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Data storage medium based on diode, cathodic conductivity and cathodic luminescence

A technology of storage medium and data storage device, which is applied in the direction of digital memory information, data recording, information storage, etc., and can solve the problems of small signal current, light spot size difference, signal-to-noise ratio, etc.

Inactive Publication Date: 2002-09-04
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0031] For example, making an ultra-high density data storage device suffers from at least one of the following disadvantages: relatively small signal current, relatively large electron beam spot size and relatively poor signal-to-noise ratio
[0035] Another disadvantage of ultra-high-density data storage devices is that such devices need to operate under at least partial, and often harsh, vacuum conditions to operate effectively

Method used

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  • Data storage medium based on diode, cathodic conductivity and cathodic luminescence
  • Data storage medium based on diode, cathodic conductivity and cathodic luminescence
  • Data storage medium based on diode, cathodic conductivity and cathodic luminescence

Examples

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no. 1 example

[0051] Using the AFM contact mode of operation, also represents the first embodiment of the tip;

[0052] Figure 3b is a view of a data storage device capable of recording a measure of cathode conductivity in accordance with one embodiment of the invention;

[0053] Figure 4a shows a side view of an embodiment according to the present invention, wherein the AFM non-contact or tapping mode of operation is used, and also shows and Figure 3a different tips;

[0054] Figure 4b represents another embodiment of the invention wherein the tip has a portion in contact with the storage medium and a portion away from the storage medium;

[0055] Figure 5 represents another embodiment of the invention wherein there are two cusps on the compliant suspension, one in contact with the storage medium and one not in contact with the storage medium;

[0056] Figure 6a represents a diode-type storage medium according to an embodiment of the present invention;

[0057] Figure 6b A f...

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Abstract

The present invention provides data storage media based on diode and cathode conductivity and cathodoluminescence. An ultra-high density data storage device comprising at least one energy communication element (120) and a storage medium (40) generally comprising at least one rectifying junction. The energy communication element (120) is generally capable of emitting energy such as, but not limited to, thermal energy, light energy, and electronic energy. The energy communication element is generally located near or in contact with the storage medium. The storage medium generally includes nanoscale storage regions (130, 140).

Description

technical field [0001] The invention relates to a data storage device capable of storing, reading and writing data in a nanometer-sized data storage area. technical background [0002] Recently, scientists have been developing another ultra-high-density memory device and a technique for operating an ultra-high-density data storage device. These devices and techniques store data bits in storage regions with dimensions on the nanoscale, which offer many advantages over conventional data storage devices. The advantages include faster access to data bits, lower cost per bit, and enabling the manufacture of smaller electronic devices. [0003] 1 illustrates the structure of an ultra-high-density data storage device according to the related art, which includes a storage medium 40 divided into a number of storage areas (shown as rectangles on the storage medium 40), each of which can store a data bits. FIG. 1 illustrates two types of memory regions, unmodified region 140, which ...

Claims

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Application Information

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IPC IPC(8): H01L27/10B82B1/00G01Q30/04G01Q60/40G11B9/00H01L27/105
CPCB82Y10/00G11B9/14G11B9/1409G11B9/1472G11B9/149Y10S977/947G11B9/10
Inventor G·A·吉布森
Owner SAMSUNG ELECTRONICS CO LTD
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