been inspected and if necessary improved, selective melting of the layer is performed in order to produce a layer of the component. The process may be repeated to generate a finished component with good mechanical properties.

An inspection apparatus and method capable of well observing or inspecting a specimen contained in a liquid. The inspection apparatus has a film including first and second surfaces. Furthermore, the apparatus has a vacuum chamber for reducing the pressure in the ambient in contact with the second surface of the film, primary beam irradiation column connected with the vacuum chamber, and a shutter for partially partitioning the space between the film and the primary beam irradiation column within the vacuum chamber. A liquid sample is held on the first surface of the film. The primary beam irradiation column irradiates the sample. Backscattered electrons (a secondary beam) produced from the sample by the primary beam irradiation are directed at the shutter, producing secondary electrons (a tertiary signal).

An additive layer manufacture (ALM) machine comprises an energy source (180) for selectively melting a layer of metal powder (500), and an electron beam (110) for determining the shape of the selectively melted solid layer (320) once it has solidified. The shape is determined by detecting backscattered electrons (130) from the interaction between the electron beam (110) and the solid layer (320). If the shape of the solid layer (320) is outside a determined tolerance, it may be corrected before proceeding. The process may be repeated to generate a finished component (300) with good mechanical properties and accurate geometry.

Techniques for detecting endpoints during semiconductor dry-etching processes are described. The dry-etching process of the present invention involves using a combination of a reactive material and a charged particle beam, such as an electron beam. In another embodiment, a photon beam is used to facilitate the etching process. The endpoint detection techniques involve monitoring the emission levels of secondary electrons and backscatter electrons together with the current within the sample. Depending upon the weight given to each of these parameters, an endpoint is identified when the values of these parameters change more than a certain percentage, relative to an initial value for these values.

In order to allow detecting backscattered electrons (BSEs) generated from the bottom of a hole for determining whether a hole with a super high aspect ratio is opened or for inspecting and measuring the ratio of the top diameter to the bottom diameter of a hole, which are typified in 3D-NAND processes of opening a hole, a primary electron beam accelerated at a high accelerating voltage is applied to a sample. Backscattered electrons (BSEs) at a low angle (e.g. a zenith angle of five degrees or more) are detected. Thus, the bottom of a hole is observed using “penetrating BSEs” having been emitted from the bottom of the hole and penetrated the side wall. Using the characteristics in which a penetrating distance is relatively prolonged through a deep hole and the amount of penetrating BSEs is decreased to cause a dark image, a calibration curve expressing the relationship between a hole depth and the brightness is given to measure the hole depth.

A method and system for determining the mineral content of a sample using an electron microscope. The method includes directing an electron beam toward an area of interest of a sample, the area of interest comprising an unknown composition of minerals. The working distance between the backscattered electron detector of the microscope and the area of interest of the sample is determined. Compensation is made for the difference between the working distance and a predetermined working distance in which the predetermined working distance being the working distance that provides desired grayscale values for detected backscattered electrons. One way of compensating for working distance variation is to used an autofocus feature of the microscope to adjust the working distance. Backscattered electrons from the area of interest of the sample are then detected.

A material analysis method by a focused electron beam and an equipment for performing such an analysis where an electron map B is created describing the intensity of emitted back-scattered electrons at various points on a sample, and a spectral map S is created describing the intensity of emitted X-rays at points on the sample depending on the radiation energy. For selected chemical elements, X-ray maps M_i are created representing the intensity of X-rays characteristic for such elements. The X-ray maps M_i and the electron map B are converted into differential X-ray maps D_i, which are subsequently merged into a final differential X-ray map D. The final differential X-ray map D is then used to search particles. Subsequently, a cumulative X-ray spectrum X_j is calculated for each particle and subsequently the classification of particles based on the peak intensities and the intensity of back-scattered electron is performed.

A method for observing microscopic structure of stainless steel includes using alcohol, perchloric acid and so on to prepare electrolytic polishing liquid; polishing prepared test piece; using electrolytic polisher with 23v-40 voltage and 10-30deg.c electrolytic polishing liquid to carry out electrolytic polishing on test piece then washing test piece; placing electrolytic polished test piece into sample chamber of scan electronic microscope and using back scattering electronic detector to observe microstructure of test piece.

A shield assembly for an x-ray device is disclosed herein. The shield assembly includes a radiation shielding layer comprised of a first material; and a thermally conductive layer attached the radiation shielding layer. The thermally conductive layer is comprised of a second material. The shield assembly also includes an electron absorption layer attached to the radiation shielding layer. The electron absorption layer is comprised of a third material. The electron absorption layer is configured to absorb backscattered electrons.

Using, as a detector, a CCD detector having a CCD element to which a scintillator is closely fixed, a backscattered or scanning transmission image is obtained by the following method. The detector is disposed directly under an objective lens to obtain the backscattered electron image. When one point of a specimen is irradiated with an electron beam, backscattered or transmission electrons generated from the specimen collide with the scintillator to form a luminescent pattern. This pattern is detected by the CCD detector, and stored in a memory. This processing is sequentially repeated for each irradiation position to obtain all the patterns in an electron beam scanning range. Arithmetic processing is performed on each pattern to convert it into an image. Usually, image data for one pixel is calculated from one pattern. By sequentially repeating this, a backscattered or transmission electron image in the electronic beam scanning range can be obtained.

The invention provides an anti-total-dose shielding device, which comprises a first low Z layer, a high Z layer and a second low Z layer, wherein the first low Z layer is used for moderating and shielding primary electrons, the high Z layer is used for scattering electrons and absorbing secondary bremsstrahlung photons, and the second low Z layer is used for absorbing photoelectrons and back scattered electrons generated in high Z materials and restraining secondary photoelectron emission and electron back scattering generated by action of X-rays and materials. The first low Z layer is the outmost layer and close to the space outside a satellite, and the second low Z layer is the innermost layer and close to a component to be shielded. The first low Z layer and the second low Z layer are made of materials formed by elements of atomic numbers smaller than or equal to 30. The thickness of the first low Z layer ranges from 1 to 3mm, and the thickness of the second low Z layer ranges from 0.2 to 0.4mm. The high Z layer is made of materials formed by elements of atomic numbers larger than or equal to 50, and the thickness of the high Z layer ranges from 0.1 to 0.3mm.

X-ray tube aperture body with shielded vacuum wall. In one example embodiment, an aperture body for use in an x-ray tube having an anode and a cathode includes an electron shield and a vacuum wall. The electron shield is configured to intercept backscattered electrons from the anode. The vacuum wall is separated by a gap from the electron shield and is shielded from the backscattered electrons by the electron shield. The aperture body also includes an electron shield aperture defined in the electron shield and a vacuum wall aperture defined in the vacuum wall through which electrons may pass between the cathode and the anode.

The invention provides a SEM transmission electron Kikuchi diffraction apparatus and an analytical method. The apparatus comprises the following components: an electron beam irradiation unit for irradiating electron beams on a sample; an electron backscatter diffraction detector and a sample stage which are located below the electron beam irradiation unit; wherein the sample stage is configured, so that an inclination angle is formed between the sample which is carried on the sample stage and a horizontal plane; and the detector is provided with a phosphor screen which is configured for acquisition and reception of transmission electron signals which are emitted by the sample. Clear transmission electron Kikuchi diffraction patterns are obtained, in order to realize phase identification and phase proportion calculation of crystal grains of nanometer scale, analysis of nanometer scale texture and misorientation, analysis of crystal grain size and shape, analysis of crystal boundary as well as properties of sub-grain and twin crystal, etc.